ATMEL AT28C010E-20EM/883 1-megabit (128k x 8) paged parallel eeprom Datasheet

Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
•
•
•
•
•
•
•
•
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
Low Power Dissipation
– 80 mA Active Current
– 300 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
(continued)
Pin Configuration
32 LCC
Top View
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
CERDIP, FLATPACK
Top View
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
7
8
9
10
11
12
13
14
15
16
17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A15
A16
NC
NC
NC
NC
VCC
WE
NC
NC
A14
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
6
5
4
3
2
1
44
43
42
41
40
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
39
38
37
36
35
34
33
32
31
30
29
18
19
20
21
22
23
24
25
26
27
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0
I/O0
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
44 LCC
Top View
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4
3
2
1
32
31
30
A12
A15
A16
NC
VCC
WE
NC
Pin Name
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
PGA
Top View
0010D–PEEPR–7/09
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with
power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is
less than 300 μA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for
external components. The device contains a 128-byte page register to allow writing of up to 128bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation of a write
cycle, the device will automatically write the latched data using an internal control timer. The end
of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has
been detected a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device
utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent
writes. The device also includes an extra 128-bytes of EEPROM for device identification or
tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
2
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
Device Operation
READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is
high, the data stored at the memory location determined by the address pins is asserted on the
outputs. The outputs are put in the high impedance state when either CE or OE is high. This
dual-line control gives designers flexibility in preventing bus contention in their system.
BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high
initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs
last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started
it will automatically time itself to completion. Once a programming operation has been initiated
and for the duration of tWC, a read operation will effectively be a polling operation.
PAGE WRITE: The page write operation of the AT28C010 allows 1 to 128-bytes of data to be
written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 127
additional bytes. Each successive byte must be written within 150 μs (tBLC) of the previous byte.
If the tBLC limit is exceeded the AT28C010 will cease accepting data and commence the internal
programming operation. All bytes during a page write operation must reside on the same page
as defined by the state of the A7 - A16 inputs. For each WE high to low transition during the
page write operation, A7 - A16 must be the same.
The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes
may be loaded in any order and may be altered within the same load period. Only bytes which
are specified for writing will be written; unnecessary cycling of other bytes within the page does
not occur.
DATA POLLING: The AT28C010 features DATA Polling to indicate the end of a write cycle.
During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed,
true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at
anytime during the write cycle.
TOGGLE BIT: In addition to DATA Polling the AT28C010 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from
the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6
will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during
the write cycle.
DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel has incorporated both hardware and software features that will protect the memory against inadvertent writes.
HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the
AT28C010 in the following ways: (a) VCC sense - if VCC is below 3.8V (typical) the write function
is inhibited; (b) VCC power-on delay - once VCC has reached 3.8V the device will automatically
time out 5 ms (typical) before allowing a write: (c) write inhibit - holding any one of OE low, CE
high or WE high inhibits write cycles; (d) noise filter - pulses of less than 15 ns (typical) on the
WE or CE inputs will not initiate a write cycle.
SOFTWARE DATA PROTECTION: A software controlled data protection feature has been
implemented on the AT28C010. When enabled, the software data protection (SDP), will prevent
inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C010 is
shipped from Atmel with SDP disabled.
SDP is enabled by the host system issuing a series of three write commands; three specific
bytes of data are written to three specific addresses (refer to Software Data Protection Algorithm). After writing the 3-byte command sequence and after tWC the entire AT28C010 will be
protected against inadvertent write operations. It should be noted, that once protected the host
may still perform a byte or page write to the AT28C010. This is done by preceding the data to be
written by the same 3-byte command sequence used to enable SDP.
3
0010D–PEEPR–7/09
Once set, SDP will remain active unless the disable command sequence is issued. Power transitions do not disable SDP and SDP will protect the AT28C010 during power-up and power-down
conditions. All command sequences must conform to the page write timing specifications. The
data in the enable and disable command sequences is not written to the device and the memory
addresses used in the sequence may be written with data in either a byte or page write operation.
After setting SDP, any attempt to write to the device without the 3-byte command sequence will
start the internal write timers. No data will be written to the device; however, for the duration of
tWC, read operations will effectively be polling operations.
