TI1 LME49870 44v single high performance, high fidelity audio operational amplifier Datasheet

LME49870
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
LME49870 44V Single High Performance, High Fidelity Audio Operational Amplifier
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FEATURES
DESCRIPTION
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The LME49870 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49870 audio operational
amplifier delivers superior audio signal amplification
for outstanding audio performance. The LME49870
combines extremely low voltage noise density
(2.7nV/√Hz) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications. To ensure that the most challenging
loads are driven without compromise, the LME49870
has a high slew rate of ±20V/μs and an output current
capability of ±26mA. Further, dynamic range is
maximized by an output stage that drives 2kΩ loads
to within 1V of either power supply voltage and to
within 1.4V when driving 600Ω loads.
1
2
Easily Drives 600Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
APPLICATIONS
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High Quality Audio Amplification
High Fidelity Preamplifiers, Phono Preamps,
and Multimedia
High Performance Professional Audio
High Fidelity Equalization and Crossover
Networks with Active Filters
High Performance Line Drivers and Receivers
Low Noise Industrial Applications Including
Test, Measurement, and Ultrasound
KEY SPECIFICATIONS
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Power Supply Voltage Range: ±2.5V to ±22V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2kΩ: 0.00003% (Typ)
– RL = 600Ω: 0.00003% (Typ)
Input Noise Density: 2.7nV/√Hz (Typ)
Slew Rate: ±20V/μs (Typ)
Gain Bandwidth Product: 55MHz (Typ)
Open Loop Gain (RL = 600Ω): 140dB (Typ)
Input Bias Current: 10nA (Typ)
Input Offset Voltage: 0.1mV (Typ)
DC Gain Linearity Error: 0.000009%
The LME49870's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
The LME49870 has a wide supply range of ±2.5V to
±22V. Over this supply range the LME49870
maintains excellent common-mode rejection, power
supply rejection, and low input bias current. The
LME49870 is unity gain stable. This Audio
Operational Amplifier achieves outstanding AC
performance while driving complex loads with values
as high as 100pF.
The LME49870 is available in 8–lead narrow body
SOIC. Demonstration boards are available for each
package.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49870
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TYPICAL APPLICATION
150:
3320:
150:
3320:
26.1 k:
+
909:
-
-
LME49870
+
INPUT
LME49870
22 nF//4.7 nF//500 pF
10 pF
47 k:
+
3.83 k:
+
100:
OUTPUT
47 nF//33 nF
Note: 1% metal film resistors, 5% polypropylene capacitors
Figure 1. Passively Equalized RIAA Phono Preamplifier
CONNECTION DIAGRAM
NC
-IN
+IN
V-
NC
-
V+
+
VOUT
NC
Figure 2. Package Number — D0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Power Supply Voltage (VS = V+ - V-)
46V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (4)
Continuous
Power Dissipation
Internally Limited
ESD Rating (5)
ESD Rating (6)
2000V
Pins 1, 4, 7 and 8
200V
Pins 2, 3, 5 and 6
100V
Junction Temperature
Thermal Resistance
(1)
(2)
(3)
(4)
(5)
(6)
150°C
θJA (SO)
145°C/W
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings,
whichever is lower.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
OPERATING RATINGS
Temperature Range (TMIN ≤ TA ≤ TMAX)
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±22V
Supply Voltage Range
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ELECTRICAL CHARACTERISTICS FOR THE LME49870 (1)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
Symbol
THD+N
Parameter
Total Harmonic Distortion + Noise
Conditions
LME49870
Typical (2)
Limit (3)
AV = 1, VOUT = 3Vrms
RL = 2kΩ
RL = 600Ω
0.00003
0.00003
0.00009
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
0.00005
