CYSTEKEC MTE050N15BRH8-0-T6-G N-channel enhancement mode power mosfet Datasheet

Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 1/11
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE050N15BRH8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=3.4A
RDS(ON)@VGS=6V, ID=3.3A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
150V
16A
4.3A
49.1mΩ(typ)
58.5 mΩ(typ)
Outline
MTE050N15BRH8
DFN5×6
Pin 1
D
D
D
D
D
D
S
D
G
S
S
S
S
G:Gate D:Drain S:Source
D
G
S
Pin 1
Ordering Information
Device
MTE050N15BRH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE050N15BRH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
Limits
Unit
150
±20
16
10
4.3 *3
3.4 *3
50 *1,2
36
128
36
14.4
2.5 *3
1.6 *3
-55~+150
V
A
mJ
W
°C
100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=4.5A, Rated VDS=150V N-CH
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
3.5
50 *3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
MTE050N15BRH8
Min.
Typ.
Max.
150
2
-
5.5
49.1
58.5
4
±100
1
5
65
82
-
1206
80
7.3
-
Unit
V
S
nA
μA
mΩ
pF
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3A
VGS=±20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=55°C
VGS =10V, ID=3.4A
VGS =6V, ID=3.3A
VDS=80V, VGS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
20.1
5.3
4.7
15.4
17.2
35.6
8.8
2
Max.
-
-
0.78
44.3
71.7
16
50
1.2
-
Unit
Test Conditions
nC
VDS=75V, VGS=10V, ID=3.4A
ns
VDS=100V, ID=1A, VGS=10V,
RGS=6Ω
Ω
f=1MHz
A
V
ns
nC
IS=3.2A, VGS=0V
IF=3.2A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTE050N15BRH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 4/11
Recommended Soldering Footprint & Stencil Design
unit : mm
MTE050N15BRH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 5/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
40
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
50
6V
30
5V
20
4.5V
10
VGS=4V
0
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=6V
10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.1
1
10
ID, Drain Current(A)
0
100
4
6
8 10 12 14 16
IDR , Reverse Drain Current(A)
18
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
180
ID=3.4A
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
2
160
140
120
100
80
60
40
20
2
VGS=10V, ID=3.4A
RDSON@Tj=25°C : 49.1mΩ typ.
1.6
1.2
0.8
0.4
0
0
0
MTE050N15BRH8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 6/11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
10
Crss
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
1
0
10
20
30
40
50
60
VDS, Drain-Source Voltage(V)
70
-75 -50 -25
80
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=30V, 75V, 120V
from left to right
VDS=10V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=15V
0.1
Pulsed
Ta=25°C
8
6
4
2
ID=3.4A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
100
10
100μs
1
1ms
10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA =50°C/W, Single Pulse
1s
DC
MTE050N15BRH8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA =50°C/W
Single Pulse
0.5
0
0.01
0.01
ID, Maximum Drain Current(A)
4.5
RDS(ON)
Limited
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
25
50
75
100
125
150
Tj, Junctione Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 7/11
Typical Characteristics(Cont.)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
20
100
ID, Maximum Drain Current(A)
ID, Drain Current(A)
RDS(ON)
Limited
10
100μs
1ms
1
10ms
TC=25°C, Tj=150°C, VGS=10V
RθJC=2.5°C/W, Single Pulse
100ms
DC
16
12
8
4
VGS=10V, RθJC=3.5°C/W
0
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
25
1000
Typical Transfer Characteristics
50
300
VDS=10V
Power (W)
30
20
75
100
125
TC , Case Temperature(°C)
150
175
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX) =150°C
TA=25°C
RθJA =50°C/W
250
40
ID, Drain Current (A)
50
200
150
100
10
50
0
0.0001
0
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Single Pulse Maximum Power Dissipation
600
Power (W)
500
TJ(MAX) =150°C
TC=25°C
RθJC=3.5°C/W
400
300
200
100
0
0.0001
0.001
MTE050N15BRH8
0.01
0.1
Pulse Width(s)
1
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 8/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=3.5 °C/W
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50 °C/W
0.05
0.02
0.01
0.01
0.001
1.E-04
MTE050N15BRH8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
MTE050N15BRH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 10/11
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE050N15BRH8
CYStek Product Specification
Spec. No. : C033H8
Issued Date : 2017.11.15
Revised Date :
Page No. : 11/11
CYStech Electronics Corp.
DFN5×6 Dimension
Marking:
Device Name
E050N
15BR
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Min.
Max.
0.90
1.10
0.00
0.05
0.33
0.51
0.20
0.30
4.80
5.00
3.61
3.96
5.90
6.10
5.70
5.80
DIM
A
A1
b
C
D1
D2
E
E1
Inches
Min.
Max.
0.035
0.043
0.000
0.002
0.013
0.020
0.008
0.012
0.189
0.197
0.142
0.156
0.232
0.240
0.224
0.228
DIM
E2
e
H
K
L
L1
θ
Millimeters
Min.
Max.
3.38
3.78
1.27 BSC
0.41
0.61
1.10
0.51
0.71
0.06
0.20
8°
12°
Inches
Min.
Max.
0.133
0.149
0.050 BSC
0.016
0.024
0.043
0.020
0.028
0.002
0.008
8°
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE050N15BRH8
CYStek Product Specification
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