ASB ASX201 250 ~ 5000 mhz mmic amplifier Datasheet

ASX201
250 ~ 5000 MHz MMIC Amplifier
Features
Description
 16 dB Gain at 2 GHz
The ASX201, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication systems up to 5 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
 21 dBm P1dB at 2 GHz
 34.5 dBm Output IP3 at 2 GHz
 MTTF > 100 Years
 Single Supply
ASX201
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
2450
3500
Gain
dB
19.0
16.0
14.0
12.0
 IF (450 MHz)
S11
dB
-13
-15
-15
-14
 LTE
S22
dB
-13
-18
-18
-14
 CDMA
Output IP31)
dBm
34.0
34.5
36.0
34.0
 GSM
Noise Figure
dB
4.0
3.3
3.3
3.2
 PCS
Output P1dB
dBm
20
21
22
20
 WCDMA
Current
mA
66
66
66
66
Device Voltage
V
+4.8
+4.8
+4.8
+4.8
1) OIP3 measured with two tones at an output power of +5 dBm/tone separated by 1 MHz
Application Circuit
 WiBro
 WLAN
 WiMAX
 C-Band (4500 MHz)
Product Specifications
Parameters
Units
Min
Typ
Testing Frequency
MHz
Gain
dB
S11
dB
-15
S22
dB
-18
Output IP3
dBm
Noise Figure
dB
Output P1dB
dBm
20
21
Current
mA
61
66
Device Voltage
V
Max
2000
15.0
33.0
16.0
34.5
3.3
3.5
72
+4.8
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)
Thermal Resistance
1)
Pin No.
Function
+6 V
1
RF IN
+150 C
2
GND
+25 dBm
3
RF OUT / Bias
166 C/W
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Outline Drawing
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
ASX201
Pxxxx
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.89
1.04
0.36
0.42
0.41
0.47
0.38
0.40
4.40
4.50
1.40
1.60
3.64
--2.40
2.50
2.90
3.00
0.35
0.40
0.65
0.75
1.40
1.50
Pin No.
Function
1
RF IN
2
GND
3
RF OUT / Bias
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
Mounting Recommendation (In mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 550 V
MM
Class A
Voltage Level: 50 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
2/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
450
Magnitude S21 (dB)
21.0
Magnitude S11 (dB)
-18
Magnitude S22 (dB)
-15
Output P1dB (dBm)
20.5
1)
450 MHz
+5 V
Output IP3 (dBm)
35
Noise Figure (dB)
5.5
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C6=1 F
C5=100pF
L1=82 nH
RF IN
C1=100 pF
L3=6.8 nH
L2=33 nH
C2=100 pF
RF OUT
ASX201
C3=4 pF
C4=7 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
200
-15
-20
300
400
500
600
700
-25
200
300
400
Frequency (MHz)
500
600
700
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
200
0
300
400
500
600
700
0
500
3/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
LTE
Frequency (MHz)
698 ~ 787
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-12
Magnitude S22 (dB)
-10
Output P1dB (dBm)
20
1)
698 ~ 787 MHz
+5 V
Output IP3 (dBm)
33.5
Noise Figure (dB)
3.7
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=12 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=3.9 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
400
-15
-20
500
600
700
800
900
1000
-25
400
500
600
Frequency (MHz)
700
800
900
1000
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
400
3
2
1
0
500
600
700
800
900
1000
0
500
4/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
CDMA Rx
Frequency (MHz)
824 ~ 849
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-18
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
824 ~ 849 MHz
Output IP3 (dBm)
34
+5 V
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=12 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=5 pF
S-parameters & K-factor
25
0
-5
20
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
600
-25
700
800
900
1000
1100
-30
600
1200
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
600
3
2
1
0
700
800
900
1000
1100
1200
0
500
5/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
CDMA Tx
Frequency (MHz)
869 ~ 894
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-13
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
869 ~ 894 MHz
Output IP3 (dBm)
34
+5 V
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=10 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=5 pF
S-parameters & K-factor
25
0
20
-5
10
o
-40 c
o
25 c
o
85 c
5
0
600
S11 (dB)
Gain (dB)
15
700
800
900
1000
1100
-10
o
-40 c
o
25 c
o
85 c
-15
1200
-20
600
700
800
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
600
800
900
1000
1100
1200
2
1
1100
1200
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
6/22
1000
3
0
700
900
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
24
80
22
70
20