Units
(Limits)
% (max)
IMD
Intermodulation Distortion
GBWP
Gain Bandwidth Product
55
45
MHz (min)
SR
Slew Rate
±20
±15
V/μs (min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
10
MHz
ts
Settling time
AV = –1, 10V step, CL = 100pF
0.1% error range
1.2
μs
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.34
0.65
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
2.5
6.4
4.7
in
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
VOS
Offset Voltage
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
PSRR
Average Input Offset Voltage Shift vs
Power Supply Voltage
VS = ±18V, ΔVS = 24V
VS = ±22V, ΔVS = 30V
IB
Input Bias Current
ΔIOS/ΔTemp
IOS
en
VIN-CM
CMRR
ZIN
(1)
(2)
(3)
(4)
4
VS = ±18V
±0.12
VS = ±22V
±0.14
%
mV (max)
±0.7
110
VCM = 0V
10
72
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
0.2
Input Offset Current
VCM = 0V
11
VS = ±18V
+17.1
–16.9
VS = ±22V
+21.0
–20.8
Common-Mode Rejection
VS = ±18V, –12V≤Vcm≤12V
120
VS = ±22V, –15V≤Vcm≤15V
120
Differential Input Impedance
Common Mode Input Impedance
–10V<Vcm<10V
mV (max)
μV/°C
120
120
Common-Mode Input Voltage Range
nV/√Hz
(max)
pA/√Hz
0.1
(4)
μVRMS
(max)
dB (min)
nA (max)
nA/°C
65
nA (max)
V (min)
V (min)
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
dB (min)
110
dB (min)
30
kΩ
1000
MΩ
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are specified by test or statistical analysis.
PSRR is measured as follows: For VS, VOS is measured at two supply voltages, ±7V and ±22V, PSRR = |20log(ΔVOS/ΔVS)|.
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ELECTRICAL CHARACTERISTICS FOR THE LME49870(1) (continued)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
Symbol
AVOL
VOUTMAX
IOUT
Parameter
Open Loop Voltage Gain
Maximum Output Voltage Swing
Output Current
Conditions
LME49870
Typical (2)
VS = ±18V
–12V≤Vout≤12V
RL = 600Ω
RL = 2kΩ
RL = 10Ω
140
140
140
VS = ±22V
–15V≤Vout≤15V
RL = 600Ω
RL = 2kΩ
RL = 10Ω
140
140
140
Limit (3)
Units
(Limits)
dB
dB
dB
125
dB
dB
dB
RL = 600Ω
VS = ±18V
VS = ±22V
±16.7
±20.4
RL = 2kΩ
VS = ±18V
VS = ±22V
±17.0
±21.0
V (min)
V (min)
RL = 10kΩ
VS = ±18V
VS = ±22V
±17.1
±21.0
V (min)
V (min)
RL = 600Ω
VS = ±20V
VS = ±22V
±31
±37
±19.0
±30
V (min)
V (min)
mA (min)
mA (min)
+53
–42
IOUT-CC
Instantaneous Short Circuit Current
ROUT
Output Impedance
fIN = 10kHz
Closed-Loop
Open-Loop
CLOAD
Capacitive Load Drive Overshoot
100pF
16
IS
Total Quiescent Current
IOUT = 0mA
5
mA
Ω
0.01
13
%
6.5
mA (max)
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TYPICAL PERFORMANCE CHARACTERISTICS
0.01
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
0.01
0.005
0.005
0.002
0.002
0.001
THD+N (%)
THD+N (%)
0.001
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
0.00001
10m
10 20
OUTPUT VOLTAGE (V)
Figure 3.
Figure 4.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0002
0.0001
0.0005
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
10 20
1
100m
OUTPUT VOLTAGE (V)
THD + N (%)
THD+N (%)
0.01
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
100m
1
0.00001
100m 200m
10 20
500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.01
Figure 5.
Figure 6.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
0.01
0.005
0.005
0.002
0.002
0.001
THD+N (%)
THD+N (%)
0.001
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
10 20
0.00001
10m
Figure 7.
6
100m
1
10 20
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 8.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.01
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
0.01
0.005
0.005
0.002
0.002
0.001
THD + N (%)
THD+N (%)
0.001
0.0005
0.0002
0.0001
0.0005
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
0.00001
100m 200m
10 20
OUTPUT VOLTAGE (V)
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
0.01
0.002
0.002
0.001
0.001
0.0005
0.0002
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
100m
1
0.00001
10m
10 20
100m
OUTPUT VOLTAGE (V)
1
10 20
OUTPUT VOLTAGE (V)
Figure 11.
