DATA SHEET BC847BDW/BC848CDW SEMICONDUCTOR Dual General Purpose Transistors H NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 6 5 4 Q2 See Table Q1 1 2 3 1 2 SOT-363 /SC-88 CASE 419B STYLE1 3 MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage V CEO 65 45 30 V Collector–Base Voltage V CBO 80 50 30 V Emitter–Base Voltage V 6.0 6.0 5.0 V 100 100 100 mAdc Collector Current -Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Max PD Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA T J , T stg Unit 380 mW 250 mW 3.0 328 –55 to +150 mW/°C °C/W °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION Device Package Shipping BC846BDW BC847BDW BC847CDW BC848BDW SOT–363 SOT–363 SOT–363 SOT–363 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC848CDW SOT–363 3000 Units/Reel http://www.yeashin.com 1 REV.02 20120903 ELECTRICAL CHARACTERISTICS BC847BDW/BC848CDW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 — — 45 30 — — — — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) BC846 Series V BC847 Series BC848 Series Collector–Emitter Breakdown Voltage (I C = 10 µA, V EB = 0) V (BR)CEO V V (BR)CES BC846 Series BC847 Series BC848 Series Collector–Base Breakdown Voltage BC846 Series (I C = 10 µA) BC847 Series BC848 Series Emitter–Base Breakdown Voltage V 80 50 30 — — — — — — 80 — — 50 30 — — — — V (BR)CBO V (BR)EBO V (I E = 1.0 µA) BC846 Series 6.0 — — 6.0 5.0 — — — — Collector Cutoff Current BC847 Series BC848 Series (V CB = 30 V) I CBO — — 15 nA — — 5.0 µA BC846B, BC847B, BC848B — 150 — BC847C, BC848C — 270 — 200 420 — 290 520 — 450 800 0.25 — — — 580 — 0.7 0.9 660 0.6 — — 700 — — 770 fT 100 — — MHz C obo NF — — 4.5 pF dB — — — — 10 4.0 (V CB = 30 V, T A = 150°C) ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) h FE (I C = 2.0 mA, V CE = 5.0 V) BC846B, BC847B, BC848B BC847C, BC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V BE(sat) V BE(on) — V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) http://www.yeashin.com BC847C, BC848C 2 REV.02 20120903 DEVICE CHARACTERISTICS BC847BDW/BC848CDW TYPICAL CHARACTERISTICS 1.0 0.9 1.5 0.8 1.0 0.7 V,VOLTAGE (VOLTS) h FE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.5 0.4 0.3 0.2 0.3 0.1 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 200 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 2.0 1.6 1.2 0.8 0.4 0 0.02 0.2 0.3 Figure 1. Normalized DC Current Gain θ vb, TEMPERATURE COEFFICIENT (mV/ ° C) 0.2 V CE, COLLECTOR-EMITTER VOLTAGE(V) 0.6 0.1 1.0 10 20 1.0 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient http://www.yeashin.com 3 REV.02 20120903 DEVICE CHARACTERISTICS BC847BDW/BC848CDW 10 C,CAPACITANCE(pF) 7.0 5.0 3.0 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 3.0 5.0 7.0 10 20 30 50 0.8 2.0 1.0 0.5 0.6 0.4 0.2 0.2 0.1 0.2 1.0 10 0 0.2 100 0.5 2.0 1.6 1.2 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 2.0 5.0 10 20 50 100 200 100 200 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region http://www.yeashin.com 1.0 I C , COLLECTOR CURRENT (mA) Figure 8. “On” Voltage θ VB , TEMPERATURE COEFFICIENT (mV/ ° C) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE(VOLTS) 2.0 I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product 1.0 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS Figure 10. Base–Emitter Temperature Coefficient 4 REV.02 20120903 DEVICE CHARACTERISTICS BC847BDW/BC848CDW 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P (pk) t1 0.01 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M t, TIME (ms) Figure 11. Thermal Response I C , COLLECTOR CURRENT (mA) -200 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area http://www.yeashin.com 5 REV.02 20120903 PACKAGE OUTLINE & DIMENSIONS BC847BDW/BC848CDW SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 1 K H 2. BASE 1 3. COLLECTOR 2 4.EMITTER 2 5. BASE 2 6.COLLECTOR 1 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm http://www.yeashin.com 6 REV.02 20120903