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
18
Frequency = 900 MHz
16
-40
-20
0
20
40
60
80
14
-60
100
-40
-20
0
o
Temperature ( C)
20
40
60
80
100
o
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 900 MHz)
P1dB vs. Temperature
24
45
40
22
Output IP3 (dBm)
P1dB (dBm)
35
20
18
30
25
o
-40 c
o
25 c
o
85 c
20
Frequency = 900 MHz
16
15
14
-60
-40
-20
0
20
40
60
80
100
10
-1
0
1
o
7/22
2
3
4
5
6
7
8
9
10
11
12
13
14
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
GSM
Frequency (MHz)
890 ~ 960
Magnitude S21 (dB)
19.0
Magnitude S11 (dB)
-13
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
890 ~ 960 MHz
Output IP3 (dBm)
34
+5 V
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=10 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=4 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
600
-15
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
600
3
2
1
0
700
800
900
1000
1100
1200
0
500
8/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
PCS Rx
Frequency (MHz)
1750 ~ 1780
Magnitude S21 (dB)
16.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
Output P1dB (dBm)
20
1750 ~ 1780 MHz
Output IP3 (dBm)
34
+5 V
Noise Figure (dB)
3.5
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.7 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.7 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
1500
-15
-20
1600
1700
1800
1900
-25
1500
2000
1600
1700
Frequency (MHz)
1800
1900
2000
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
3
2
1
-25
-30
1500
0
1600
1700
1800
1900
2000
0
500
9/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
PCS Tx
Frequency (MHz)
1840 ~ 1870
Magnitude S21 (dB)
16.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
Output P1dB (dBm)
21
1840 ~ 1870 MHz
Output IP3 (dBm)
34.5
+5 V
Noise Figure (dB)
3.5
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.7 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.2 pF
S-parameters & K-factor
25
0
-5
20
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
1600
-25
1700
1800
1900
2000
-30
1600
2100
1700
1800
Frequency (MHz)
1900
2000
2100
Frequency (MHz)
-5
5
-10
4
Stability Factor
S22 (dB)
-15
-20
-25
3
2
1
-30
-35
1600
0
1700
1800
1900
2000
2100
0
500
10/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WCDMA Rx
Frequency (MHz)
1920 ~ 1980
Magnitude S21 (dB)
16.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
Output P1dB (dBm)
21
1920 ~ 1980 MHz
Output IP3 (dBm)
34.5
+5 V
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.2 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.2 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1700
1800
1900
2000
2100
2200
-30
1700
1800
1900
Frequency (MHz)
2000
2100
2200
Frequency (MHz)
-10
5
-15
4
Stability Factor
S22 (dB)
-20
-25
-30
3
2
1
-35
-40
1700
0
1800
1900
2000
2100
2200
0
500
11/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WCDMA Tx
Frequency (MHz)
2110 ~ 2170
Magnitude S21 (dB)
15.5
Magnitude S11 (dB)
-17
Magnitude S22 (dB)
-18
Output P1dB (dBm)
20.5
2110 ~ 2170 MHz
Output IP3 (dBm)
36
+5 V
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=1.8 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1900
2000
2100
2200
2300
2400
-30
1900
2000
2100
Frequency (MHz)
2300
2400
5
-10
-15
4
Stability Factor
-20
S22 (dB)
2200
Frequency (MHz)
-25
-30
3
2
1
-35
-40
1900
0
2000
2100
2200
2300
2400
0
500
12/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiBro
Frequency (MHz)
2300 ~ 2400
Magnitude S21 (dB)
14.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
Output P1dB (dBm)
22
2300 ~ 2400 MHz
Output IP3 (dBm)
36
+5 V
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
4 mm
C3=2 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
5
-20
0
1800
2000
2200
2400
2600
2800
-25
1800
3000
2000
2200
Frequency (MHz)
2600
2800
3000
5
-5
-10
4
Stability Factor
-15
S22 (dB)
2400
Frequency (MHz)
-20
-25
3
2
1
-30
-35
1800
0
2000
2200
2400
2600
2800
3000
0
500
13/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WLAN
Frequency (MHz)
2400 ~ 2500
Magnitude S21 (dB)
14.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
Output P1dB (dBm)
22
2400 ~ 2500 MHz
Output IP3 (dBm)
36
+5 V
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
1)
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
4 mm
C3=1.8 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1800
2000
2200
2400
2600
2800
-30
1800
3000
2000
2200
Frequency (MHz)
2400
2600
2800