Figure 12.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD + N (%)
THD+N (%)
10
0.0005
0.0001
0.0005
0.0002
0.0001
0.0005
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
5
Figure 10.
0.005
0.01
2
OUTPUT VOLTAGE (V)
0.005
0.00001
10m
1
Figure 9.
THD+N (%)
THD+N (%)
0.01
500m
100m
1
10 20
0.00001
100m 200m
500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 13.
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 2kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
%
0.001
0.0005
%
0.001
0.0005
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
0.00001
20
5k 10k 20k
Hz
5k 10k 20k
Hz
Figure 15.
Figure 16.
THD+N vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 2kΩ
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.0005
%
0.001
0.0005
%
0.001
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
0.00001
20
5k 10k 20k
Hz
50 100 200 500 1k 2k
5k 10k 20k
Hz
Figure 17.
Figure 18.
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 600Ω
THD+N vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
%
0.001
0.0005
%
0.001
0.0005
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
0.00001
20
Hz
50 100 200 500 1k 2k
5k 10k 20k
Hz
Figure 19.
8
50 100 200 500 1k 2k
Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 10kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.002
%
0.001
0.0005
%
0.001
0.0005
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
0.00001
20
Hz
5k 10k 20k
Hz
Figure 21.
Figure 22.
THD+N vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 10kΩ
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.0005
0.0005
%
IMD (%)
0.001
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
20
50 100 200 500 1k 2k
5k 10k 20k
0.00001
0.000007
100m 200m 500m 1
0.01
2
5
Figure 23.
Figure 24.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
0.01
0.005
0.005
0.002
0.002
0.001
0.0005
IMD (%)
0.001
0.0005
0.0002
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.000007
100m 200m 500m 1
10
OUTPUT VOLTAGE (V)
Hz
IMD (%)
50 100 200 500 1k 2k
2
5
10
0.00001
0.000007
100m 200m 500m 1
OUTPUT VOLTAGE (V)
2
5
10
OUTPUT VOLTAGE (V)
Figure 25.
Figure 26.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.01
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
IMD (%)
IMD (%)
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m 200m 500m 1
2
5
0.00001
0.000006
100m 200m 500m 1
10
Figure 28.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.00005
0.00002
0.00002
0.00001
0.000006
100m 200m 500m 1
2
5
0.00001
0.000007
100m 200m 500m 1
10
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 29.
Figure 30.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
IMD (%)
IMD (%)
10
0.0001
0.00005
0.01
5
Figure 27.
IMD (%)
IMD (%)
0.01
2
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
300m
500m 700m
1
0.00001
0.000006
100m 200m 500m 1
Figure 31.
10
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 32.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
0.01
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
IMD (%)
IMD (%)
0.01
0.005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.000006
100m 200m 500m 1
2
5
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
0.00001
0.000006
100m 200m 500m 1
10
OUTPUT VOLTAGE (V)
2
5
10
OUTPUT VOLTAGE (V)
Figure 33.
Figure 34.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
Voltage Noise Density vs Frequency
100
100
0.01
VS = 30V
0.005
VOLTAGE NOISE (nV/Hz)
VCM = 15V
0.002
IMD (%)
0.001
0.0005
0.0002
0.0001
0.00005
10
10
2.7 nV/Hz
0.00002
1
0.00001
100m
300m
500m 700m
1
1
10
100
1000
1
10000 100000
FREQUENCY (Hz)
OUTPUT VOLTAGE (V)
Figure 35.
Figure 36.
Current Noise Density vs Frequency
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
0
100
100
VS = 30V
10
10
1
1
10
100
1000
1.6 pA/Hz
1
10000 100000
PSRR (dB)
CURRENT NOISE (pA/Hz)
VCM = 15V
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
FREQUENCY (Hz)
100
1k
10k
100k 200k
FREQUENCY (Hz)
Figure 37.
