Confidential Datasheet Version 1.0 3A, High Voltage Boost Converter General Description Features The MAP7103 is a high performance switching • 4.5A, 0.1Ω, 45V Power MOSFET boost converter that provides a regulated supply • 8.6V to 15.9V Input Supply Voltage voltage for active matrix thin film transistor(TFT) • Fixed 500kHz Switching Frequency liquid crystal displays(LCDs) • Input Supply Under Voltage Lockout The MAP7103 incorporates current mode, fixed- • Programmable Soft-Start frequency, pulse width modulation(PWM) circuit with • VOUT Over Voltage Protection a build in N-MOSFET to achieve high efficiency and • Over Temperature Protection fast transient response. • Internal Current Limit The MAP7103 is available in a TDFN-10L • Thin 10-Lead TDFN Package 3x3mm2 package • RoHS Compliant and Halogen Free Application • GIP TFT-LCD Panels Ordering Information Part Number MAP7103DFRH July 2015. Revision 1.0 Top Marking MAP7103 LLLL YWXZ Ambient Temperature Range Package RoHS Status -40℃ to +85℃ 3mm x 3mm TDFN 10Lead Halogen Free 1 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter MAP7103 Confidential Datasheet Version 1.0 MAP7103– 3A, High Voltage Boost Converter Block Diagram LX VIN Soft Start Protection SS OTP EN COMP Summing Comparator Error Amplifier LX FB OVP VOUT 1.25V VDD Oscillator Clock Control and Driver Logic PGND Current Sense Slope Compensation Figure 1) Block Diagram Typical Application Circuit L1 4.7uH VIN 12V CIN 10uF X 2 D1 VOUT 16.25V LX VOUT 9 R1 120kΩ 8 C3 1uF VIN FB C2 1uF Chip Enable COUT 10uF X 3 R2 10kΩ 2 MAP7103 3 EN SS 4,5,11(Exposed Pad) COMP GND Css 33nF 10 1 R3 100kΩ C1 330pF Bill of Materials item IC L1 D1 CIN COUT C1 C2/C3 CSS R1 R2 R3 July 2015. Revision 1.0 Part Number MAP7103 RLF7030-4R7M B530C CL21A106KAFN3NE CL21A106KAFNNNE CL10B331KB8NNNC CL10A105KA8NNNC CL10B333JB8NNNC RC1608J124CS RC1608J103CS RC1608J104CS Manufacturer Magnachip TDK Diodes Samsung Samsung Samsung Samsung Samsung Samsung Samsung Samsung 2 Description 3A, 16V Step-Up Converter 4.7uH, 3.5A, 26mΩ, ±20% 30V, 5A, SMC 10uF, 25V, 2012, X5R 10uF, 25V, 2012, X5R 330pF, 50V, 1608, X5R 1uF, 25V, 1606, X5R 33nF, 50V, 1608, X5R 120kΩ, 1/10W, ±5% 10kΩ, 1/10W, ±5% 100kΩ, 1/10W, ±5% Qty. 1 1 1 2 3 1 2 1 1 1 1 MagnaChip Semiconductor Ltd. Confidential Datasheet Version 1.0 MAP7103– 3A, High Voltage Boost Converter Pin Configuration COMP 1 10 SS FB 2 9 VIN EN 3 8 VOUT GND 4 7 LX GND 5 6 LX Exposed PAD 11 3mm x 3mm Ultra thin DFN-10 (Top view) Pin Definitions Pin# 1 Name COMP 2 FB 3 4,5,11 (Exposed Pad) EN GND 6,7 LX 8 VOUT 9 VIN 10 SS Description Compensation Pin for Error Amplifier. Connect a series RC from COMP to GND. Feedback. The FB regulation voltage is 1.25V nominal. Connect an external resistive voltage divider between the step-up regulator’s output(VOUT) and GND, with the center tap connected to FB. Place the divider close to the IC and minimize the trace area to reduce noise coupling. Chip Enable. Drive EN low to turn off the Boost Ground. The Exposed Pad must be soldered to a large PCB and connected to GND for maximum power dissipation. Switch. LX is the drain of the internal MOSFET. Connect the inductor/rectifier diode junction to LX and minimize the trace area for lower EMI. Boost Converter Over Voltage Protection input. Bypass VOUT with a minimum 1uF ceramic capacitor directly to GND. Supply Input. Bypass VIN with a minimum 1uF ceramic capacitor directly to GND. Soft-Start Control. Connect a soft-start capacitor(CSS) to this pin. The soft-start capacitor is charged with a constant current of 5uA. The soft-start capacitor is discharged to ground when EN is low Absolute Maximum Ratings Parameter LX, VOUT to GND Value Unit -0.3V to 28V V VIN, EN, SS, FB to GND -0.3V to 16.5V V COMP to GND -0.3V to 6.0V V Junction Temperature Range -40 to +150 ℃ Storage Temperature Range -65 to +150 ℃ Package Thermal Resistance (JA) 65.9 ℃/W Power Dissipation (Ta=25℃) 1.517 W Human Body Model(HBM) 2 kV Machine Model(MM) 200 V Charged Device Model (CDM) 700 V Note: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Recommended Operating conditions Ambient Temperature Range -40 to +85 ℃ Junction Temperature Rnage -40 to +125 ℃ July 