MT160C18T2 Thyristor Modules VRRM / VDRM 800 to 1800V ITAV 160A Applications y y y y Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL recognized applied for file no. E360040 Module Type TYPE VRRM VRSM MT160C08T2 MT160C12T2 MT160C16T2 MT160C18T2 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Values Units ITAV o Sine 180 ;Tc=85℃ 160 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 5400 5000 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 145000 125000 A2s Visol Tvj a.c.50HZ;r.m.s.;1min 3000 -40 to 130 Tstg -40 to 125 Mt To terminals(M6) Ms To heatsink(M6) di/dt V ℃ ℃ Nm 3±15% 5±15% Nm TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 165 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.17/0.085 ℃/W Rth(c-s) per thyristor / per module 0.1/0.05 ℃/W Thermal Characteristics Document Number: S-M0039 Rev.1.0, May.31, 2013 www.apt-semi.com 1 MT160C18T2 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25℃ ITM =500A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.7 V 40 mA For power-loss calculations only (TVJ =125℃) TVJ =TVJM 0.85 V rT 1.5 mΩ VGT TVJ =25℃ , VD =6V 3 V IGT VGD TVJ =25℃ , VD =6V TVJ =125℃ , VD =2/3VDRM 150 0.25 mA V IGD TVJ =125℃ , VD =2/3VDRM IL TVJ =25℃ , RG = 33 Ω TVJ =25℃ , VD =6V IRRM/IDRM VTO IH tgd tq Document Number: S-M0039 Rev.1.0, May.31, 2013 Min. TVJ =25℃, IG=1A, diG/dt=1A/us TVJ =TVJM Max. Units 10 mA 300 1000 mA 150 400 1 mA us 100 us www.apt-semi.com 2 MT160C18T2 Performance Curves 300 300 A W rec.120 200 DC 240 sin.180 DC rec.60 180 sin.180 rec.30 rec.120 120 100 rec.60 rec.30 60 PTAV 0 ITAVM 0 ITAV 50 100 150 0 A 200 0 Tc Fig1. Power dissipation 50 100 ℃ 130 Fig2.Forward Current Derating Curve 0.30 6000 Zth(j-S) ℃/ W 50HZ A Zth(j-C) 0.1 3000 0 0.001 t 0.01 0.1 1 10 0 S 100 Fig3. Transient thermal impedance 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 600 A 10 Typ. 400 max. 200 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: S-M0039 Rev.1.0, May.31, 2013 www.apt-semi.com 3 MT160C18T2 100 1/2·MT160C18T2 V 20V;20Ω 10 VGT ∧ 1 PG(tp) -40℃ Tvj 25℃ 125℃ VGD125℃ VG IGT IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T2 Dimensions in mm Document Number: S-M0039 Rev.1.0, May.31, 2013 www.apt-semi.com 4