Figure 38.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
PSRR (dB)
PSRR (dB)
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
Figure 40.
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
1k
10k
100k 200k
FREQUENCY (Hz)
Figure 41.
Figure 42.
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (DB)
FREQUENCY (Hz)
100
1k
10k
100k 200k
-110
-120
-130
-140
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (HZ)
Figure 43.
12
100k 200k
Figure 39.
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
-110
-120
-130
-140
20
1k
Figure 44.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
PSRR (dB)
PSRR (dB)
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
Figure 46.
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
1k
10k
100k 200k
FREQUENCY (Hz)
Figure 47.
Figure 48.
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
FREQUENCY (Hz)
-110
-120
-130
-140
20
100k 200k
Figure 45.
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
10k
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
FREQUENCY (Hz)
1k
100
1k
10k
100k 200k
-110
-120
-130
-140
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 49.
Figure 50.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 600Ω, VRIPPLE = 200mVpp
-110
-120
-130
-140
20
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
100k 200k
-110
-120
-130
-140
20
100
10k
100k 200k
Figure 53.
Figure 54.
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
-110
-120
-130
-140
100
1k
10k
100k 200k
-110
-120
-130
-140
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 55.
14
100k 200k
Figure 52.
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
20
10k
Figure 51.
PSRR (dB)
PSRR (dB)
FREQUENCY (Hz)
-110
-120
-130
-140
20
1k
FREQUENCY (Hz)
Figure 56.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
PSRR (dB)
PSRR (dB)
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
100
1k
-110
-120
-130
-140
20
100k 200k
10k
100
Figure 58.
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
10k
100k 200k
Figure 59.
Figure 60.
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
-110
-120
-130
-140
20
100k 200k
Figure 57.
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
10k
FREQUENCY (Hz)
PSRR (dB)
PSRR (dB)
FREQUENCY (Hz)
1k
100
1k
10k
100k 200k
-110
-120
-130
-140
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 61.
Figure 62.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
20
PSRR (dB)
PSRR (dB)
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
1k
Figure 64.
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
PSRR (dB)
PSRR (dB)
Figure 63.
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
-110
-120
-130
-140
20
100k 200k
100
1k
Figure 66.
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-20
-40
CMRR (dB)
PSRR (dB)
100k 200k
Figure 65.
0
-60
-80
-100
100
1k
10k
100k 200k
-120
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 67.
16
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
-110
-120
-130
-140
20
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
-110
-120
-130
-140
20
10k
Figure 68.
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0
-20
-20
-40
-40
CMRR (dB)
0
-60
-60
-80
-80
-100
-100
-120
10
CMRR (dB)
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ
100
1k
10k
-120
10
100k 200k
100k 200k
Figure 70.
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω
-20
-20
-40
-40
-60
-60
-80
-80
-100
-100
100
1k
10k
-120
10
100k 200k
100
FREQUENCY (Hz)
1k
10k
FREQUENCY (Hz)
100k 200k
Figure 71.
Figure 72.
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω
0
0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
10k
Figure 69.
0
-60
-60
-80
-80
-100
-100
-120
10
1k
FREQUENCY (Hz)
0
-120
10
100
FREQUENCY (Hz)
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ
100
1k
10k
100k 200k
-120
10
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 73.
Figure 74.
100k 200k
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ
0
0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
-60
-60
-80
-80
-100
-100
-120
10
100
1k
10k
-120
10
100k 200k
100
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ
0
-20
-20
-40
-40
-60
-80
-100
-100
100
1k
10k
100k 200k
-120
10
1k
10k
100k 200k
FREQUENCY (Hz)
Figure 77.
Figure 78.
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
Output Voltage vs Load Resistance
VCC = 15V, VEE = –15V
THD+N = 1%
0
11.5
-20
11.0
OUTPUT (Vrms)
-60
-80
10.5
10.0
9.5
-100
100
1k
10k
100k 200k
9.0
500
600
800
2k
5k
10k
LOAD RESISTANCE (:)
FREQUENCY (Hz)
Figure 79.
