LTC3858-2 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC ®3858-2 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency current mode architecture allows a phase-lockable frequency of up to 850kHz. Power loss and noise due to the input capacitor ESR are minimized by operating the two controller outputs out of phase. Low Operating IQ: 170μA (One Channel On) Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 24V Wide VIN Range: 4V to 38V RSENSE or DCR Current Sensing Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise OPTI-LOOP ® Compensation Minimizes COUT Phase-Lockable Frequency (75kHz-850kHz) Programmable Fixed Frequency (50kHz-900kHz) Selectable Continuous, Pulse-Skipping or Burst Mode ® Operation at Light Loads Very Low Dropout Operation: 99% Duty Cycle Adjustable Output Voltage Soft-Start or Tracking Power Good Output Voltage Monitor Low Shutdown IQ: 8μA Internal LDO Powers Gate Drive from VIN or EXTVCC No Current Foldback During Start-Up 5mm × 5mm QFN Package The 170μA no-load quiescent current extends operating life in battery-powered systems. OPTI-LOOP compensation allows the transient response to be optimized over a wide range of output capacitance and ESR values. The LTC3858-2 differs from the LTC3858 by having the overvoltage protection crowbar and short-circuit latchoff disabled. A wide 4V to 38V input supply range encompasses a wide range of intermediate bus voltages and battery chemistries. Independent soft-start pins for each controller ramp the output voltages during start-up. Current foldback limits MOSFET heat dissipation during short-circuit conditions. APPLICATIONS n n n L, LT, LTC, LTM, Burst Mode, OPTI-LOOP, μModule, PolyPhase, Linear Technology and the Linear logo are registered trademarks and No RSENSE and UltraFast are trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents, including 5481178, 5705919, 5929620, 6100678, 6144194, 6177787, 6304066, 6580258. Automotive Systems Battery Operated Digital Devices Distributed DC Power Systems TYPICAL APPLICATION High Efficiency Dual 8.5V/3.3V Step-Down Converter 22μF 50V 4.7μF VIN SW2 BG1 BG2 7.2μH PGND SENSE1+ SENSE2+ SENSE1– SENSE2– 62.5k 150μF 680pF 20k 15k SS1 0.1μF VFB2 ITH2 SGND 193k 680pF SS2 0.1μF 60 100 POWER LOSS 50 10 40 20 0.01Ω VFB1 ITH1 1000 EFFICIENCY 70 30 0.007Ω VOUT1 3.3V 5A EFFICIENCY (%) SW1 80 0.1μF 20k VOUT2 8.5V 3.5A 150μF VIN = 12V VOUT = 3.3V FIGURE 13 CIRCUIT 10 0 0.0001 0.001 0.01 0.1 1 OUTPUT CURRENT (A) POWER LOSS (mW) BOOST2 LTC3858-2 10000 90 TG2 BOOST1 3.3μH 100 INTVCC TG1 0.1μF Efficiency and Power Loss vs Load Current VIN 9V TO 38V 1 0.1 10 38582 TA01b 15k 38582 TA01a 38582f 1 LTC3858-2 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Note 1) SW1 TG1 PGOOD1 ILIM SS1 ITH1 VFB1 SENSE1+ TOP VIEW 32 31 30 29 28 27 26 25 SENSE1– 1 24 BOOST1 23 BG1 FREQ 2 22 VIN PHASMD 3 CLKOUT 4 21 PGND 33 SGND PLLIN/MODE 5 20 EXTVCC SGND 6 19 INTVCC RUN1 7 18 BG2 RUN2 8 17 BOOST2 SW2 TG2 PGOOD2 SS2 ITH2 VFB2 SENSE2– 9 10 11 12 13 14 15 16 SENSE2+ Input Supply Voltage (VIN) ......................... –0.3V to 40V Topside Driver Voltages BOOST1, BOOST2 ................................. –0.3V to 46V Switch Voltage (SW1, SW2) ......................... –5V to 40V (BOOST1-SW1), (BOOST2-SW2) ................ –0.3V to 6V RUN1, RUN2 ............................................... –0.3V to 8V Maximum Current Sourced into Pin from Source >8V ..............................................100μA SENSE1+, SENSE2+, SENSE1– SENSE2– Voltages ..................................... –0.3V to 28V PLLIN/MODE Voltage ................................... –0.3V to 6V ILIM, PHASMD, FREQ Voltages ............. –0.3V to INTVCC EXTVCC ..................................................... –0.3V to 14V ITH1, ITH2,VFB1, VFB2 Voltages....................... –0.3V to 6V PGOOD1, PGOOD2 Voltages ....................... –0.3V to 6V SS1, SS2, INTVCC Voltages ......................... –0.3V to 6V Operating Junction Temperature Range (Note 2).................................................. –40°C to 125°C Maximum Junction Temperature (Note 3) ............ 125°C Storage Temperature Range .................. –65°C to 150°C UH PACKAGE 32-LEAD (5mm s 5mm) PLASTIC QFN TJMAX = 125°C, θJA = 34°C/W EXPOSED PAD (PIN 33) IS SGND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC3858EUH-2#PBF LTC3858EUH-2#TRPBF 38582 32-Lead (5mm × 5mm) Plastic QFN –40°C to 125°C LTC3858IUH-2#PBF LTC3858IUH-2#TRPBF 38582 32-Lead (5mm × 5mm) Plastic QFN –40°C to 125°C Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 12V, VRUN1,2 = 5V, EXTVCC = 0V unless otherwise noted. SYMBOL PARAMETER VIN Input Supply Operating Voltage Range VFB1,2 Regulated Feedback Voltage CONDITIONS MIN TYP 4 (Note 4) ITH1,2 = 1.2V –40°C to 125°C –40°C to 85°C IFB1,2 Feedback Current (Note 4) VREFLNREG Reference Voltage Line Regulation (Note 4) VIN = 4.5V to 38V l 0.788 0.792 MAX UNITS 38 V 0.800 0.800 0.812 0.808 V V ±5 ±50 nA 0.002 0.02 %/V 38582f 2 LTC3858-2 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 12V, VRUN1,2 = 5V, EXTVCC = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS VLOADREG Output Voltage Load Regulation (Note 4) Measured in Servo Loop, ΔITH Voltage = 1.2V to 0.7V (Note 4) Measured in Servo Loop, ΔITH Voltage = 1.2V to 2V gm1,2 Transconductance Amplifier gm (Note 4) ITH1,2 = 1.2V, Sink/Source = 5μA IQ Input DC Supply Current (Note 5) MIN TYP MAX l 0.01 0.1 % l –0.01 –0.1 % 2 Pulse-Skipping or Forced Continuous RUN1 = 5V and RUN2 = 0V, VFB1 = 0.83V (No Load) or RUN1 = 0V and RUN2 = 5V, VFB2 = 0.83V (No Load) Mode (One Channel On) Pulse-Skipping or Forced Continuous RUN1,2 = 5V, VFB1,2 = 0.83V (No Load) Mode (Both Channels On) UVLO mmho 1.3 mA 2 mA Sleep Mode (One Channel On) RUN1 = 5V and RUN2 = 0V, VFB1 = 0.83V (No Load) or RUN1 = 0V and RUN2 = 5V, VFB2 = 0.83V (No Load) 170 250 μA Sleep Mode (Both Channels On) RUN1,2 = 5V, VFB1,2 = 0.83V (No Load) 300 450 μA Shutdown RUN1,2 = 0V Undervoltage Lockout INTVCC Ramping Up INTVCC Ramping Down VOVL Feedback Overvoltage Protection Measured at VFB1,2, Relative to Regulated VFB1,2 ISENSE+ SENSE+ Pins Current Each Channel ISENSE– SENSE– Pins Current Each Channel VOUT1,2 < INTVCC – 0.5V VOUT1,2 > INTVCC + 0.5V l l 8 20 μA 3.6 4.0 3.8 4.2 4 V V 7 10 13 % ±1 μA ±1 550 μA μA % DFMAX