NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 0.2A, IB = 0, Note 1 80 – – V ICEO VCE = 40V, IB = 0 – – 1 mA ICEX VCE = 80V, VEB(off) = 1.5V – – 2 mA VCE = 80V, VEB(off) = 1.5V, TC = +150°C – – 10 mA ICBO VCB = 80V, IE = 0 – – 2 mA IEBO VBE = 5V, IC = 0 – – 5 mA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 25A, VCE = 2V 15 – 60 IC = 50A, VCE = 5V 5 – – IC = 25A, IB = 2.5A – – 1 V IC = 50A, IB = 10A – – 5 V Base–Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 2.5A – – 2 V Base–Emitter ON Voltage VBE(on) IC = 25A, VCE = 2V – – 2 V fT IC = 5A, VCE = 10V, f = 1MHz 2 – – MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz – – 1200 pF Small–Signal Current Gain hfe IC = 10A, VCE = 5V, f = 1kHz 15 – – Dynamic Characteristics Current Gain–Bandwidth Product Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case