2015. Revision 1.0 3 MagnaChip Semiconductor Ltd. Confidential Datasheet Version 1.0 Symbol Parameter Test Conditions Min. Typ. Max. Unit General Section VIN Input Voltage Range VUVLO Under Voltage Lock Out IQ(ON) Quiescent Current 15.9 V Rising Threshold voltage 8.6 8.0 8.3 8.6 V Hysteresis 0.6 0.8 1.0 V 1.0 1.2 mA 1.0 1.5 MΩ VFB=1.3V, Not Switching REN Enable Pull down resistance TSD Thermal Shutdown Temperature (Note1) 0.5 TSD_HYS Thermal Shutdown Hysteresis (Note1) VOVP VOUT Over Voltage Threshold VOUT Rising ℃ 150 ℃ 10 18 19 20 V Oscillator fOSC Oscillator Frequency 450 500 550 kHz DMAX Maximum Duty Cycle 81 90 99 % VREF FB Regulation Voltage 1.2375 1.25 1.2625 V IFB FB Input Bias Current 100 nA Error Amplifier VFB_LINE FB Line Regulation Gm Transconductance ΔI=±2.5uA at VCOMP=1V AV Voltage Gain (Note1) FB to COMP Current Limit (Note1) 80 0.05 0.2 V 100 120 uA/V 700 V/V N-MOSFET ILIM On-Resistance (Note1) ILEAK Leakage Current VLX=24V RCS Current Sense Transresistance (Note1) RDS(ON) 4.5 A 100 250 10 0.25 mΩ uA V/A Soft-Start Charge Current 3.5 VIH Enable Logic High Voltage 1.4 VIL Enable Logic Low Voltage 5.0 6.5 uA Control Inputs 0.7 V Note1) Guaranteed by design, characterization and correlation with process controls, Not fully tested in production July 2015. Revision 1.0 4 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Electrical Characteristics VIN=VEN=12V, VOUT=16.25V, Typical values are at TA=25℃(unless otherwise noted.) Confidential Datasheet Version 1.0 Quiescent Current vs. Temperature FB Leakage Current vs. Temperature Figure 1. Quiescent Current Figure 2. Feedback leakage Current Boost Frequency vs. Temperature Boost Frequency vs. Temperature Figure 3. Boost Frequency Figure 4. Efficiency – Inductor [4.7uH] Switching Waveform [ Heavy Load ] Switching Waveform [ Light Load ] Figure 6. Output Voltage – Heavy Load(1.0A) Figure 5. Output Voltage – Light Load(0.1A) July 2015. Revision 1.0 5 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter TYPICAL CHARACTERISTICS Confidential Datasheet Version 1.0 The MAP7103 provided a regulated supply voltage for panel source driver ICs. The MAP7103 uses a constant frequency, peak current mode PWM(Pulse Width Modulation) boost regulation architecture to regulate the feedback voltage. At the beginning of each cycle, the N-channel MOSFET switch is turned on, forcing the inductor current to rise. The current at the source of the switch is internally measured and converted to a voltage by the current sense amplifier. That voltage is compared to the error voltage at COMP. The voltage at the output of the error amplifier is an amplified version of the difference between the 1.25V reference voltage and the feedback voltage voltage. When these two voltage are equal, the PWM comparator turns off the switch forcing the inductor current to the output capacitor through the external rectifier. This causes the inductor current to decrease. The peak inductor current is controlled by the voltage at COMP, which in turn is controlled by the output voltage. Thus the output voltage is regulated by the inductor current to satisfy the load. The use of current mode regulation improves transient response and control loop stability. Application Information Soft-Start Capacitor The MAP7103 provides soft-start function to minimize the inrush current at the input. This prevents faults tripping of the input voltage at startup due to input current overshoot. When powered on, a 5uA internal constant current charges an external capacitor at SS pin. As the SS capacitor is charged, the voltage at SS rises. The MAP7103 internally clamps the voltage at COMP to 700mV above the voltage at SS. The soft-start ends when the voltage at SS reaches 1.25V. This limits the inductor current at startup, forcing the input current to rise slowly to the current required to regulate the output voltage. The soft-start period is determined by the equation : tSS = CSS x V / I where CSS is the soft-start capacitor from SS to GND, V is reference voltage and I is charging current If CSS=33nF, the internal soft-start function will be turned on and period time is approximately 8ms. Setting the Output Voltage The regulated