Central CTLDM7590 Surface mount p-channel enhancement-mode silicon mosfet Datasheet

CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7590 is an
enhancement-mode P-channel MOSFET designed for
applications including high speed pulsed amplifiers and
drivers. This MOSFET has beneficially low rDS(ON),
low threshold voltage, and very low gate charge
characteristics.
MARKING CODE: 2
APPLICATIONS:
• Load/Power Switches
• Boost/Buck Converters
• Battery Charging/Power Management
FEATURES:
• ESD protection up to 2kV
• Power dissipation: 125mW
• Low rDS(ON)
• Low threshold voltage
• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
TLMTM leadless surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
ΘJA
TLM3D6D8 CASE
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=5.0V, VDS=0
IDSS
VDS=5.0V, VGS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=VGS, ID=250μA
rDS(ON)
VGS=4.5V, ID=100mA
rDS(ON)
VGS=2.5V, ID=50mA
rDS(ON)
VGS=1.8V, ID=20mA
rDS(ON)
VGS=1.5V, ID=10mA
rDS(ON)
VGS=1.2V, ID=1.0mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
Qgs
VDS=10V, VGS=4.5V, ID=100mA
Qgd
VDS=10V, VGS=4.5V, ID=100mA
gFS
VDS=5.0V, ID=125mA
Crss
VDS=15V, VGS=0, f=1.0MHz
Ciss
VDS=15V, VGS=0, f=1.0MHz
Coss
VDS=15V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=4.5V, ID=200mA
toff
VDD=10V, VGS=4.5V, ID=200mA
UNITS
V
V
mA
mA
mW
°C
°C/W
20
8.0
140
600
125
-65 to +150
1000
otherwise noted)
MIN
TYP
20
0.4
4.0
5.5
8.0
11
20
0.50
0.17
0.11
140
4.0
10
3.7
35
100
MAX
100
50
100
1.0
5.0
7.0
10
17
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
R3 (21-September 2012)
CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM3D6D8 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 2
R3 (21-September 2012)
w w w. c e n t r a l s e m i . c o m
CTLDM7590
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (21-September 2012)
w w w. c e n t r a l s e m i . c o m
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