Maximum Duty Factor In Dropout, FREQ = 0V 98 99 ISS1,2 Soft-Start Charge Current VSS1,2 = 0V 0.7 1.0 1.4 VRUN1,2 On RUN Pin On Threshold Voltage VRUN1, VRUN2 Rising 1.21 1.26 1.31 l VRUN1,2 Hyst RUN Pin Hysteresis Voltage VSENSE(MAX) UNITS Maximum Current Sense Threshold Voltage 50 VFB1,2 = 0.7V, VSENSE1–,2– = 3.3V, ILIM = 0 VFB1,2 = 0.7V, VSENSE1–,2– = 3.3V, ILIM = FLOAT VFB1,2 = 0.7V, VSENSE1–,2– = 3.3V, ILIM = INTVCC l l l 22 43 64 30 50 75 μA V mV 36 57 86 mV mV mV Gate Driver TG1,2 Pull-Up On-Resistance Pull-Down On-Resistance 2.5 1.5 Ω Ω BG1,2 Pull-Up On-Resistance Pull-Down On-Resistance 2.4 1.1 Ω Ω TG1,2 tr TG1,2 tf TG Transition Time: Rise Time Fall Time (Note 6) CLOAD = 3300pF CLOAD = 3300pF 25 16 ns ns BG1,2 tr BG1,2 tf BG Transition Time: Rise Time Fall Time (Note 6) CLOAD = 3300pF CLOAD = 3300pF 28 13 ns ns TG/BG t1D Top Gate Off to Bottom Gate On Delay CLOAD = 3300pF Each Driver Synchronous Switch-On Delay Time 30 ns BG/TG t1D Bottom Gate Off to Top Gate On Delay CLOAD = 3300pF Each Driver Top Switch-On Delay Time 30 ns tON(MIN) Minimum On-Time 95 ns (Note 7) 38582f 3 LTC3858-2 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 12V, VRUN1,2 = 5V, EXTVCC = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS 4.85 5.1 5.35 V 0.7 1.1 % INTVCC Linear Regulator VINTVCCVIN Internal VCC Voltage 6V < VIN < 38V, VEXTVCC = 0V VLDOVIN INTVCC Load Regulation ICC = 0mA to 50mA, VEXTVCC = 0V VINTVCCEXT Internal VCC Voltage 6V < VEXTVCC < 13V VLDOEXT INTVCC Load Regulation ICC = 0mA to 50mA, VEXTVCC = 8.5V VEXTVCC EXTVCC Switchover Voltage EXTVCC Ramping Positive VLDOHYS EXTVCC Hysteresis Voltage 4.85 4.5 5.1 5.35 V 0.6 1.1 % 4.7 4.9 250 V mV Oscillator and Phase-Locked Loop f25kΩ Programmable Frequency RFREQ = 25k, PLLIN/MODE = DC Voltage f65kΩ Programmable Frequency RFREQ = 65k, PLLIN/MODE = DC Voltage f105kΩ Programmable Frequency RFREQ = 105k, PLLIN/MODE = DC Voltage 105 375 440 kHz 505 835 kHz kHz fLOW Low Fixed Frequency VFREQ = 0V, PLLIN/MODE = DC Voltage 320 350 380 kHz fHIGH High Fixed Frequency VFREQ = INTVCC, PLLIN/MODE = DC Voltage 485 535 585 kHz fSYNC Synchronizable Frequency PLLIN/MODE = External Clock 850 kHz 0.4 V ±1 μA l 75 PGOOD1 and PGOOD2 Outputs VPGL PGOOD Voltage Low IPGOOD PGOOD Leakage Current VPGOOD = 5V VPG PGOOD Trip Level VFB with Respect to Set Regulated Voltage VFB Ramping Negative Hysteresis –13 –10 2.5 –7 % % VFB with Respect to Set Regulated Voltage VFB Ramping Positive Hysteresis 7 10 2.5 13 % % tPG IPGOOD = 2mA Delay for Reporting a Fault (PGOOD Low) Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Ratings for extended periods may affect device reliability and lifetime. Note 2: The LTC3858-2 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3858E-2 is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3858I-2 is guaranteed over the full –40°C to 125°C operating junction temperature range. Note that the maximum ambient temperature is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. 0.2 25 μs Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: TJ = TA + (PD • 34°C/W) Note 4: The LTC3858-2 is tested in a feedback loop that servos VITH1,2 to a specified voltage and measures the resultant VFB1,2. The specification at 85°C is not tested in production. This specification is assured by design, characterization and correlation to production testing at 125°C. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See the Applications information section. Note 6: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels Note 7: The minimum on-time condition is specified for an inductor peak-to-peak ripple current ≥ of 40% IMAX (See Minimum On-Time Considerations in the Applications Information section). 38582f 4 LTC3858-2 TYPICAL PERFORMANCE CHARACTERISTICS Efficiency and Power Loss vs Output Current 10000 1000 100 30 20 10 0 0.0001 Burst Mode OPERATION 10 PULSESKIPPING MODE 1 FORCED CONTINUOUS MODE 0.1 0.001 0.01 0.1 1 10 OUTPUT CURRENT (A) EFFICIENCY (%) 60 80 98 94 70 VIN = 12V 60 50 40 30 10 VOUT = 3.3V FIGURE 13 CIRCUIT 0.001 0.01 0.1 1 OUTPUT CURRENT (A) 38582 G01 38582 G04 Inductor Current at Light Load 86 82 80 0 5 10 15 20 25 30 INPUT VOLTAGE (V) 35 40 38582 G03 Load Step (Forced Continuous Mode) Load Step (Pulse-Skipping Mode) VOUT 100mV/DIV ACCOUPLED IL 2A/DIV IL 2A/DIV VOUT = 3.3V 20μs/DIV FIGURE 13 CIRCUIT 88 10 VOUT 100mV/DIV ACCOUPLED IL 2A/DIV 90 38582 G02 Load Step (Burst Mode Operation) VOUT 100mV/DIV ACCOUPLED 92 84 20 0 0.0001 FIGURE 13 CIRCUIT VOUT = 3.3V IOUT = 4A 96 VIN = 5V EFFICIENCY (%) 90 70 40 100 POWER LOSS (mW) EFFICIENCY (%) FIGURE 13 CIRCUIT 90 VIN = 12V VOUT = 3.3V 80 50 Efficiency vs Input Voltage Efficiency vs Output Current 100 20μs/DIV VOUT = 3.3V FIGURE 13 CIRCUIT 38585 G05 38582 G06 VOUT = 3.3V 20μs/DIV FIGURE 13 CIRCUIT Tracking Start-Up Soft-Start FORCED CONTINUOUS MODE VOUT2 2V/DIV VOUT2 2V/DIV Burst Mode OPERATION 2A/DIV VOUT1 2V/DIV VOUT1 2V/DIV PULSESKIPPING MODE VOUT = 3.3V 2μs/DIV ILOAD = 200μA FIGURE 13 CIRCUIT 38582 G07 20ms/DIV FIGURE 13 CIRCUIT 38582 G08 20ms/DIV FIGURE 13 CIRCUIT 38572 G09 38582f 5 LTC3858-2 TYPICAL PERFORMANCE CHARACTERISTICS Total Input Supply Current vs Input Voltage 300μA LOAD 250 200 NO LOAD 150 100 50 30 25 20 INPUT VOLTAGE (V) 10 15 35 INTVCC 5.0 EXTVCC RISING 4.8 EXTVCC FALLING 4.6 40 5.0 80 55 30 TEMPERATURE (°C) 5 ILIM = GND ILIM = FLOAT ILIM = INTVCC –150 –200 –250 –300 –350 –400 –450 –500 –20 5% DUTY CYCLE 0 0.2 0.4 0.6 0.8 1.0 ITH PIN VOLTAGE 1.2 –550 –600 1.4 0 QUIESCENT CURRENT (μA) MAXIMUM CURRENT SENSE VOLTAGE (mV) 210 60 ILIM = FLOAT 50 40 ILIM = GND 30 60 ILIM = FLOAT 40 ILIM = GND 20 20 0 10 20 30 40 50 60 70 80 90 100 DUTY CYCLE (%) Shutdown Current vs Temperature Quiescent Current vs Temperature ILIM = INTVCC 40 38582 G15 230 90 35 ILIM = INTVCC 38582 G14 Foldback Current Limit 70 15 20 25 30 INPUT VOLTAGE (V) 80 0 25 10 15 20 5 VSENSE COMMON MODE VOLTAGE (V) 38582 G13 80 10 38582 G12 MAXIMUM CURRENT SENSE VOLTAGE (mV) –100 SENSE– CURRENT (μA) CURRENT SENSE THRESHOLD (mV) –50 20 5 Maximum Current Sense Threshold vs Duty Cycle 0 PULSE-SKIPPING FORCED CONTINUOUS Burst Mode OPERATION (FALLING) Burst Mode OPERATION (RISING) –40 0 130 SENSE– Pin Input Bias Current 80 0 105 38582 G11 Maximum Current Sense Voltage vs ITH Voltage 40 5.1 4.2 38582 