Diodes DMN6068SE 60v n-channel enhancement mode mosfet Datasheet

A Product Line of
Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
68mΩ @ VGS= 10V
100% Unclamped Inductive Switch (UIS) test in production
•
Low on-resistance
•
Fast switching speed
5.6A
•
“Green” component and RoHS compliant (Note 1)
4.7A
•
Qualified to AEC-Q101 Standards for High Reliability
60V
100mΩ @ VGS= 4.5V
•
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
Motor control
•
Transformer driving switch
•
DC-DC Converters
•
Power management functions
•
Uninterrupted power supply
•
Case: SOT223
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See diagram below
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.112 grams (approximate)
D
SOT223
G
S
Pin Out - Top View
Top View
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN6068SE-13
Notes:
Marking
N6068
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
4,000
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YWW
N6068
DMN6068SE
Document Number DS32033 Rev. 2 - 2
= Manufacturer’s Marking
N6068 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 9 = 2009)
WW = Week (01 - 53)
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ADVANCE INFORMATION
DMN6068SE
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note 7)
(Note 7)
(Note 4)
TA = 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
Symbol
VDSS
VGS
EAS
IAS
ID
IDM
IS
ISM
Value
60
±20
37.5
5.0
5.6
4.5
4.1
20.8
4.9
20.8
Unit
V
V
mJ
A
Value
2.0
16.0
3.7
29.5
62.5
34
11.5
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 3)
PD
(Note 4)
(Note 3)
(Note 4)
(Note 6)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = 25°C.
DMN6068SE
Document Number DS32033 Rev. 2 - 2
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Thermal Characteristics
Max Power Dissipation (W)
ID Drain Current (A)
RDS(on)
10 Limited
1
DC
1s
100ms
100m
10ms
1ms
Single Pulse
T amb=25°C
10m
100m
100µs
1
10
VDS Drain-Source Voltage (V)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
70
Tamb=25°C
60
Maximum Power (W)
Thermal Resistance (°C/W)
ADVANCE INFORMATION
DMN6068SE
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
Single Pulse
Tamb=25°C
100
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
Pulse Width (s)
Document Number DS32033 Rev. 2 - 2
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
DMN6068SE
1m
Pulse Power Dissipation
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ADVANCE INFORMATION
DMN6068SE
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
0.5
±100
V
μA
nA
ID = 250μA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
V
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
⎯
⎯
gfs
VSD
trr
Qrr
⎯
⎯
S
V
ns
nC
ID= 250μA, VDS= VGS
VGS= 10V, ID= 12A
VGS= 4.5V, ID= 6A
VDS= 15V, ID= 12A
IS= 12A, VGS= 0V
⎯
19.7
0.98
145
929
3.0
0.068
0.100
⎯
1.15
⎯
⎯
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
502
45.7
27.1
5.55
10.3
1.6
3.5
3.6
10.8
11.9
8.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge(Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
Ω
Test Condition
IS= 12A, di/dt= 100A/μs
VDS= 30V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 12A
VDD= 30V, VGS= 10V
ID= 12A, RG ≅ 6.0Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN6068SE
Document Number DS32033 Rev. 2 - 2
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Typical Characteristics
10V
T = 150°C
5V
10
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
4V
1
3.5V
VGS
0.1
3V
0.01
3.5V
1
3V
2.5V
0.1
VGS
2V
1
10
0.1
T = 150°C
T = 25°C
0.01
1E-3
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1
1
10
Output Characteristics
VDS = 10V
0.1
1
VDS Drain-Source Voltage (V)
Output Characteristics
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
0
VGS(th)
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
VGS
3.5V
10
4V
1
4.5V
5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6068SE
Document Number DS32033 Rev. 2 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
4.5V
4V
10
VDS Drain-Source Voltage (V)
10
10V
0.01
0.1
RDS(on) Drain-Source On-Resistance (Ω)
ADVANCE INFORMATION
DMN6068SE
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
VGS = 0V
600
f = 1MHz
CISS
400
COSS
CRSS
200
0
0.1
1
10
8
6
4
VDS = 30V
2
ID = 12A
0
0
VDS - Drain - Source Voltage (V)
2
4
6
8
10
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
40
20
Starting T J = 25°C
15
30
10
20
5
10
100µ
1m
EAS Avalanche Energy (mJ)
IAS Avalanche Current (A)
ADVANCE INFORMATION
DMN6068SE
L Inductor (H)
Single-Pulsed Avalanche Rating
DMN6068SE
Document Number DS32033 Rev. 2 - 2
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ADVANCE INFORMATION
DMN6068SE
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN6068SE
Document Number DS32033 Rev. 2 - 2
Switching time test circuit
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ADVANCE INFORMATION
DMN6068SE
Package Outline Dimensions
DIM
A
A1
A2
b
b2
C
Millimeters
Min
Max
1.80
0.02
0.10
1.55
1.65
0.66
0.84
2.90
3.10
0.23
0.33
Inches
Min
Max
0.071
0.0008
0.004
0.0610
0.0649
0.026
0.033
0.114
0.122
0.009
0.013
DIM
D
e
e1
E
E1
L
Millimeters
Min
Max
6.30
6.70
2.30 BSC
4.60 BSC
6.70
7.30
3.30
3.70
0.90
-
Inches
Min
Max
0.248
0.264
0.0905 BSC
0.181 BSC
0.264
0.287
0.130
0.146
0.355
-
Suggested Pad Layout
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
1.5
0.059
DMN6068SE
Document Number DS32033 Rev. 2 - 2
2.3
0.091
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mm
inches
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ADVANCE INFORMATION
DMN6068SE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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DMN6068SE
Document Number DS32033 Rev. 2 - 2
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