ON ECH8659-TL-W Power mosfet Datasheet

ECH8659
Power MOSFET
30V, 24mΩ, 7A, Dual N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• 4V drive
• Composite type, Facilitating high-density mounting
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
24mΩ@ 10V
ID Max
30V
41mΩ@ 4.5V
7A
55mΩ@ 4V
Typical Applications
• LiB Protection Switch
• Motor Drive
ELECTRICAL CONNECTION
N-Channel
8
7
6
5
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
7
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
40
A
PD
1.3
W
PT
1.5
W
Tj
150
°C
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
Junction Temperature
V
2
3
PACKING TYPE : TL
4
MARKING
TE
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
RθJA
© Semiconductor Components Industries, LLC, 2015
May 2015 - Rev. 2
1
Lot No.
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Junction to Ambient
When mounted on ceramic substrate
2
(900mm × 0.8mm) 1unit
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
96.1
1
Unit
°C/W
Publication Order Number :
ECH8659/D
ECH8659
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Conditions
Value
min
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
30
VDS=10V, ID=1mA
1.2
VDS=10V, ID=3.5A
2.2
typ
max
Unit
V
1
μA
±10
μA
2.6
V
3.7
S
RDS(on)1
RDS(on)2
ID=3.5A, VGS=10V
18
24
mΩ
ID=2A, VGS=4.5V
29
41
mΩ
RDS(on)3
Ciss
ID=2A, VGS=4V
39
55
mΩ
Output Capacitance
Coss
VDS=10V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Static Drain to Source On-State
Resistance
Input Capacitance
710
pF
120
pF
72
pF
td(on)
10
ns
Rise Time
tr
25
ns
Turn-OFF Delay Time
td(off)
43
ns
Fall Time
tf
25
ns
Total Gate Charge
Qg
11.8
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
See specified Test Circuit
VDS=15V, VGS=10V, ID=3.5A
2.4
nC
2.0
nC
VSD
Forward Diode Voltage
IS=7A, VGS=0V
0.79
1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
10V
0V
VDD=15V
VIN
ID=3.5A
RL=4.3Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
ECH8659
50Ω
S
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2
ECH8659
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3
ECH8659
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4
ECH8659
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
Recommended
Soldering Footprint
7 : Drain1
8 : Drain1
2.8
0.6
0.4
0.65
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
TE
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
ECH8659-TL-H
ECH8659-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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