G10 60 5.2 5.1 4.4 4.0 –45 –20 0 5 5.2 10 PLLIN/MODE = 0 VIN = 12V VOUT = 3.3V ONE CHANNEL ON SHUTDOWN CURRENT (μA) SUPPLY CURRENT (μA) 300 5.4 INTVCC VOLTAGE (V) FIGURE 12 CIRCUIT VOUT = 3.3V ONE CHANNEL ON 350 INTVCC Line Regulation 5.2 5.6 EXTVCC AND INTVCC VOLTAGE (V) 400 EXTVCC Switchover and INTVCC Voltages vs Temperature 190 170 150 9 8 7 6 5 130 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FEEDBACK VOLTAGE (V) 38582 G16 110 –45 –20 80 5 55 30 TEMPERATURE (°C) 105 130 38582 G17 4 –45 –20 55 30 80 5 TEMPERATURE (°C) 105 130 38582 G18 38582f 6 LTC3858-2 TYPICAL PERFORMANCE CHARACTERISTICS Soft-Start Pull-Up Current vs Temperature REGULATED FEEDBACK VOLTAGE (mV) 1.35 1.15 1.30 1.10 RUN PIN VOLTAGE (V) SS PULL-UP CURRENT (μA) 808 1.40 1.20 1.05 1.00 0.95 0.90 1.25 1.20 1.15 1.10 1.05 1.00 0.85 0.95 0.80 –45 –20 80 55 30 TEMPERATURE (°C) 5 105 0.90 –45 130 –20 55 30 5 80 TEMPERATURE (°C) 38582 G19 798 796 794 800 12 700 600 10 8 6 4 105 FREQ = INTVCC 500 FREQ = GND 400 300 100 5 130 10 25 20 30 15 INPUT VOLTAGE (V) 35 0 –45 –20 40 80 55 30 TEMPERATURE (°C) 5 105 Undervoltage Lockout Threshold vs Temperature INTVCC vs Load Current 5.50 4.4 FREQ = GND 130 38582 G24 38582 G23 Oscillator Frequency vs Input Voltage 130 200 0 105 80 55 30 TEMPERATURE (°C) 5 Oscillator Frequency vs Temperature 14 38582 G22 356 800 38582 G21 2 VOUT = 28V 80 5 55 30 TEMPERATURE (°C) 802 792 –45 –20 130 FREQUENCY (kHz) VOUT = 3.3V –20 804 Shutdown Input Current vs Input Voltage INPUT CURRENT (μA) SENSE– CURRENT (μA) 50 0 –50 –100 –150 –200 –250 –300 –350 –400 –450 –500 –550 –600 –45 105 806 38582 G20 SENSE– Pin Input Current vs Temperature VIN = 12V 4.3 354 5.25 4.2 352 350 348 EXTVCC = 0V INTVCC VOLTAGE (V) INTVCC VOLTAGE (V) OSCILLATOR FREQUENCY (kHz) Regulated Feedback Voltage vs Temperature Shutdown (RUN) Threshold vs Temperature 4.1 4.0 3.9 3.8 3.7 3.6 346 5.00 EXTVCC = 8.5V 4.75 EXTVCC = 5V 4.50 4.25 3.5 344 5 10 25 20 30 15 INPUT VOLTAGE (V) 35 40 38582 G25 3.4 –45 4.00 –20 55 30 5 80 TEMPERATURE (°C) 105 130 38582 G26 0 20 60 80 40 LOAD CURRENT (mA) 100 38582 G27 38582f 7 LTC3858-2 PIN FUNCTIONS SENSE1–, SENSE2– (Pin 1, Pin 9): The (–) Input to the Differential Current Comparators. When greater than INTVCC – 0.5V, the SENSE– pin supplies current to the current comparator. FREQ (Pin 2): The Frequency Control Pin for the Internal Voltage-Controlled Oscillator (VCO). Connecting this pin to GND forces the VCO to a fixed low frequency of 350kHz. Connecting this pin to INTVCC forces the VCO to a fixed high frequency of 535kHz. Other frequencies between 50kHz and 900kHz can be programmed using a resistor between FREQ and GND. An internal 20μA pull-up current develops the voltage to be used by the VCO to control the frequency PHASMD (Pin 3): Control input to phase selector which determines the phase relationships between controller 1, controller 2 and the CLKOUT signal. Pulling this pin to ground forces TG2 and CLKOUT to be out of phase 180° and 60° with respect to TG1. Connecting this pin to INTVCC forces TG2 and CLKOUT to be out of phase 240° and 120° with respect to TG1. Floating this pin forces TG2 and CLKOUT to be out of phase 180° and 90° with respect to TG1. Refer to the Table 1. CLKOUT (Pin 4): Output clock signal available to daisychain other controller ICs for additional MOSFET driver stages/phases. The output levels swing from INTVCC to ground. PLLIN/MODE (Pin 5): External Synchronization Input to Phase Detector and Forced Continuous Mode Input. When an external clock is applied to this pin, the phase-locked loop will force the rising TG1 signal to be synchronized with the rising edge of the external clock. When not synchronizing to an external clock, this input, which acts on both controllers, determines how the LTC3858-2 operates at light loads. Pulling this pin to ground selects Burst Mode operation. An internal 100k resistor to ground also invokes Burst Mode operation when the pin is floated. Tying this pin to INTVCC forces continuous inductor current operation. Tying this pin to a voltage greater than 1.2V and less than INTVCC – 1.3V selects pulse-skipping operation. SGND (Pin 6, Exposed Pad Pin 33): Small-signal ground common to both controllers, must be routed separately from high current grounds to the common (–) terminals of the CIN capacitors. The exposed pad must be soldered to the PCB for rated thermal performance. RUN1, RUN2 (Pin 7, Pin 8): Digital Run Control Inputs for Each Controller. Forcing either of these pins below 1.2V shuts down that controller. Forcing both of these pins below 0.7V shuts down the entire LTC3858-2, reducing quiescent current to approximately 8μA. ILIM (Pin 28): Current Comparator Sense Voltage Range Inputs. Tying this pin to SGND, FLOAT or INTVCC sets the maximum current sense threshold to one of three different levels for both comparators. 38582f 8 LTC3858-2 PIN FUNCTIONS INTVCC (Pin 19): Output of the Internal Linear Low Dropout Regulator. The driver and control circuits are powered from this voltage source. Must be decoupled to power ground with a minimum of 4.7μF ceramic or other low ESR capacitor. Do not use the INTVCC pin for any other purpose. EXTVCC (Pin 20): External Power Input to an Internal LDO Connected to INTVCC. This LDO supplies INTVCC power, bypassing the internal LDO powered from VIN whenever EXTVCC is higher than 4.7V. See EXTVCC Connection in the Applications Information section. Do not exceed 14V on this pin. PGND (Pin 21): Driver Power Ground. Connects to the sources of bottom (synchronous) N-channel MOSFETs and the (–) terminal(s) of CIN. VIN (Pin 22): Main Input Supply Pin. A bypass capacitor should be tied between this pin and the signal ground pin. BG1, BG2 (Pin 23, Pin 18): High Current Gate Drives for Bottom (Synchronous) N-Channel MOSFETs. Voltage swing at these pins is from ground to INTVCC. BOOST1, BOOST2 (Pin 24, Pin 17): Bootstrapped Supplies to the Topside Floating Drivers. Capacitors are connected between the BOOST and SW pins and Schottky diodes are tied between the BOOST and INTVCC pins. Voltage swing at the BOOST pins is from INTVCC to (VIN + INTVCC). SW1, SW2 (Pin 25, Pin 16): Switch Node Connections to Inductors. TG1, TG2 (Pin 26, Pin 15): High Current Gate Drives for Top N-Channel