Diodes LMN400B01-7 400ma load switch featuring pnp transistor and n-mosfet with gate pull-down resistor Datasheet

LMN400B01
Lead-free Green
400mA LOAD SWITCH FEATURING PNP
TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR
NEW PRODUCT
General Description
•
LMN400B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
VCE(SAT) which does not depend on input voltage and can
support continuous maximum current of 400 mA . It also
contains a discrete N-MOSFET with gate pull-down resistor
that can be used as control. The component devices can
be used as a part of a circuit or as a stand alone discrete
device.
6
5
4
1
2
3
Features
•
•
•
•
•
•
Fig. 1: SOT-26
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
C_Q1
B_Q1
S_Q2
6
5
4
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
C
Q1
PNP
Mechanical Data
•
•
•
•
•
•
•
•
DDTB122LU_DIE
B
R2
R3
220
E
R1
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
10K
37K
S
G
Q2
NMOSFET
D
DSNM6047_DIE
Moisture sensitivity: Level 1 per J-STD-020C
1
2
E_Q1
G_Q2
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
3
D_Q2
Fig. 2 Schematic and Pin Configuration
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.016 grams (approx.)
Reference
Device Type
R1 (NOM)
DDTB122LU_DIE
Sub-Components
Q1
PNP Transistor
10K
R2 (NOM) R3 (NOM)
220

Figure
2
DSNM6047_DIE (with Gate Pull-Down Resistor)
Q2
N-MOSFET


37K
2
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Pd
300
mW
Power Derating Factor above 100°C
Pder
2.4
mW/°C
Output Current
Iout
400
mA
Power Dissipation (Note 3)
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to
one heated junction of PNP transistor)
Notes:
Symbol
Value
Unit
Tj, Tstg
-55 to +150
°C
RθJA
417
°C/W
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30699 Rev. 5 - 2
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LMN400B01
 Diodes Incorporated
NEW PRODUCT
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1) @ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
V
Supply Voltage
Vcc
-50
Input Voltage
Vin
+5 to -6
V
Output Current
IC
-400
mA
Sub-Component Device:
N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
Characteristic
VDSS
60
V
Drain Gate Voltage (RGS ≤1MOhm)
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3)
Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous Source Current
DS30699 Rev. 5 - 2
ID
IS
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+/-20
+/-40
115
800
115
V
mA
mA
LMN400B01
NEW PRODUCT
Electrical Characteristics:
Pre-Biased PNP Transistor (Q1) @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Cut Off Current
ICBO


-100
nA
VCB = -50V, IE = 0
Collector-Emitter Cut Off Current
ICEO


-500
nA
VCE = -50V, IB = 0
Emitter-Base Cut Off Current
IEBO


-1
mA
VEB = -5V, IC = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-50


V
IC = -10 uA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50


V
IC = -2 mA, IB = 0
VI(OFF)


-0.5
V
VCE = -5V, IC = -100uA
VOH
-4.9


V
VCC = -5V, VB = -0.05V,
RL = 1K
IO(OFF)


-500
nA
VCC = -50V, VI = 0V

-0.055
-0.15
V
IC = -10mA, IB = -0.3mA

-0.25
-0.3
V
IC = -100mA, IB = -1mA

-0.12
-0.15
V
IC = -200mA, IB = -20mA

-0.16
-0.2
V
IC = -300mA, IB= -30mA

-0.2
-0.25
V
IC = -400mA, IB= -40mA

-0.25
-0.3
V
IC = -500mA, IB = -50mA


1.125
Ω
IC = 400mA, IB = 20mA
70
220


VCE = -5V, IC = -50 mA
70
260


VCE = -5V, IC = -100 mA
70
265


VCE = -5V, IC = -200 mA
70
225


VCE = -5V, IC = -400 mA
VI(ON)
-2.45
-1.5

V
VO = -0.3V, IIC = -2 mA
VOL

-0.1
-0.3
V
VCC = -5V, VB = -2.5V,
Io/II = -50mA /-2.5mA
OFF CHARACTERISTICS
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as ICEO)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Equivalent on-resistance*
DC Current Gain
Input On Voltage
Output Voltage (equivalent to VCE(SAT) or VO(on))
VCE(SAT)
RCE(SAT)
hFE
Ii

-18
-28
mA
Base-Emitter Turn-on Voltage
VBE(ON)

-1.2
-1.3
V
Base-Emitter Saturation Voltage
VBE(SAT)

-1.9
-2.2

-5.25
-5.5
R2

0.22

KΩ

Pull-up Resistor (Base to Vcc supply), +/- 30%
R1

10

KΩ

Resistor Ratio (Input Resistor/Pullup resistor)
R1/R2

0.022



Transition Frequency (gain bandwidth product)
fT

200

Collector capacitance, (Ccbo-Output
Capacitance)
CC

20

Input Current
Input Resistor (Base), +/- 30%
V
VI = -5V
VCE = -5V, IC = -400mA
IC = -50mA, IB = -5mA
IC = -400mA, IB = -20mA
SMALL SIGNAL CHARACTERISTICS
CE = -10V, IE = -5mA,
MHz V
f = 100MHz
pF
VCB = -10V, IE = 0A,
f = 1MHz
* Pulse Test: Pulse width, tp <300 µS, Duty Cycle, d ≤0.02
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LMN400B01
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
V(BR)DSS
60