18
100
FREQUENCY (Hz)
-40
CMRR (dB)
-60
-80
-120
10
100k 200k
Figure 76.
0
-120
10
1k
10k
FREQUENCY (Hz)
Figure 75.
CMRR (dB)
CMRR (dB)
FREQUENCY (Hz)
Figure 80.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Load Resistance
VCC = 12V, VEE = –12V
THD+N = 1%
Output Voltage vs Load Resistance
VCC = 22V, VEE = –22V
THD+N = 1%
9.5
13.5
13.0
9.0
OUTPUT (Vrms)
OUTPUT (Vrms)
12.5
8.5
8.0
12.0
11.5
11.0
7.5
10.5
7.0
500
600
800
2k
5k
10k
LOAD RESISTANCE (:)
10.0
500
600
800
2k
5k
10k
LOAD RESISTANCE (:)
Figure 81.
Figure 82.
Output Voltage vs Load Resistance
VCC = 2.5V, VEE = –2.5V
THD+N = 1%
Output Voltage vs
Total Power Supply Voltage
RL = 2kΩ, THD+N = 1%
1.25
OUTPUT (Vrms)
1.00
0.75
0.25
0.50
0.00
500
600
800
2k
5k
10k
LOAD RESISTANCE (:)
Figure 83.
Figure 84.
Output Voltage vs
Total Power Supply Voltage
RL = 600Ω, THD+N = 1%
Output Voltage vs
Total Power Supply Voltage
RL = 10kΩ, THD+N = 1%
Figure 85.
Figure 86.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Power Supply Current vs
Total Power Supply Voltage
RL = 2kΩ
5.0
POWER SUPPLY CURRENT (mA)
POWER SUPPLY CURRENT (mA)
5.0
4.8
4.6
4.4
4.2
4.0
3.8
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.6
5
10
15 20
25
30
35
40
45
50
5
TOTAL POWER SUPPLY VOLTAGE (V)
5.0
10
15 20
25
30
35
40
45
50
TOTAL POWER SUPPLY VOLTAGE (V)
Figure 87.
Figure 88.
Power Supply Current vs
Total Power Supply Voltage
RL = 10kΩ
Full Power Bandwidth vs
Frequency
VS = ±18V, RL = 2kΩ
2
0
4.8
-2
4.6
MAGNITUDE (dB)
POWER SUPPLY CURRENT (mA)
Power Supply Current vs
Total Power Supply Voltage
RL = 600Ω
4.4
4.2
4.0
0 dB = 1 VP-P
-4
-6
-8
-10
-12
-14
3.8
-16
-18
3.6
5
10
15 20
25
30
35
40
45
50
1
10
100
1k
10k 100k 1M 10M 100M
FREQUENCY (Hz)
TOTAL POWER SUPPLY VOLTAGE (V)
Figure 89.
Figure 90.
Gain Phase vs Frequency
VS = ±18V, RL = 2kΩ
180
o
GAIN (dB), PHASE LAG ( )
160
140
120
100
80
60
40
20
0
-20
10
10000000
100000
1000000 100000000
10000
FREQUENCY (Hz)
1000
100
Figure 91.
20
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Small-Signal Transient Response
AV = 1, CL = 10pF
Small-Signal Transient Response
AV = 1, CL = 100pF
': 0.00s
': 0.00s
': 0.00V
@: -1.01 Ps @: -80.0 mV
1
': 0.00V
@: -1.01 Ps @: -80.0 mV
1
Ch1 50.0 mV
M 200 ns A Ch1
50.40%
2.00 mV
Figure 92.
Ch1 50.0 mV
M 200 ns A Ch1
50.40%
2.00 mV
Figure 93.
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APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49870 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49870’s low residual distortion is an input referred internal error. As shown in Figure 94, adding the 10Ω
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the
value of R1 low as shown in Figure 94.
This technique is verified by duplicating the measurements with high closed loop gain and/or making the
measurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described
circuit connected to an Audio Precision System Two Cascade.