MOSFETs. These are the outputs of floating drivers with a voltage swing equal to INTVCC – 0.5V superimposed on the switch node voltage SW. PGOOD1, PGOOD2 (Pin 27, Pin 14): Open-Drain Logic Output. PGOOD1,2 is pulled to ground when the voltage on the VFB1,2 pin is not within ±10% of its set point. SS1, SS2 (Pin 29, Pin 13): External Soft-Start Input. The LTC3858-2 regulates the VFB1,2 voltage to the smaller of 0.8V or the voltage on the SS1,2 pin. An internal 1μA pullup current source is connected to this pin. A capacitor to ground at this pin sets the ramp time to final regulated output voltage. Alternatively, a resistor divider on another voltage supply connected to this pin allows the LTC3858-2 output to track the other supply during start-up. ITH1, ITH2 (Pin 30, Pin 12): Error Amplifier Outputs and Switching Regulator Compensation Points. Each associated channel’s current comparator trip point increases with this control voltage. VFB1, VFB2 (Pin 31, Pin 11): Receives the remotely sensed feedback voltage for each controller from an external resistive divider across the output. SENSE1+, SENSE2+ (Pin 32, Pin 10): The (+) Input to the differential current comparators that are normally connected to inductor DCR sensing networks or current sensing resistors. The ITH pin voltage and controlled offsets between the SENSE– and SENSE+ pins in conjunction with RSENSE set the current trip threshold. 38582f 9 4.7V 20 EXTVCC 22 VIN 28 ILIM 5 PLLIN/MODE 2 FREQ + – PGOOD2 14 100k 20μA LDO EN 5.1V 0.88V 6 SGND CLP 19 INTVCC 5.1V LDO EN PFD CLK1 CLK2 4 3 VCO CLKOUT PHASMD CURRENT LIMIT SYNC DET 0.72V VFB2 0.72V VFB1 0.88V 11V 0.5μA RUN 7, 8 ICMP SHDN RST 2(VFB) SLOPE COMP 2.7V 0.55V Q Q BOT +– 3mV OV IR SLEEP SHDN TOP ON FOLDBACK –+ 0.425V R S DROP OUT DET TOP EA SHDN INTVCC 0.88V 1μA 0.80V TRACK/SS SWITCH LOGIC BOT – + – – + – + PGOOD1 27 + + – + + – – + – + 10 – DUPLICATE FOR SECOND CONTROLLER CHANNEL SS 29, 13 ITH 30, 12 VFB 31, 11 SENSE– 1, 9 SENSE+ 32, 10 21 PGND BG 23, 18 SW 25, 16 TG 26, 15 BOOST 24, 17 38582 FD CSS CC2 CC RA L VIN RB CB DB INTVCC RC D RSENSE COUT CIN VOUT LTC3858-2 FUNCTIONAL DIAGRAM 38582f LTC3858-2 OPERATION (Refer to the Functional Diagram) Table 1 summarizes the differences between the LTC3858-2 and its sister parts, the LTC3858 and LTC3858-1. The LTC3858-2 uses a constant frequency, current mode step-down architecture with the two controller channels operating 180 degrees out of phase. During normal operation, each external top MOSFET is turned on when the clock for that channel sets the RS latch, and is turned off when the main current comparator, ICMP, resets the RS latch. The peak inductor current at which ICMP trips and resets the latch is controlled by the voltage on the ITH pin, which is the output of the error amplifier, EA. The error amplifier compares the output voltage feedback signal at the VFB pin (which is generated with an external resistor divider connected across the output voltage, VOUT , to ground) to the internal 0.800V reference voltage. When the load current increases, it causes a slight decrease in VFB relative to the reference, which causes the EA to increase the ITH voltage until the average inductor current matches the new load current. After the top MOSFET is turned off each cycle, the bottom MOSFET is turned on until either the inductor current starts to reverse, as indicated by the current comparator IR, or the beginning of the next clock cycle. INTVCC/EXTVCC Power Power for the top and bottom MOSFET drivers and most other internal circuitry is derived from the INTVCC pin. When the EXTVCC pin is left open or tied to a voltage less than 4.7V, the VIN LDO (low dropout linear regulator) supplies 5.1V from VIN to INTVCC. If EXTVCC is taken above 4.7V, the VIN LDO is turned off and the EXTVCC LDO is turned on. Once enabled, the EXTVCC LDO supplies 5.1V from EXTVCC to INTVCC. Using the EXTVCC pin allows the INTVCC power to be derived from a high efficiency external source such as one of the LTC3858-2 switching regulator outputs. Each top MOSFET driver is biased from the floating bootstrap capacitor, CB, which normally recharges during each switching cycle through an external diode when the top MOSFET turns off. If the input voltage, VIN, decreases to a voltage close to VOUT , the loop may enter dropout and attempt to turn on the top MOSFET continuously. The dropout detector detects this and forces the top MOSFET off for about one-twelfth of the clock period every tenth cycle to allow CB to recharge. Table 1. Summary of the Differences Between LTC3858, LTC3858-1 and LTC3858-2 LTC3858 LTC3858-1 LTC3858-2 Yes, But Can Be Defeated Yes, But Can Be Defeated Not Present BG Forced On (Bottom MOSFET “Crowbar”) No BG Forced On (Bottom MOSFET “Crowbar”) No BG Not Forced On (Behavior Depends on Light Load Mode) Yes Independent PGOOD1 and PGOOD2 Pins? Yes No, PGOOD1 Only Yes CLKOUT/PHASMD Pins for PolyPhase Yes No Yes Short-Circuit Latchoff Feature? Overvoltage Protection Optional Tracking Start-Up? Adjustable Current Limit (ILIM Pin) Package Yes No Yes 5mm × 5mm QFN 4mm × 5mm QFN and Narrow SSOP 5mm × 5mm QFN 38582f 11 LTC3858-2 OPERATION (Refer to the Functional Diagram) Shutdown and Start-Up (RUN1, RUN2 and SS1, SS2 Pins) The two channels of the LTC3858-2 can be independently shut down using the RUN1 and RUN2 pins. Pulling either of these pins below 1.26V shuts down the main control loop for that controller. Pulling both pins below 0.7V disables both controllers and most internal circuits, including the INTVCC LDOs. In this state, the LTC3858-2 draws only 8μA of quiescent current. The RUN pin may be externally pulled up or driven directly by logic. When driving the RUN pin with a low impedance source, do not exceed the absolute maximum rating of 8V. The RUN pin has an internal 11V voltage clamp that allows the RUN pin to be connected through a resistor to a higher voltage (for example, VIN), so long as the maximum current into the RUN pin does not exceed 100μA. The start-up of each controller’s output voltage, VOUT , is controlled by the voltage on the SS pin for that channel. When the voltage on the SS pin is less than the 0.8V internal reference, the LTC3858-2 regulates the VFB voltage to the SS pin voltage instead of the 0.8V reference. This