3000
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
3
2
1
-25
-30
1800
0
2000
2200
2400
2600
2800
3000
0
500
14/22
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiMAX
Frequency (MHz)
2500 ~ 2700
Magnitude S21 (dB)
14.0
Magnitude S11 (dB)
-14
Magnitude S22 (dB)
-17
Output P1dB (dBm)
21
1)
2500 ~ 2700 MHz
+5 V
Output IP3 (dBm)
37.5
Noise Figure (dB)
2.9
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
3.5 mm
C3=1.5 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
o
-40 c
o
25 c
o
85 c
5
0
2000
2200
2400
2600
2800
3000
-15
o
-40 c
o
25 c
o
85 c
-20
3200
-25
2000
2200
2400
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
2000
2400
2600
2800
3000
3200
2
1
3000
3200
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
15/22
2800
3
0
2200
2600
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
20
80
18
70
16
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
14
Frequency = 2600 MHz
12
-40
-20
0
20
40
60
80
10
-60
100
-40
-20
0
o
Temperature ( C)
20
40
60
80
100
o
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 2600 MHz)
P1dB vs. Temperature
26
50
45
24
Output IP3 (dBm)
P1dB (dBm)
40
22
20
35
30
o
-40 c
o
25 c
o
85 c
25
Frequency = 2600 MHz
18
20
16
-60
-40
-20
0
20
40
60
80
100
15
1
2
3
4
o
16/22
5
6
7
8
9
10
11
12
13
14
15
16
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
LTE ACLR – 10 MHz & 20 MHz
-40
ACLR (dBc)
-45
-50
20 MHz BW
-55
-60
10 MHz BW
-65
-70
0
2
4
6
8
Output Power (dBm)
10
12
1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 2.6 GHz
LTE ACLR – 20 MHz
2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 2.6 GHz
17/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiMAX
Frequency (MHz)
3400 ~ 3600
Magnitude S21 (dB)
12.0
Magnitude S11 (dB)
-12
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
1)
3400 ~ 3600 MHz
+5 V
Output IP3 (dBm)
35
Noise Figure (dB)
3.2
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=22 nH
C1=27 pF
RF IN
C2=27 pF
RF OUT
ASX201
C3=0.75 pF
S-parameters & K-factor
20
0
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
o
-40 c
o
25 c
o
85 c
o
-40 c
o
25 c
o
85 c
5
0
3000
3200
3400
3600
3800
-20
4000
-25
3000
3200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
3000
3200
3400
3600
3600
3800
4000
3800
3
2
1
4000
0
0
500
Frequency (MHz)
18/22
3400
Frequency (MHz)
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
18
80
16
70
14
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
12
Frequency = 3500 MHz
10
-40
-20
0
20
40
60
80
8
-60
100
-40
-20
0
o
Temperature ( C)
20
40
60
80
100
o
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 3500 MHz)
P1dB vs. Temperature
26
50
45
24
40
Output IP3 (dBm)
P1dB (dBm)
22
20
18
Frequency = 3500 MHz
16
14
-60
35
30
o
-40 c
o
25 c
o
85 c
25
20
-40
-20
0
20
40
60
80
100
15
1
2
3
o
19/22
4
5
6
7
8
9
10
11
12
13
14
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
C-Band
Frequency (MHz)
4500
Magnitude S21 (dB)
8.9
Magnitude S11 (dB)
-16
Magnitude S22 (dB)
-13
Output P1dB (dBm)
21.5
1)
4500 MHz
+5 V
Output IP3 (dBm)
37
Noise Figure (dB)
3.4
Device Voltage (V)
+4.8
Current (mA)
68
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
S-parameters & K-factor
0
15
10
-10
S11 (dB)
Gain (dB)
-5
-15
5
-20
0
4000
4200
4400
4600
4800
5000
-25
4000
4200
4400
4600
4800
5000
Frequency (MHz)
Frequency (MHz)
0
-5
S22 (dB)
-10
-15
-20
-25
4000
4200
4400
4600
4800
5000
Frequency (MHz)
20/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Performance with varying VDEVICE
Gain
(dB)
S11
(dB)
S22
(dB)
OIP31)
(dBm)
P1dB
(dBm)
NF
(dB)
20.0
-21.5
-14.3
35.3
21.0
4.06
19.7
-19.1
-14.4
31.3
18.4
3.63
38
19.2
-16.5
-14.7
27.5
15.5
3.15
+4.8
66
16.4
-27.8
-27.4
35.1
21.3
2.88
+4.5
51
16.2
-26.8
-25.2
31.5
18.8
2.55
+4.2
38
15.9
-24.0
-23.0
27.9
16.1
2.27
+4.8
66
12.3
-14.4
-13.4
35.2
19.6
3.71
+4.5
51
12.2
-14.0
-13.2
30.9
16.4
3.27
+4.2
38
11.8
-13.2
-12.7
27.2
14.3
3.01
VDEVICE
(V)
Current
(mA)
+4.8
66
+4.5
51
+4.2
Freq.
(MHz)
880
1950
3500
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
21/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX201
250 ~ 5000 MHz MMIC Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2008-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in
any form or by any means without the prior written consent of ASB.
22/22
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
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