CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8Ω 2.6A 10V CEB02N9 900V 6.8Ω 2.6A 10V CEF02N9 900V 6.8Ω 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range TJ,Tstg TO-220F 900 V ±30 2.6 Units V 1.9 2.6 1.9 d 10.4 10.4 d d A A A 125 47 W 0.83 0.3 W/ C -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 1.2 3.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.May http://www.cetsemi.com Electrical Characteristics Parameter CEP02N9/CEB02N9 CEF02N9 Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 900 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 900V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 6.8 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 1.3A 2 5.3 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 690 pF 70 pF 15 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 450V, ID = 2.2A, VGS = 10V, RGEN = 25Ω 20 40 ns 34 68 88 ns 44 ns Turn-Off Fall Time tf 28 56 ns Total Gate Charge Qg 16 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 720V, ID = 2.2A, VGS = 10V 3 nC 7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . 2 2 A 1.2 V CEP02N9/CEB02N9 CEF02N9 4.2 2.0 VGS=10,9,8,6V ID, Drain Current (A) ID, Drain Current (A) 2.4 1.6 1.2 0.8 VGS=5V 0.4 0 0 2 4 6 8 10 TJ=125C 0 2 -55 C 4 6 8 10 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 5 10 15 20 25 3.0 2.5 ID=1.3A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 0.7 VGS, Gate-to-Source Voltage (V) Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.4 12 600 1.2 2.1 VDS, Drain-to-Source Voltage (V) 750 1.3 2.8 0 900 0 3.5 -25 0 25 50 75 100 125 10 1 10 0 10 -1 VGS=0V 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=720V ID=2.2A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP02N9/CEB02N9 CEF02N9 6 4 2 0 0 4 8 12 10 RDS(ON)Limit 100ms 1ms 0 10ms DC 10 10 16 1 -1 TC=25 C TJ=175 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3