ON MPSW45 One watt darlington transistors npn silicon Datasheet

MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington
Transistors
NPN Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR 3
BASE
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
MPSW45A
MPSW45
VCES
40
50
Vdc
Collector −Base Voltage
MPSW45A
MPSW45
VCBO
50
60
Vdc
VEBO
12
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Emitter −Base Voltage
Operating and Storage Junction
Temperature Range
EMITTER 1
1
2
TO−92 (TO−226)
CASE 29−10
STYLE 1
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
MPS
W45x
AYWW G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPSW45x = Device Code
x = 45A Devices
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MPSW45/D
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
50
−
−
50
60
−
−
12
−
−
−
100
100
−
100
25,000
15,000
4,000
150,000
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
MPSW45
MPSW45A
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Vdc
V(BR)CBO
MPSW45
MPSW45A
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Vdc
ICBO
MPSW45
MPSW45A
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
−
Collector −Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
VCE(sat)
−
1.5
Vdc
Base− Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
VBE(sat)
−
2.0
Vdc
Base −Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
fT
100
−
MHz
Ccb
−
6.0
pF
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MPSW45, MPSW45A
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
200
BANDWIDTH = 1.0 Hz
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
500
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
0.02
10 20
50k 100k
50 100 200
Figure 3. Noise Current
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
1000
0
1.0
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
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3
500
1000
MPSW45, MPSW45A
SMALL−SIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL−SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
1.0
200k
hFE , DC CURRENT GAIN
TJ = 125°C
100k
70k
50k
25°C
30k
20k
10k
7.0k
5.0k
−55 °C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
5.0 7.0
10
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA)
500 1000
Figure 9. Collector Saturation Region
1.6
0.6
500
3.0
Figure 8. DC Current Gain
0.8
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
2.0
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
−1.0
−2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
−55 °C TO 25°C
−3.0
25°C TO 125°C
−4.0
qVB FOR VBE
−5.0
−55 °C TO 25°C
−6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MPSW45, MPSW45A
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.05
0.1
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZθJC(t) = r(t) • RθJCTJ(pk) − TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJATJ(pk) − TA = P(pk) ZθJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0k
700
500
FIGURE A
1.0 ms
300
TA = 25°C
200
tP
TC = 25°C
100 ms
PP
1.0 s
100
70
50
t1
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
PP
0.4 0.6
1/f
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
40
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
ORDERING INFORMATION
Device
MPSW45
MPSW45G
MPSW45RLRE
MPSW45RLREG
MPSW45A
MPSW45AG
MPSW45ARLRA
MPSW45ARLRAG
MPSW45AZL1
MPSW45AZL1G
Package
Shipping †
TO−92
5,000 Units / Box
TO−92
(Pb−Free)
5,000 Units / Box
TO−92
2,000 / Tape & Reel
TO−92
(Pb−Free)
2,000 / Tape & Reel
TO−92
5,000 Units / Box
TO−92
(Pb−Free)
5,000 Units / Box
TO−92
2,000 / Tape & Reel
TO−92
(Pb−Free)
2,000 / Tape & Reel
TO−92
2,000 / Ammo Pack
TO−92
(Pb−Free)
2,000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MPSW45, MPSW45A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSW45/D
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