SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC638. N E K MAXIMUM RATING (Ta=25ᴱ) J SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Storage Temperature Tstg -55ᴕ150 ᴱ H 2 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M 1 C F F L CHARACTERISTIC G D DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=30V, IE=0 - - 100 nA Collector-Emitter Breakdown Voltage * V(BR)CEO IC=10mA, IB=0 60 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=100Ọ A, IE=0 60 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10Ọ A, IC=0 5.0 - - V hFE VCE=2V, IC=150mA 40 - 160 VCE(sat) IC=500mA, IB=50mA - - 0.5 V Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V Transition Frequency fT VCE=2V, IC=50mA, f=100MHz - 200 - MHz Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - 50 - pF Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.0 - pF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage * Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0% 2000. 10. 2 Revision No : 0 1/1