DEVICE IDENTIFICATION: An extra 128-bytes of EEPROM memory are available to the user
for device identification. By raising A9 to 12V ± 0.5V and using address locations 1FF80H to
1FFFFH the bytes may be written to or read from in the same manner as the regular memory
array.
OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6-byte software
code. Please see Software Chip Erase application note for details.
DC and AC Operating Range
AT28C010-12
AT28C010-15
AT28C010-20
AT28C010-25
-55°C - 125°C
-55°C - 125°C
-55°C - 125°C
-55°C - 125°C
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
Write (2)
VIL
VIH
VIL
DIN
X
High Z
Operating
Temperature (Case)
Mil.
VCC Power Supply
Operating Modes
Standby/Write Inhibit
(1)
VIH
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
VIH
X
Output Disable
Notes:
X
1. X can be VIL or VIH.
High Z
2. Refer to AC Programming Waveforms
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC + 1V
10
μA
Output Leakage Current
VI/O = 0V to VCC
10
μA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1V
300
μA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC + 1V
3
mA
ICC
VCC Active Current
f = 5 MHz; IOUT = 0 mA
80
mA
VIL
Input Low Voltage
0.8
V
4
Min
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
DC Characteristics (Continued)
Symbol
Parameter
Condition
Min
Max
Units
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
VOH1
Output High Voltage
IOH = -400 μA
2.4
V
VOH2
Output High Voltage CMOS
IOH = -100 μA; VCC = 4.5V
4,2
V
2.0
V
0.45
V
AC Read Characteristics
Symbol
Parameter
tACC
AT28C010-12
AT28C010-15
AT28C010-20
AT28C010-25
Min
Min
Min
Min
Max
Max
Max
Max
Units
Address to Output Delay
120
150
200
250
ns
tCE
(1)
CE to Output Delay
120
150
200
250
ns
tOE
(2)
OE to Output Delay
0
50
0
55
0
55
0
55
ns
tDF (3, 4)
CE or OE to Output Float
0
50
0
55
0
55
0
55
ns
tOH
Output Hold from OE, CE or
Address, whichever occurred
first
0
0
0
0
ns
tCEPH(5)
CE Pulse High Time
50
50
50
50
ns
AC Read Waveforms(1)(2)(3)(4)
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC
- tOE after an address change without impact in tACC.
3. tDF is specified from OE or CE wichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
5. If CE is de-asserted, it must remain de-asserted for at least 50ns during read operations otherwise incorrect data may be read.
5
0010D–PEEPR–7/09
Input Test Waveforms and
Measurement Level
Output Test Load
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
10
pF
VIN = 0V
COUT
8
Note:
12
pF
1. This parameter is 100% characterized and is not 100% tested.
VOUT = 0V
AC Write Characteristics
Symbol
Parameter
tWC
Write Cycle Time
tAS
Address Set-up Time
0
ns
tAH
Address Hold Time
50
ns
tDS
Data Set-up Time
50
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
100
ns
tBLC
Byte Load Cycle Time
tWPH
Write Pulse Width High
6
Min
Max
Units
10
ms
150
50
μs
ns
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
AC Write Waveforms
WE Controlled
CE Controlled
Page Mode Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Set-up Time
0
ns
tAH
Address Hold Time
50
ns
tCS
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
100
ns
tDS
Data Set-up Time
50
ns
tDH, tOEH
Data, OE Hold Time
0
ns
7
0010D–PEEPR–7/09
Page Mode Write Waveforms (1)(2)
Notes:
8
1.
A7 through A16 must specify the page address during each high to low transition of WE (or
CE).
2.
OE must be high only when WE and CE are both low.
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
Chip Erase Waveforms
min.)
sec (min.)
0.5V
Software Data
Protection Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
WRITES ENABLED(2)
LOAD DATA XX
TO
ANY ADDRESS(4)
LOAD LAST BYTE
TO
LAST ADDRESS
Notes:
ENTER DATA
PROTECT STATE
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Write Protect state will be activated at end of write even if no other data is loaded.
3. Write Protect state will be deactivated at end of write period even if no other data if loaded.
4. 1 to 128 bytes of data are loaded.
