Diodes DMP1555UFA 12v p-channel enhancement mode mosfet Datasheet

DMP1555UFA
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON) max
ID MAX
TA = +25°C
-12V
0.8 Ω @ VGS = -4.5V
1.1 Ω @ VGS = -2.5V
3.0 Ω @ VGS = -1.8V
5.0 Ω @ VGS = -1.5V
-0.2A
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0.4mm Ultra Low Profile Package for Thin Application
0.48mm2 Package Footprint, 16 Times Smaller than SOT23
Low On-Resistance
Low Input Capacitance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications



Mechanical Data


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Load Switch
Power Management Functions
Portable Power Adaptors

Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.00043 grams (Approximate)
D
X2-DFN0806-3
G
Gate Protection
Diode
Bottom View
Top View
Package Pin Configuration
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1555UFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
55
55 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP1555UFA
Document number: DS37123 Rev. 2 - 2
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DMP1555UFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Symbol
Value
Drain-Source Voltage
VDSS
-12
Gate-Source Voltage
VGSS
±8
Unit
V
Continuous Drain Current (VGS = -4.5V)
(Note 5)
ID
-0.2
A
Pulsed Drain Current
(Note 6)
IDM
-1.5
A
Units
Thermal Characteristics
Symbol
Value
Total Power Dissipation
Characteristic
(Note 5)
PD
0.36
W
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
353
°C/W
TJ, TSTG
-55 to 150
°C
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-12
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1
μA
VDS = -10V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = ±8V, VDS = 0V
VGS(th)
-0.4
—
-1.0
V
VDS = VGS, ID = -250μA
—
0.4
0.8
—
0.55
1.1
—
0.75
3.0
—
1.0
5.0
VSD
—
—
-1.2
V
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS (ON)
VGS = -4.5V, ID = -0.2A
Ω
VGS = -2.5V, ID = -0.1A
VGS = -1.8V, ID = -0.05A
VGS = -1.5V, ID = -0.01A
VGS = 0V, IS = -0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Ciss
—
55.4
—
pF
Output Capacitance
Coss
—
14.7
—
pF
Reverse Transfer Capacitance
Crss
—
11.9
—
pF
Total Gate Charge (VGS = 4.5V)
Qg
—
0.84
—
nC
Gate-Source Charge
Qgs
—
0.12
—
nC
Gate-Drain Charge
Qgd
—
0.23
—
nC
Turn-On Delay Time
tD(on)
—
16
—
ns
Turn-On Rise Time
tr
—
62
—
ns
Turn-Off Delay Time
tD(off)
—
232
—
ns
tf
—
186
—
ns
Input Capacitance
Turn-Off Fall Time
Notes:
VDS = -10V, VGS = 0V,
f = 1MHz
VDS = -6V, VGS = -4.5V,
ID = -0.2A
VDD = -6V, VGS = -4.5V,
ID = -0.2A, RG = 6Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP1555UFA
Document number: DS37123 Rev. 2 - 2
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© Diodes Incorporated
DMP1555UFA
1.0
1
VGS = -1.8V
VGS = -8.0V
VDS = -5.0V
VGS = -4.5V
0.9
VGS = -4.0V
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = -3.0V
VGS = -2.5V
0.6
VGS = -1.5V
0.4
0.7
0.6
0.5
0.4
0.3
0.2
VGS = -1.2V
0.2
T A = 150 C
TA = 85C
T A = 125 C
0.1
T A = 25C
VGS = -1.0V
T A = -55C
0
0.5
1
1.5
2
2.5
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
VGS = -1.5V
1.8
1.6
1.4
1.2
1
VGS = -1.8V
0.8
VGS = -2.5V
0.6
0.4
VGS = -4.5V
0.2
0
0.01
0
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VGS = -4.5V
0.7
0.6
1.8
1.6
VGS = -2.5V
ID = -0.2A
1.4
1.2
VGS = -4.5V
ID = -0.5A
1
0.8
0.6
0.4
0.2
TA = 85C
0.4
TA = 25C
0.3
TA = -55C
0.2
0.1
0
1
0.9
0.8
VGS = -2.5V
ID = -0.2A
0.7
0.6
0.5
0.4
VGS = -4.5V
ID = -0.5A
0.3
0.2
0.1
-25
0
25
50
75 100 125 150
T J, JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
Document number: DS37123 Rev. 2 - 2
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
0
-50
DMP1555UFA
TA = 150C
TA = 125 C
0.5
0
2
2.5
0.8
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.8
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
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0.8
0.8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1
-I D = 1mA
0.6
-ID = 250µA
0.4
0.2
0.6
TA= 150C
0.4
TA= 85C
TA= 125C
TA= 25C
0.2
TA= -55C
0
-50
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
100
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
1000
Ciss
Coss
Crss
10
6
VDS = -6V
ID = -0.2A
4
2
f = 1MHz
1
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 ypical Junction Capacitance
12
0
0
0.2
0.4 0.6
0.8
1
1.2 1.4
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
1.6
10
RDS(on)
Limited
ID, DRAIN CURRENT (A)
NEW PRODUCT
DMP1555UFA
1
DC
PW = 10s
0.1
PW = 1s
PW = 100ms
TJ(max) = 150°C
TA = 25°C
VGS = 4.5V
Single Pulse
PW = 10ms
PW = 1ms
0.01 DUT on 1 * MRP Board
0.1
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMP1555UFA
Document number: DS37123 Rev. 2 - 2
100
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DMP1555UFA
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t)=r(t) * Rthja
Rthja=447C/W
Duty Cycle, D=t1 / t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A3
A1
A
Seating Plane
D
e
L (2x)
b (2x)
K
E
E1
Pin#1
R0.075
X2-DFN0806-3
Dim Min Max Typ
A
0.375 0.40 0.39
A1
0
0.05 0.02
A3
0.10
b
0.10 0.20 0.15
D
0.55 0.65 0.60
D1
0.35 0.45 0.40
E
0.75 0.85 0.80
E1
0.20 0.30 0.25
e
0.35
K
0.20
L
0.20 0.30 0.25
All Dimensions in mm
D1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
Y2
X (2x)
Y (2x)
C
X
X1
X2
Y
Y1
Y2
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
C
X2
DMP1555UFA
Document number: DS37123 Rev. 2 - 2
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DMP1555UFA
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NEW PRODUCT
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Copyright © 2014, Diodes Incorporated
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DMP1555UFA
Document number: DS37123 Rev. 2 - 2
6 of 6
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September 2014
© Diodes Incorporated