allows the SS pin to be used to program a soft-start by connecting an external capacitor from the SS pin to SGND. An internal 1μA pull-up current charges this capacitor creating a voltage ramp on the SS pin. As the SS voltage rises linearly from 0V to 0.8V (and beyond up to the absolute maximum rating of 6V), the output voltage VOUT rises smoothly from zero to its final value. Alternatively, the SS pin can be used to cause the startup of VOUT to track that of another supply. Typically, this requires connecting to the SS pin an external resistor divider from the other supply to ground (see the Applications Information section). Light Load Current Operation (Burst Mode Operation, Pulse-Skipping or Forced Continuous) (PLLIN/MODE Pin) The LTC3858-2 can be enabled to enter high efficiency Burst Mode operation, constant frequency pulse-skipping mode, or forced continuous conduction mode at low load currents. To select Burst Mode operation, tie the PLLIN/ MODE pin to ground. To select forced continuous operation, tie the PLLIN/MODE pin to INTVCC. To select pulse-skipping mode, tie the PLLIN/MODE pin to a DC voltage greater than 1.2V and less than INTVCC – 1.3V. When a controller is enabled for Burst Mode operation, the minimum peak current in the inductor is set to approximately 30% of the maximum sense voltage even though the voltage on the ITH pin indicates a lower value. If the average inductor current is higher than the load current, the error amplifier EA will decrease the voltage on the ITH pin. When the ITH voltage drops below 0.425V, the internal sleep signal goes high (enabling “sleep” mode) and both external MOSFETs are turned off. In sleep mode, much of the internal circuitry is turned off, reducing the quiescent current. If one channel is shut down and the other channel is in sleep mode, the LTC3858-2 draws only 170μA of quiescent current. If both channels are in sleep mode, the LTC3858-2 draws only 300μA of quiescent current. In sleep mode, the load current is supplied by the output capacitor. As the output voltage decreases, the EA’s output begins to rise. When the output voltage drops enough, the ITH pin is reconnected to the output of the EA, the sleep signal goes low, and the controller resumes normal operation by turning on the top external MOSFET on the next cycle of the internal oscillator. When a controller is enabled for Burst Mode operation, the inductor current is not allowed to reverse. The reverse current comparator, IR, turns off the bottom external MOSFET just before the inductor current reaches zero, preventing it from reversing and going negative. Thus, the controller is in discontinuous operation. 38582f 12 LTC3858-2 OPERATION (Refer to the Functional Diagram) In forced continuous operation or when clocked by an external clock source to use the phase-locked loop (see the Frequency Selection and Phase-Locked Loop section), the inductor current is allowed to reverse at light loads or under large transient conditions. The peak inductor current is determined by the voltage on the ITH pin, just as in normal operation. In this mode, the efficiency at light loads is lower than in Burst Mode operation. However, continuous operation has the advantages of lower output voltage ripple and less interference to audio circuitry. In forced continuous mode, the output ripple is independent of load current. When the PLLIN/MODE pin is connected for pulse-skipping mode, the LTC3858-2 operates in PWM pulse-skipping mode at light loads. In this mode, constant frequency operation is maintained down to approximately 1% of designed maximum output current. At very light loads, the current comparator, ICMP, may remain tripped for several cycles and force the external top MOSFET to stay off for the same number of cycles (i.e., skipping pulses). The inductor current is not allowed to reverse (discontinuous operation). This mode, like forced continuous operation, exhibits low output ripple as well as low audio noise and reduced RF interference when compared to Burst Mode operation. It provides higher light load efficiency than forced continuous mode, but not nearly as high as Burst Mode operation. Frequency Selection and Phase-Locked Loop (FREQ and PLLIN/MODE Pins) The selection of switching frequency is a trade-off between efficiency and component size. Low frequency operation increases efficiency by reducing MOSFET switching losses, but requires larger inductance and/or capacitance to maintain low output ripple voltage. The switching frequency of the LTC3858-2’s controllers can be selected using the FREQ pin. If the PLLIN/MODE pin is not being driven by an external clock source, the FREQ pin can be tied to SGND, tied to INTVCC or programmed through an external resistor. Tying FREQ to SGND selects 350kHz while tying FREQ to INTVCC selects 535kHz. Placing a resistor between FREQ and SGND allows the frequency to be programmed between 50kHz and 900kHz, as shown in Figure 10. A phase-locked loop (PLL) is available on the LTC3858-2 to synchronize the internal oscillator to an external clock source that is connected to the PLLIN/MODE pin. The phase detector adjusts the voltage (through an internal lowpass filter) of the VCO input to align the turn-on of controller 1’s external top MOSFET to the rising edge of the synchronizing signal. Thus, the turn-on of controller 2’s external top MOSFET is 180 degrees out of phase to the rising edge of the external clock source. The VCO input voltage is pre-biased to the operating frequency set by the FREQ pin before the external clock is applied. If prebiased near the external clock frequency, the PLL loop only needs to make slight changes to the VCO input in order to synchronize the rising edge of the external clock’s to the rising edge of TG1. The ability to pre-bias the loop filter allows the PLL to lock-in rapidly without deviating far from the desired frequency. The typical capture range of the phase-locked loop is from approximately 55kHz to 1MHz, with a guarantee over all manufacturing variations to be between 75kHz and 850kHz. In other words, the LTC3858-2’s PLL is guaranteed to lock to an external clock source whose frequency is between 75kHz and 850kHz. The typical input clock thresholds on the PLLIN/MODE pin are 1.6V (rising) and 1.1V (falling). 