SSC FRA807G 8.0 amps. glass passivated fast recovery rectifier Datasheet

FRA801G thru FRA807G
8.0 AMPS. Glass Passivated Fast
Recovery Rectifiers
FEATURES
TO-220AC
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.185(4.70)
.175(4.44)
.412(10.5)
MAX
.055(1.40)
.045(1.14)
DIA
.154(3.91)
.148(3.74)
.113(2.87)
.103(2.62)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
MECHANICAL DATA
2
.16(4.06)
.14(3.56)
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds .16”, (4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
.025(0.64)
.014(0.35)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol FRA
VRRM
VRMS
VDC
801G
FRA
802G
FRA
803G
FRA
804G
FRA
805G
FRA
806G
FRA
807G
Units
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
I(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Maximum Instantaneous Forward Voltage @ 8.0A
VF
1.3
5.0
100
V
uA
uA
nS
pF
o
C/W
o
C
@TC = 55 oC
Maximum DC Reverse Current @ TC=25 oC
at Rated DC Blocking Voltage @ TC=125 oC
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T J=25℃
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Notes:
IR
Trr
Cj
RθJA
150
TJ ,TSTG
250
50
3.0
-65 to +150
500
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
09/18/2007 Rev.1.00
www.SiliconStandard.com
1
FRA801G thru FRA807G
RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
8
40
INSTANTANEOUS REVERSE CURRENT. ( A)
AVERAGE FORWARD CURRENT. (A)
10
6
4
2
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Tj=125 0C
10
2
1
0.4
PEAK FORWARD SURGE CURRENT. (A)
150
Tj=25 0C
0.2
TJ=125 0C
125
0.1
8.3ms Single Half Sine Wave
JEDEC Method
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
25
200
100
0
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT. (A)
1
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
100
CAPACITANCE.(pF)
Tj=75 0C
4
80
60
40
40
20
10
4
2
1
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
0.4
20
0
0.1
0.2
0.5
1
5
10
50
100
0.1
0.6
500 1000
REVERSE VOLTAGE. (V)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
09/18/2007 Rev.1.00
0
-0.25A
(+)
-1.0A
www.SiliconStandard.com
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2
FRA801G thru FRA807G
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
09/18/2007 Rev.1.00
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