CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE: 2 APPLICATIONS: • Load/Power Switches • Boost/Buck Converters • Battery Charging/Power Management FEATURES: • ESD protection up to 2kV • Power dissipation: 125mW • Low rDS(ON) • Low threshold voltage • Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID ID PD TJ, Tstg ΘJA TLM3D6D8 CASE ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=5.0V, VDS=0 IDSS VDS=5.0V, VGS=0 IDSS VDS=16V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VDS=VGS, ID=250μA rDS(ON) VGS=4.5V, ID=100mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=1.8V, ID=20mA rDS(ON) VGS=1.5V, ID=10mA rDS(ON) VGS=1.2V, ID=1.0mA Qg(tot) VDS=10V, VGS=4.5V, ID=100mA Qgs VDS=10V, VGS=4.5V, ID=100mA Qgd VDS=10V, VGS=4.5V, ID=100mA gFS VDS=5.0V, ID=125mA Crss VDS=15V, VGS=0, f=1.0MHz Ciss VDS=15V, VGS=0, f=1.0MHz Coss VDS=15V, VGS=0, f=1.0MHz ton VDD=10V, VGS=4.5V, ID=200mA toff VDD=10V, VGS=4.5V, ID=200mA UNITS V V mA mA mW °C °C/W 20 8.0 140 600 125 -65 to +150 1000 otherwise noted) MIN TYP 20 0.4 4.0 5.5 8.0 11 20 0.50 0.17 0.11 140 4.0 10 3.7 35 100 MAX 100 50 100 1.0 5.0 7.0 10 17 UNITS nA nA nA V V Ω Ω Ω Ω Ω nC nC nC mS pF pF pF ns ns R3 (21-September 2012) CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM3D6D8 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 2 R3 (21-September 2012) w w w. c e n t r a l s e m i . c o m CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R3 (21-September 2012) w w w. c e n t r a l s e m i . c o m