38582f 13 LTC3858-2 OPERATION (Refer to the Functional Diagram) PolyPhase® Applications (CLKOUT and PHASMD Pins) The LTC3858-2 features two pins (CLKOUT and PHASMD) that allow other controller ICs to be daisy-chained with the LTC3858-2 in PolyPhase applications. The clock output signal on the CLKOUT pin can be used to synchronize additional power stages in a multiphase power supply solution feeding a single, high current output or multiple separate outputs. The PHASMD pin is used to adjust the phase of the CLKOUT signal as well as the relative phases between the two internal controllers, as summarized in Table 2. The phases are calculated relative to the zero degrees phase being defined as the rising edge of the top gate driver output of controller 1 (TG1). The CLKOUT pin swings from ground to INTVCC with a pull-down impedance of 120Ω and a pull-up impedance of 150Ω. Table 2 VPHASMD CONTROLLER 2-PHASE CLKOUT PHASE GND 180° 60° Floating 180° 90° INTVCC 240° 120° Output Overvoltage Protection An overvoltage (OV) comparator guards against transient overshoots as well as other more serious conditions that may overvoltage the output. When the VFB pin rises by more than 10% above its regulation point of 0.800V, the top MOSFET is turned off until the overvoltage condition is cleared. The state of the bottom MOSFET during the overvoltage condition depends on the light load mode of operation, as selected by the PLLIN/MODE pin. In forced continuous mode, the bottom gate driver BG naturally turns on whenever the top gate driver TG is off, resulting in negative inductor current which discharges the output to (try to) bring it back into regulation. In pulse-skipping mode, BG is held off most of the time but is turned on for a brief pulse every ten clock cycles (for an effective BG-on duty cycle of ~1%) to refresh the BOOST-SW capacitor. This causes a slightly negative average inductor current which, in addition to whatever load current is present, may slowly discharge the output. In Burst Mode operation, BG is held off continuously, leaving only the load current to discharge the output to bring it back into regulation. Power Good (PGOOD1 and PGOOD2) Pins Each PGOOD pin is connected to an open drain of an internal N-channel MOSFET. The MOSFET turns on and pulls the PGOOD pin low when the corresponding VFB pin voltage is not within ±10% of the 0.8V reference voltage. The PGOOD pin is also pulled low when the corresponding RUN pin is low (shut down). When the VFB pin voltage is within the ±10% requirement, the MOSFET is turned off and the pin is allowed to be pulled up by an external resistor to a source no greater than 6V. Foldback Current When the output voltage falls to less than 70% of its nominal level, foldback current limiting is activated, progressively lowering the peak current limit in proportion to the severity of the overcurrent or short-circuit condition. Foldback current limiting is disabled during the soft-start interval (as long as the VFB voltage is keeping up with the TRACK/SS voltage). Theory and Benefits of 2-Phase Operation Why the need for 2-phase operation? Up until the 2-phase family, constant frequency dual switching regulators operated both channels in phase (i.e., single phase operation). This means that both switches turned on at the same time, causing current pulses of up to twice the amplitude of those for one regulator to be drawn from the input capacitor and battery. These large amplitude current pulses increased the total RMS current flowing from the input capacitor, requiring the use of more expensive input capacitors and increasing both EMI and losses in the input capacitor and battery. With 2-phase operation, the two channels of the dual switching regulator are operated 180 degrees out of phase. This effectively interleaves the current pulses drawn by the switches, greatly reducing the overlap time where they add together. The result is a significant reduction in total RMS input current, which in turn allows less expensive input capacitors to be used, reduces shielding requirements for EMI and improves real world operating efficiency. 38582f 14 LTC3858-2 OPERATION (Refer to the Functional Diagram) Figure 1 compares the input waveforms for a representative single-phase dual switching regulator to the LTC3858-2 2-phase dual switching regulator. An actual measurement of the RMS input current under these conditions shows that 2-phase operation dropped the input current from 2.53ARMS to 1.55ARMS. While this is an impressive reduction in itself, remember that the power losses are proportional to IRMS2, meaning that the actual power wasted is reduced by a factor of 2.66. The reduced input ripple voltage also means less power is lost in the input power path, which could include batteries, switches, trace/connector resistances and protection circuitry. Improvements in both conducted and radiated EMI also directly accrue as a result of the reduced RMS input current and voltage. Of course, the improvement afforded by 2-phase operation is a function of the dual switching regulator’s relative duty cycles which, in turn, are dependent upon the input voltage VIN (Duty Cycle = VOUT/VIN). Figure 2 shows how the RMS input current varies for single phase and 2-phase operation for 3.3V and 5V regulators over a wide input voltage range. It can readily be seen that the advantages of 2-phase operation are not just limited to a narrow operating range, for most applications is that 2-phase operation will reduce the input capacitor requirement to that for just one channel operating at maximum current and 50% duty cycle. 