V
VGS = 0V, ID = 10uA
IDSS


1
µA
VGS =0V, VDS = 60V
Gate-Body Leakage Current, Forward
IGSSF


0.95
mA
VGS = 20V, VDS = 0V
Gate-Body Leakage Current, Reverse
IGSSR


-0.95
mA
VGS = -20V, VDS = 0V
Gate Source Threshold Voltage (Control Supply
Voltage)
VGS(th)
1
1.86
2.2
V
Static Drain-Source On-State Voltage
VDS(on)

0.08
1.5

0.15
3.75
500



1.55
3

1.4
2
80
240

OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
ON CHARACTERISTICS (Note 4)
ID(on)
On-State Drain Current
RDS(on)
Static Drain-Source On Resistance
V
mA
Ω
VDS = VGS, ID = 0.25mA
VGS = 5V, ID = 50mA
VGS = 10V, ID = 115mA
VGS = 10V,
VDS ≥ 2 x VDS(ON)
VGS = 5V, ID = 50mA
VGS = 10V, ID = 500mA
VDS ≥2 x VDS(ON), ID = 115 mA
Forward Transconductance
gFS
80
350

Gate Pull-Down Resistor, +/- 30%
R3

37

KΩ
Input Capacitance
Ciss


50
pF
Output Capacitance
Coss


25
pF
Reverse Transfer Capacitance
Crss


5
pF
Turn-On Delay Time
td(on)


20
ns
Turn-Off Delay Time
td(off)


40
ns
VDD = 30V, VGS =10V,
ID = 200mA,
RG = 25Ω, RL = 150Ω
VGS = 0V, IS = 115 mA*
mS
VDS ≥2 x VDS(ON), ID = 200 mA

DYNAMIC CHARACTERISTICS
VDS = -25V, VGS = 0V,
ƒ= 1MHz
SWITCHING CHARACTERISTICS*
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
VSD

