PD - 97049B
IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
l
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Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free
D
VDSS = -100V
RDS(on) = 60mΩ
G
ID = -38A
S
D
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
G
D
S
G
D2Pak
IRF5210SPbF
D
S
TO-262
IRF5210LPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Max.
Units
Continuous Drain Current, VGS @ -10V
Parameter
-38
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-24
IDM
Pulsed Drain Current
Maximum Power Dissipation
-140
PD @TA = 25°C
PD @TC = 25°C
Maximum Power Dissipation
170
Linear Derating Factor
Gate-to-Source Voltage
1.3
± 20
W/°C
V
120
mJ
ID @ TC = 25°C
VGS
EAS
c
IAR
Single Pulse Avalanche Energy
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
c
3.1
d
c
Peak Diode Recovery dv/dt e
Parameter
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount, steady state)
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-23
A
17
mJ
-7.4
-55 to + 150
V/ns
°C
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
W
g
Typ.
Max.
Units
–––
0.75
40
°C/W
–––
1
08/04/09
IRF5210S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
-100
–––
–––
-2.0
9.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
4.5
–––
–––
60
-4.0
–––
-50
-250
100
-100
230
33
120
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2780
800
430
–––
–––
–––
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Conditions
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mΩ VGS = 10V, ID = -38A
V VDS = VGS, ID = -250µA
S VDS = -50V, ID = -23A
µA VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
nC ID = -23A
VDS = -80V
VGS = -10V
ns VDD = -50V
ID = -23A
RG = 2.4Ω
VGS = -10V
nH Between lead,
f
f
f
6mm (0.25in.)
from package
pF
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
-38
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-140
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
170
1180
-1.6
260
1770
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting TJ = 25°C, L = 0.46mH
RG = 25Ω, IAS = -23A. (See Figure 12)
ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
2
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -23A, VGS = 0V
TJ = 25°C, IF = -23A, VDD = -25V
di/dt = -100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
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IRF5210S/LPbF
1000
1000
100
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
-4.5V
1
≤60µs PULSE WIDTH
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
1
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1
T J = 25°C
100
T J = 150°C
10
1
VDS = -50V
≤60µs PULSE WIDTH
0.1
ID = -38A
VGS = -10V
1.5
1.0
0.5
2
4
6
8
10
12
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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14
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF5210S/LPbF
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= -23A
-V GS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
VDS= -80V
VDS= -50V
10.0
VDS= -20V
8.0
6.0
4.0
2.0
100
0.0
1
10
100
0
-VDS, Drain-to-Source Voltage (V)
75
100
125
150
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
50
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
T J = 150°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 25°C
10
1
100µsec
10
0.1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
10msec
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
25
1.8
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5210S/LPbF
RD
VDS
40
V GS
D.U.T.
RG
35
-
-I D, Drain Current (A)
+
VDD
30
-10V
25
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
15
10
td(on)
5
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
90%
VDS
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
τJ
0.05
R1
R1
τJ
τ1
0.02
0.01
0.01
R2
R2
τ1
τ2
τ2
Ci= τi/Ri
Ci= τi/Ri
1E-005
0.0001
Ri (°C/W)
τC
τ3
τ3
τ
τι (sec)
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R3
R3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5210S/LPbF
L
VDS
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
500
D.U.T
RG
ID
-8.7A
-14A
BOTTOM -23A
450
TOP
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-10V
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
50KΩ
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF5210S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
V GS
*
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-V
DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
VGS=10V
] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[
VDD
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[
ISD
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 15. For P-Channel HEXFETS
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7
IRF5210S/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
7+,6,6$1,5)6:,7+
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(/
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
)6
'$7(&2'(
<($5 :((.
/,1(/
25
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
)6
'$7(&2'(
3 '(6,*1$7(6/($')5((
352'8&7 237,21$/
<($5 :((.
$ $66(0%/<6,7(&2'(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF5210S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
(;$03/( 7+,6,6$1,5//
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
'$7(&2'(
<($5 :((.
/,1(&
25
,17(51$7,21$/
5(&7,),(5
/2*2
$66(0%/<
/27&2'(
3$57180%(5
'$7(&2'(
3 '(6,*1$7(6/($')5((
352'8&7 237,21$/
<($5 :((.
$ $66(0%/<6,7(&2'(
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF5210S/LPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/09
10
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