5V SWITCH 20V/DIV 3.3V SWITCH 20V/DIV INPUT CURRENT 5A/DIV INPUT VOLTAGE 500mV/DIV IIN(MEAS) = 2.53ARMS IIN(MEAS) = 1.55ARMS 38582 F01 Figure 1. Input Waveforms Comparing Single-Phase (a) and 2-Phase (b) Operation for Dual Switching Regulators Converting 12V to 5V and 3.3V at 3A Each. The Reduced Input Ripple with the 2-Phase Regulator Allows Less Expensive Input Capacitors, Reduces Shielding Requirements for EMI and Improves Efficiency 3.0 SINGLE PHASE DUAL CONTROLLER INPUT RMS CURRENT (A) 2.5 2.0 1.5 2-PHASE DUAL CONTROLLER 1.0 0.5 0 VO1 = 5V/3A VO2 = 3.3V/3A 0 10 20 30 INPUT VOLTAGE (V) 40 38582 F02 Figure 2. RMS Input Current Comparison 38582f 15 LTC3858-2 APPLICATIONS INFORMATION The Typical Application on the first page is a basic LTC3858-2 application circuit. LTC3858-2 can be configured to use either DCR (inductor resistance) sensing or low value resistor sensing. The choice between the two current sensing schemes is largely a design trade-off between cost, power consumption and accuracy. DCR sensing is becoming popular because it saves expensive current sensing resistors and is more power efficient, especially in high current applications. However, current sensing resistors provide the most accurate current limits for the controller. Other external component selection is driven by the load requirement, and begins with the selection of RSENSE (if RSENSE is used) and inductor value. Next, the power MOSFETs and Schottky diodes are selected. Finally, input and output capacitors are selected. Filter components mutual to the sense lines should be placed close to the LTC3858-2, and the sense lines should run close together to a Kelvin connection underneath the current sense element (shown in Figure 3). Sensing current elsewhere can effectively add parasitic inductance and capacitance to the current sense element, degrading the information at the sense terminals and making the programmed current limit unpredictable. If inductor DCR sensing is used (Figure 4b), resistor R1 should be placed close to the switching node, to prevent noise from coupling into sensitive small-signal nodes. TO SENSE FILTER, NEXT TO THE CONTROLLER COUT 3858 F03 Current Limit Programming The ILIM pin is a tri-level logic input which sets the maximum current limit of the converter. When ILIM is grounded, the maximum current limit threshold voltage of the current comparator is programmed to be 30mV. When ILIM is floated, the maximum current limit threshold is 50mV. When ILIM is tied to INTVCC, the maximum current limit threshold is set to 75mV. SENSE+ and SENSE– Pins The SENSE+ and SENSE– pins are the inputs to the current comparators. The common mode voltage range on these pins is 0V to 28V (Abs Max), enabling the LTC3858-2 to regulate output voltages up to a nominal 24V (allowing plenty of margin for tolerances and transients). The SENSE+ pin is high impedance over the full common mode range, drawing at most ±1μA. This high impedance allows the current comparators to be used in inductor DCR sensing. The impedance of the SENSE– pin changes depending on the common mode voltage. When SENSE– is less than INTVCC – 0.5V, a small current of less than 1μA flows out of the pin. When SENSE– is above INTVCC + 0.5V, a higher current (~550μA) flows into the pin. Between INTVCC – 0.5V and INTVCC + 0.5V, the current transitions from the smaller current to the higher current. INDUCTOR OR RSENSE Figure 3. Sense Lines Placement with Inductor or Sense Resistor Low Value Resistor Current Sensing A typical sensing circuit using a discrete resistor is shown in Figure 4a. RSENSE is chosen based on the required output current. The current comparator has a maximum threshold VSENSE(MAX) determined by the ILIM setting. The current comparator threshold voltage sets the peak of the inductor current, yielding a maximum average output current, IMAX, equal to the peak value less half the peak-to-peak ripple current, ΔIL. To calculate the sense resistor value, use the equation: RSENSE = VSENSE(MAX) ΔI IMAX + L 2 When using the controller in very low dropout conditions, the maximum output current level will be reduced due to the internal compensation required to meet stability criterion for buck regulators operating at greater than 50% duty factor. A curve is provided in the Typical Performance Characteristics section to estimate this reduction in peak output current depending upon the operating duty factor. 38582f 16 LTC3858-2 APPLICATIONS INFORMATION Inductor DCR Sensing For applications requiring the highest possible efficiency at high load currents, the LTC3850 is capable of sensing the voltage drop across the inductor DCR, as shown in Figure 4b. The DCR of the inductor represents the small amount of DC resistance of the copper wire, which can be less than 1mΩ for today’s low value, high current inductors. In a high current application requiring such an inductor, power loss through a sense resistor would cost several points of efficiency compared to inductor DCR sensing. If the external R1||R2 • C1 time constant is chosen to be exactly equal to the L/DCR time constant, the voltage drop across the external capacitor is equal to the drop across the inductor DCR multiplied by R2/(R1 + R2). R2 scales the voltage across the sense terminals for applications where the DCR is greater than the target sense resistor value. To properly dimension the external filter components, the DCR of the inductor must be known. It can be measured using a good RLC meter, but the DCR tolerance is not always the same and varies with temperature; consult the manufacturers’ data sheets for detailed information. Using the inductor ripple current value from the Inductor Value Calculation section, the target sense resistor value is: RSENSE(EQUIV) = VSENSE(MAX) ΔI IMAX + L 2 To ensure that the application will deliver full load current over the full operating temperature range, choose the minimum value for the Maximum Current Sense Threshold Voltage (VSENSE(MAX)) in the Electrical Characteristics table (30mV, 50mV or 75mV depending on the state of the ILIM pin). Next, determine the DCR of the inductor. When provided, use the manufacturer’s maximum value, usually given at 20°C. Increase this value to account for the temperature coefficient of copper, which is approximately 0.4%/°C. A conservative value for TL(MAX) is 100°C. To scale the maximum inductor DCR to the desired sense resistor (RD) value, use the divider ratio: RD = RSENSE(EQUIV) DCRMAX at TL(MAX) VIN INTVCC VIN BOOST BOOST INDUCTOR TG TG VIN INTVCC VIN RSENSE VOUT SW LTC3858-2 BG SENSE PLACE CAPACITOR NEAR SENSE PINS DCR VOUT R1 SENSE+ SENSE+ – L SW LTC3858-2 BG C1* R2 SENSE– SGND SGND 38582 F04a (4a) Using a Resistor to Sense Current *PLACE C1 NEAR SENSE PINS (R1||R2) t C1 = L DCR RSENSE(EQ) = DCR R2 R1 + R2 38582 F04b (4b) Using the Inductor DCR to Sense Current Figure 4. Current Sensing Methods 38582f 