R2
1000:
LME49870
R1
10:
Distortion Signal Gain = 1+(R2/R1)
+
Analyzer Input
Generator Output
Audio Precision
System Two
Cascade
Actual Distortion = AP Value/100
Figure 94. THD+N and IMD Distortion Test Circuit
The LME49870 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
22
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Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 95. Noise Measurement Circuit - Total Gain: 115 dB @f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
Figure 96. RIAA Preamp Voltage Gain, RIAA
Deviation
vs Frequency
Figure 97. Flat Amp Voltage Gain vs Frequency
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LME49870
SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
www.ti.com
TYPICAL APPLICATIONS
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 98. NAB Preamp
Figure 99. NAB Preamp Voltage Gain vs Frequency
VO = V1 + V2 − V3 − V4
VO = V1–V2
Figure 100. Balanced to Single Ended Converter
Figure 101. Adder/Subtracter
Figure 102. Sine Wave Oscillator
24
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Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
Figure 103. Second Order High Pass Filter
(Butterworth)
Figure 104. Second Order Low Pass Filter
(Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 105. State Variable Filter
Figure 106. AC/DC Converter
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LME49870
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Figure 107. 2 Channel Panning Circuit (Pan Pot)
Figure 108. Line Driver
Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 109.
Figure 110. Tone Control
26
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 111. RIAA Preamp
Illustration is:
V0 = 101(V2 − V1)
Figure 112. Balanced Input Mic Amp
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LME49870
SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
www.ti.com
Figure 113. 10 Band Graphic Equalizer
28
fo (Hz)
C1
C2
R1
R2
32
0.12μF
4.7μF
75kΩ
500Ω
64
0.056μF
3.3μF
68kΩ
510Ω
125
0.033μF
1.5μF
62kΩ
510Ω
250
0.015μF
0.82μF
68kΩ
470Ω
500
8200pF
0.39μF
62kΩ
470Ω
1k
3900pF
0.22μF
68kΩ
470Ω
2k
2000pF
0.1μF
68kΩ
470Ω
4k
1100pF
0.056μF
62kΩ
470Ω
8k
510pF
0.022μF
68kΩ
510Ω
16k
330pF
0.012μF
51kΩ
510Ω
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
+15V
0.1 PF
1 k:
1 k:
-
INPUT
LME49870
+
200:
This application uses two op
amps in parallel for higher current
drive.
200:
To
Headphone
LME49870
+
0.1 PF
-15V
Figure 114. Headphone Amplifier
20 pF
9.76 k:
500:
BALANCE
TRIM
10 k:
-
INPUT
4.99 k:
D1
LME49870
OUTPUT
+
S1
D2
S2
4.75 k:
TTL
4.75 k:
DG188
1 k:
IN
OFFSET
TRIM
+VCC
Figure 115. High Performance Synchronous Demodulator
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LME49870
SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
www.ti.com
0.1 PF
100:
100 k:
OUTPUT
LME49870
+
Dexter 1M
Thermopile
Detector
NOTE: Use metal film resistors and plastic
film capacitor. Circuit must be well
shielded to achieve low noise.
Responsivity approx. 2.5X104V/W
Output Noise approx. 30 PVrms, 0.1 Hz to 10 Hz
Figure 116. Long-Wavelength Infrared Detector Amplifier
30
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SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013
REVISION HISTORY
Rev
Date
1.0
09/20/07
Description
Initial release.
1.1
09/27/07
Updated Notes 1–7 (per TI standard).
1.2
12/20/07
Deleted all Crosstalk vs Frequency curves.
1.3
01/14/08
Edited some graphics.
C
04/04/13
Changed layout of National Data Sheet to TI format.
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31
PACKAGE OPTION ADDENDUM
www.ti.com
16-Oct-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
LME49870MA/NOPB
LIFEBUY
Package Type Package Pins Package
Drawing
Qty
SOIC
D
8
95
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
Op Temp (°C)
Device Marking
(4/5)
-40 to 85
L49870
MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
16-Oct-2015
Addendum-Page 2
IMPORTANT NOTICE
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