0.88
1.5
V
IS


115
mA

ISM


800
mA

* Pulse Test: Pulse width, tp <300 µS, Duty Cycle, d ≤0.02
Notes:
4. Short duration test pulse used to minimize self-heating effect.
Typical Characteristics
500
350
lb = 8mA
450
IC, COLLECTOR CURRENT (mA)
300
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified
250
200
150
100
50
lb = 9mA
400
lb = 10mA
350
lb = 7mA
TA = 25°C
lb = 6mA
lb = 5mA
lb = 4mA
lb = 3mA
300
lb = 2mA
250
200
lb = 1mA
150
100
50
0
0
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs
Ambient Temperature
DS30699 Rev. 5 - 2
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCE_SAT COLLECTOR VOLTAGE(V)
Fig. 4, Output Current vs.
Voltage Drop (Pass Element PNP)
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LMN400B01
Pre-Biased PNP Transistor Characteristics
0.6
0.2
TA = -55°C
TA = 25°C
TA = 125°C
0.1
TA = 85°C
TA = 150°C
IC/IB = 20
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE (V)
IC/IB = 10
0.5
0.4
0.3
TA = 125°C
TA = 25°C
TA = 150°C
0.1
TA = 85°C
0
0.01
1
0.1
0.01
TA =-55°C
0.2
0
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 6 VCE(SAT) vs. IC
IC, COLLECTOR CURRENT (A)
Fig. 5 VCE(SAT) vs. IC
15
12
IC/IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
VBE(SAT), BASE EMITTER VOLTAGE (V)
10
8
6
4
TA = -55°C
TA = 125°C
TA = 150°C
2
TA = 25°C
IC/IB = 10
VCE = 5V
12
9
6
TA = -55°C
TA = 125°C
3
TA = 150°C
TA = 85°C
TA = 25°C
TA = 85°C
0
0
1
10
100
1000
10
IC, COLLECTOR CURRENT (mA)
Fig. 7 VBE(SAT) vs. IC
100
1000
10000
IC, COLLECTOR CURRENT (mA)
Fig. 8 VBE(ON) vs. IC
VCE = 5V
400
hFE, DC CURRENT GAIN
NEW PRODUCT
0.3
TA = 150°C
TA = 125°C
300
TA = 85°C
TA = 25°C
200
TA =-55°C
100
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 9 hFE vs. IC
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LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics
1.4
1.4
VDS = 10V
VGS = 10V
TA =-55°C
1.2
1.2
1.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 6V
VGS = 5V
VGS = 8V
0.8
VGS = 4V
0.6
0.4
0.2
TA = 25°C
TA = 125°C
1
TA = 85°C
0.8
0.6
TA = 150°C
0.4
0.2
VGS = 3V
0
0
0
1
2
0
5
4
3
2
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Output Characteristics
4
3
6
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 11 Transfer Characteristics
6
2.2
VGS(th), GATE THRESHOLD VOLTAGE (V)
VDS = 10V
VDS = VGS
ID = 0.25mA
Pulsed
2
VGS = 5V
Pulsed
5
1.8
4
TA = 125°C
1.6
3
1.4
2
TA = 150°C
TA = 85°C
1.2
TA = 25°C
1
1.0
-75
-50
-25
0
25
50
75
TA = -55°C
0
0.001
100 125 150
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
TJ, JUNCTION TEMPERATURE (°C)
Fig. 12 Gate Threshold Voltage
vs. Junction Temperature
1
7
4
VGS = 10V
Pulsed
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (W)
NEW PRODUCT
TA = 25°C
3
TA = 125°C
2
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
TA = 25°C
Pulsed
6
5
4
ID = 115mA
3
2
ID = 50mA
1
0
0
0.01
0.001
1
0.1
ID, DRAIN CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance
vs. Drain Current
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0
2
4
6
8
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 15 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
LMN400B01
1
2.5
ID = 115mA
2
ID = 50mA
1.5
1
TA = 125°C
IS, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
VGS = 10V
Pulsed
TA = 150°C
TA = 25°C
TA = 85°C
0.1
TA = -55°C
0.01
VGS = 5V
Pulsed
0.5
0.001
-75 -50
-25
0
25
50
75
100 125 150
0.5
0
Tj, JUNCTION TEMPERATURE (°C)
Fig. 16 Static Drain-Source On-State Resistance
vs. Junction Temperature
VGS = 10V
gFS, FORWARD TRANSCONDUCTANCE (mS)
IS, REVERSE DRAIN CURRENT (A)
1
TA= 25°C
=25
C
Pulsed
VGS = 5V
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
Fig. 18 Reverse Drain Current
vs. Body Diode Forward Voltage
DS30699 Rev. 5 - 2
1
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 17 Reverse Drain Current
vs. Source-Drain Voltage
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900
800
TA = -55°C
TA = 25°C
700
600
TA = 85°C
500
400
TA = 125°C
TA = 150°C
300
200
100
0
0
0.2
0.4
0.8
0.6
ID, DRAIN CURRENT (A)
Fig. 19 Forward Transconductance
vs. Drain Current (VDS > ID *RDS(ON))
LMN400B01
NEW PRODUCT
Application Details
•
PNP Transistor (DDTB122LU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN400B01 can be used as a discrete
entity for general application or as an integrated
circuit to function as a Load Switch. When it is used
as the latter as shown in Fig 20, various input voltage
sources can be used as long as it does not exceed
the maximum ratings of the device. These devices
are designed to deliver continuous output load
current up to a maximum of 400 mA. The MOSFET
Switch draws no current, hence loading of control
circuit is prevented. Care must be taken for higher
level of dissipation while designing for higher load
conditions. These devices provide high power and
also consumes less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 21
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of
power management system)
Vin
E
Vout
DDTB122LU C
Q1
PNP
B
R1
10K
LOAD
R2
220
D
DSNM6047
S
NMOSFET
Q2
G
Control
R3
37K
Fig 20 : Circuit Diagram
Typical Application Circuit
5V Supply
U1
U3
Load Switch
Vin
U2
Control Logic
Circuit (PIC,
Comparator
etc)
GND
Vin
OUT1
1
Control 2
3
E_Q1
C_Q1
G_Q2
B_Q1
D_Q2
S_Q2
LMN400B01
6
Vout
Point of
Load
IN
OUT
5
4 Gnd
Voltage Regulator
Diodes Inc.
Fig 21
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LMN400B01
Note:
(Note 5)
Device
Marking Code
Packaging
Shipping
LMN400B01-7
PM3
SOT-26
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM3
YM
NEW PRODUCT
Ordering Information
PM3 = Product Type Marking Code,
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Fig. 22
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30699 Rev. 5 - 2
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LMN400B01
NEW PRODUCT
Mechanical Details
SOT-26
A
B C
H
K
M
J
D
L
F
Dim
Min
Max
Typ
A
0.35
0.5
0.38
B
1.5
1.7
1.6
C
2.7
3
2.8
D
-
-
0.95
F
-
-
0.55
H
2.9
3.1
3
J
0.013
0.1
0.05
K
1
1.3
1.1
L
0.35
0.55
0.4
M
0.1
0.2
0.15
α
0°
8°
-
All Dimensions in mm
Fig. 23
Suggested Pad Layout: (Based on IPC-SM-782)
E
Z
E
C
G
Y
X
Figure 24
Dimensions
SOT-26*
Z
3.2
G
1.6
X
0.55
Y
0.8
C
2.4
E
0.95
* Typical dimensions in mm
Fig. 24
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30699 Rev. 5 - 2
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LMN400B01
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