output voltage is shown as the following equation where VREF=1.25V (typ.) The recommended voltage for R2 should be at least 10kΩ Selecting the input Capacitor Lower ESR ceramic capacitor are recommended for input capacitor applications. Low ESR will reduce the Input voltage ripple caused by switching operation. A 10uF capacitor is sufficient for most applications. Selecting the Output Capacitor The output capacitor is required to maintain the DC output voltage. Low ESR capacitor are preferred to keep the output voltage ripple to a minimum. The characteristic of the output capacitor also affects the stability of the regulation control system. The output voltage ripple is shown as the following equation: where VRIPPLE is the output ripple voltage, VIN and VOUT are the DC Input and output voltages respectively, ILOAD is the load current, fSW is the switching frequency, and COUT is the capacitance of the output capacitor July 2015. Revision 1.0 6 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Operation Confidential Datasheet Version 1.0 Loop Compensation The output of the transconductance error amplifier(COMP) is used to compensate the regulation control system. The system uses two poles and one zero to stabilize the control loop. The poles are fP1 set by the output capacitor COUT and load resistance and fP2 set by the compensation capacitor C1. The zero fZ1 is set by the compensation capacitor C1 and the compensation resistor R3. For typical application, VIN=12V, VOUT=16.25V, COUT=10uFx3EA, L1=4.7uH, while the recommended value for compensation is as follows : R3 = 100kohm, C1=330pF Selecting the Inductor The inductor is required to force the higher output voltage while being driven by the input voltage. A larger value Inductor results in less ripple current that results in lower peak inductor current, reducing stress on the internal Nchannel switch. However, the larger series resistance, and/or lower saturation current. A 4.7uF Inductor is recommended for most 500kHz applications. As a general rule, the peak-to-peak ripple current range is 20% to 40% of the maximum input current. Make sure that the peak inductor current is below 75% of the current limit at The operating duty cycle to prevent loss of regulation due to the current limit. Also make sure that the inductor does not saturate under the worst-case load transient and startup conditions. Calculate the required inductance value by the equation Where ILOAD(MAX) is the maximum load current, ΔI is the peak-to-peak inductor ripple current, and η is efficiency Selecting the Diode The output rectifier diode supplies current to the inductor when the internal MOSFET is off. Schottky diodes are chosen for their low forward voltage drop and fast switching speed. The diode should be rated for a reverse voltage equal to or greater than the output voltage used. The average current rating must exceed the average output current and the peak current rating must be greater than the peak inductor current. July 2015. Revision 1.0 7 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Choose an output capacitor to satisfy the output ripple and load transient requirements of the design. A 4.7uF – 22uF ceramic capacitor is suitable for most applications Confidential Datasheet Version 1.0 MAP7103– 3A, High Voltage Boost Converter Package Dimensions July 2015. Revision 1.0 8 MagnaChip Semiconductor Ltd. Confidential Datasheet Version 1.0 Date Version 2014.08.11 0.0 Initial Release. Changes 2014.10.09 0.1 Update to Display Spec 2014.10.20 0.2 Update to Package Information 2014.11.07 0.3 VREF Accuracy : 1.5% 1.0% Enable Pull-down Resistance : 500kΩ 1MΩ 2014.11.19 0.4 Preliminary Datasheet 2014.12.19 0.5 Operating description ( Page 5 ~ 6) 2015.03.04 0.6 Operating Input Voltage Range : 15.5V(Max.) 15.9V(Max.) 2015.04.19 0.7 Absolute Maximum Ratings : FB,SS ( 6.0V) FB, SS (16.5V ) 2015.05.27 0.8 Add to graph 2015.06.16 0.9 Change Logic Threshold Voltage level(VIH & VIL) 2015.06.30 0.10 Update Package thermal Resistance 2015.07.03 1.00 Update Absolute maximum ratings(Junction Temperature) July 2015. Revision 1.0 9 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter REVISION HISTORY