9
0010D–PEEPR–7/09
Software Data
Protection Disable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 20
TO
ADDRESS 5555
EXIT DATA
PROTECT STATE(3)
LOAD DATA XX
TO
ANY ADDRESS(4)
LOAD LAST BYTE
TO
LAST ADDRESS
Software Protected Program Cycle Waveform(1)(2)(3)
Notes:
1. A0 - A14 must conform to the addressing sequence for the first 3 bytes as shown above.
2. After the command sequence has been issued and a page write operation follows, the page
address inputs (A7 - A16) must be the same for each high to low transition of WE (or CE).
3. OE must be high only when WE and CE are both low.
10
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
Data Polling Characterstics(1)
Symbol
Parameter
Min
Typ
Max
Units
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay (2)
tWR
Write Recovery Time
Notes:
ns
0
1. These parameters are characterized and not 100% tested.
ns
2. See AC Read Characteristics.
Data Polling Waveforms
Toggle Bit Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
tOEH
OE Hold Time
Typ
OE to Output Delay
tOEHP
OE High Pulse
tWR
Write Recovery Time
Notes:
Units
10
ns
10
ns
(2)
tOE
Max
ns
150
0
1. These parameters are characterized and not 100% tested.
ns
ns
2. See AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
3. Any addres location may be used but the address should not vary.
11
0010D–PEEPR–7/09
AT28C010 Ordering Information(1)
ICC (mA)
tACC
(ns)
Active
Standby
120
80
150
Ordering Code
Package
0.3
AT28C010(E)-12DM/883
AT28C010(E)-12EM/883
AT28C010-12FM/883
AT28C010(E)-12LM/883
AT28C010(E)-12UM/883
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
80
0.3
AT28C010(E)-15DM/883
AT28C010(E)-15EM/883
AT28C010-15FM/883
AT28C010(E)-15LM/883
AT28C010(E)-15UM/883
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
200
80
0.3
AT28C010(E)-20DM/883
AT28C010(E)-20EM/883
AT28C010-20FM/883
AT28C010(E)-20LM/883
AT28C010(E)-20UM/883
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
250
80
0.3
AT28C010(E)-25DM/883
AT28C010(E)-25EM/883
AT28C010-25FM/883
AT28C010(E)-25LM/883
AT28C010(E)-25UM/883
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
Note:
Operation Range
1. See Valid Part Number table below.
Package Type
32D6
32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
32F
32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
32L
32-Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC)
44L
44-Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC)
30U
30-Pin, Ceramic Pin Grid Array (PGA)
W
Die
Options
Blank
E
12
Standard Device: Endurance = 10K Write Cycles; Write Time = 10 ms
High Endurance Option: Endurance = 100K Write Cycles
AT28C010 Military
0010D–PEEPR–7/09
AT28C010 Military
5962-38267 Ordering Information(1)
ICC (mA)
tACC
(ns)
Active
Standby
120
80
150
Ordering Code
Package
0.3
5962-38267 07 MXX
5962-38267 07 MZX
5962-38267 07 MYX
5962-38267 07 MTX
32D6
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
80
0.3
5962-38267 05 MXX
5962-38267 05 MUX
5962-38267 05 MZX
5962-38267 05 MYX
5962-38267 05 MTX
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
200
80
0.3
5962-38267 03 MXX
5962-38267 03 MUX
5962-38267 03 MZX
5962-38267 03 MYX
5962-38267 03 MTX
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
250
80
0.3
5962-38267 01 MXX
5962-38267 01 MUX
5962-38267 01 MZX
5962-38267 01 MYX
5962-38267 01 MTX
32D6
32L
32F
44L
30U
Military/883C
Class B, Fully Compliant
(-55°C to 125°C)
Note:
Operation Range
1. See Valid Part Number table below.
Package Type
32D6
32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
32F
32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
32L
32-Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC)
44L
44-Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC)
30U
30-Pin, Ceramic Pin Grid Array (PGA)
W
Die
Options
Blank
E
Standard Device: Endurance = 10K Write Cycles; Write Time = 10 ms
High Endurance Option: Endurance = 100K Write Cycles
Valid Part Numbers
0010D–PEEPR–7/09
13
Packaging Information
32D6, 32-Lead, 0.600" Wide, Non-Windowed,
Ceramic Dual inline Package (Cerdip)
Dimensions in Inches and (Millimeters)
32F, 32-Lead, Non-Windowed, Ceramic Bottom
Brazed Flat Package (Flatpack)
Dimensions in Inches and (Millimeters)
MIL-STD-1835 D-16 CONFIG A
MIL-STD-1835 F-18 CONFIG B
42.70(1.68)
41.70(1.64)
PIN #1 ID
9.40(0.370)
6.86(0.270)
PIN
1
15.50(0.610)
13.00(0.510)
0.51(0.020)
0.38(0.015)
21.08(0.830)
20.60(0.811)
1.27(0.050) BSC
2.49(0.098)MAX
38.10(1.500) REF
5.72(0.225)
MAX
0.127(0.005)MIN
SEATING
PLANE
1.52(0.060)
0.38(0.015)
0.58(0.023)
0.36(0.014)
5.08(0.200)
3.18(0.125)
1.65(0.065)
1.14(0.045)
2.54(0.100)BSC
1.14(0.045) MAX
12.40(0.488)
11.99(0.472)
3.05(0.120)
2.49(0.098)
0.18(0.007)
0.10(0.004)
10.36(0.408)
9.02(0.355)
15.70(0.620)
15.00(0.590)
1.14(0.045)
0.66(0.026)
1.83(0.072)
0.76(0.030)
0º~ 15º REF
0.381(0.015)
0.203(0.008)
17.80(0.700) MAX
MIL-STD-1835 C-12
JEDEC OUTLINE MO-115
32L, 32-Pad, Non-Windowed, Ceramic Leadless
Chip Carrier (LCC)
Dimensions in Inches and (Millimeters)*
44L, 44-Pad, Non-Windowed, Ceramic Leadless
Chip Carrier (LCC)
Dimensions in Inches and (Millimeters)*
16.81(0.662)
16.26(0.640)
11.63(0.458)
11.23(0.442)
2.74(0.108)
2.16(0.085)
2.54(0.100)
2.16(0.085)
16.81(0.662)
16.26(0.640)
14.22(0.560)
13.72(0.540)
1.91(0.075)
1.40(0.055)
PIN 1
2.41(0.095)
1.91(0.075)
1.40(0.055)
1.14(0.045)
PIN 1
INDEX CORNER
2.41(0.095)
1.91(0.075)
1.40(0.055)
1.14(0.045)
0.635(0.025)
X 45°
0.381(0.015)
0.305(0.012)
RADIUS
0.178(0.007)
12.70(0.500) BSC
0.737(0.029)
0.533(0.021)
1.27(0.050) TYP
1.02(0.040) X 45°
7.62(0.300) BSC
2.16(0.085)
1.65(0.065)
*Controlling dimension: millimeters
14
INDEX CORNER
0.635(0.025)
X 45°
0.381(0.015)
0.305(0.012)
RADIUS
0.178(0.007)
10.16(0.400) BSC
2.03(0.080)
1.40(0.055)
0.737(0.029)
0.533(0.021)
1.27(0.050) TYP
1.02(0.040) X 45°
12.70(0.500) BSC
2.16(0.085)
1.65(0.065)
*Controlling dimension: millimeters
AT28C010 Mil
0010D–PEEPR–7/09
AT28C010 Mil
Packaging Information
30U, 30-Pin, Ceramic Pin Grid Array (PGA)
Dimensions in Inches and (Millimeters)
7.26(0.286)
6.50(0.256)
13.74(0.541)
13.36(0.526)
2.57(0.101)
2.06(0.081)
16.18(0.637)
15.82(0.623)
1.40(0.055)
1.14(0.045)
0.58(0.023)
0.43(0.017)
3.12(0.123)
2.62(0.103)
1.83(0.072)
1.57(0.062)
14.17(0.558)
13.77(0.542)
2.54(0.100) TYP
16.71(0.658)
16.31(0.642)
12.70(0.500) TYP
2.54(0.100) TYP
10.41(0.410)
9.91(0.390)
15
0010D–PEEPR–7/09
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0010D–PEEPR–7/09
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