17 LTC3858-2 APPLICATIONS INFORMATION C1 is usually selected to be in the range of 0.1μF to 0.47μF. This forces R1||R2 to around 2k, reducing error that might have been caused by the SENSE+ pin’s ±1μA current. The equivalent resistance R1||R2 is scaled to the room temperature inductance and maximum DCR: R1|| R2 = L (DCR at 20°C) • C1 The sense resistor values are: R1= R1|| R2 R1• RD ; R2 = 1– RD RD The maximum power loss in R1 is related to duty cycle, and will occur in continuous mode at the maximum input voltage: PLOSS R1= ( VIN(MAX) – VOUT ) • VOUT R1 Ensure that R1 has a power rating higher than this value. If high efficiency is necessary at light loads, consider this power loss when deciding whether to use inductor DCR sensing or sense resistors. Light load power loss can be modestly higher with a DCR network than with a sense resistor, due to the extra switching losses incurred through R1. However, DCR sensing eliminates a sense resistor, reduces conduction losses and provides higher efficiency at heavy loads. Peak efficiency is about the same with either method. Inductor Value Calculation The operating frequency and inductor selection are interrelated in that higher operating frequencies allow the use of smaller inductor and capacitor values. So why would anyone ever choose to operate at lower frequencies with larger components? The answer is efficiency. A higher frequency generally results in lower efficiency because of MOSFET gate charge losses. In addition to this basic trade-off, the effect of inductor value on ripple current and low current operation must also be considered. The inductor value has a direct effect on ripple current. The inductor ripple current ΔIL decreases with higher inductance or higher frequency and increases with higher VIN: ΔIL = ⎛ V ⎞ 1 VOUT ⎜1– OUT ⎟ VIN ⎠ ( f) (L) ⎝ Accepting larger values of ΔIL allows the use of low inductances, but results in higher output voltage ripple and greater core losses. A reasonable starting point for setting ripple current is ΔIL = 0.3(IMAX). The maximum ΔIL occurs at the maximum input voltage. The inductor value also has secondary effects. The transition to Burst Mode operation begins when the average inductor current required results in a peak current below 30% of the current limit determined by RSENSE. Lower inductor values (higher ΔIL) will cause this to occur at lower load currents, which can cause a dip in efficiency in the upper range of low current operation. In Burst Mode operation, lower inductance values will cause the burst frequency to decrease. Inductor Core Selection Once the value for L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite or molypermalloy cores. Actual core loss is independent of core size for a fixed inductor value, but it is very dependent on inductance value selected. As inductance increases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core loss and are preferred for high switching frequencies, so design goals can concentrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that inductance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! 38582f 18 LTC3858-2 APPLICATIONS INFORMATION Power MOSFET and Schottky Diode (Optional) Selection Two external power MOSFETs must be selected for each controller in the LTC3858-2: one N-channel MOSFET for the top (main) switch, and one N-channel MOSFET for the bottom (synchronous) switch. The peak-to-peak drive levels are set by the INTVCC voltage. This voltage is typically 5.2V during start-up (see EXTVCC Pin Connection). Consequently, logic-level threshold MOSFETs must be used in most applications. The only exception is if low input voltage is expected (VIN < 4V); then, sub-logic level threshold MOSFETs (VGS(TH) < 3V) should be used. Pay close attention to the BVDSS specification for the MOSFETs as well; many of the logic-level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFETs include the on-resistance, RDS(ON), Miller capacitance, CMILLER, input voltage and maximum output current. Miller capacitance, CMILLER, can be approximated from the gate charge curve usually provided on the MOSFET manufacturers’ data sheet. CMILLER is equal to the increase in gate charge along the horizontal axis while the curve is approximately flat divided by the specified change in VDS. This result is then multiplied by the ratio of the application applied VDS to the gate charge curve specified VDS. When the IC is operating in continuous mode the duty cycles for the top and bottom MOSFETs are given by: Main Switch Duty Cycle = VOUT VIN Synchronous Switch Duty Cycle = VIN − VOUT VIN The MOSFET power dissipations at maximum output current are given by: PMAIN = VOUT (IMAX )2 (1+ δ) RDS(ON) + VIN ⎛I ⎞ ⎝ 2 ⎠ ( VIN )2 ⎜ MAX ⎟ (RDR ) (CMILLER ) • ⎡ 1 1 ⎤ + ⎢ ⎥( f) ⎣ VINTVCC – VTHMIN VTHMIN ⎦ PSYNC = VIN – VOUT (IMAX )2 (1+ δ) RDS(ON) VIN where δ is the temperature dependency of RDS(ON) and RDR (approximately 2Ω) is the effective driver resistance at the MOSFET’s Miller threshold voltage. VTHMIN is the typical MOSFET minimum threshold voltage. Both MOSFETs have I2R losses while the topside N-channel equation includes an additional term for transition losses, which are highest at high input voltages. For VIN < 20V the high current efficiency generally improves with larger MOSFETs, while for VIN > 20V the transition losses rapidly increase to the point that the use of a higher RDS(ON) device with lower CMILLER actually provides higher efficiency. The synchronous MOSFET losses are greatest at high input voltage when the top switch duty factor is low or during a short-circuit when the synchronous switch is on close to 100% of the period. The term (1+ δ) is generally given for a MOSFET in the form of a normalized RDS(ON) vs Temperature curve, but δ = 0.005/°C can be used as an approximation for low voltage MOSFETs. The optional Schottky diodes D3 and D4 shown in Figure 13 conduct during the dead-time between the conduction of the two power MOSFETs. This prevents the body diode of the bottom MOSFET from turning on, storing charge during the dead-time and requiring a reverse recovery period that could cost as much as 3% in efficiency at high VIN. A 1A to 3A Schottky is generally a good compromise for both regions of operation due to the relatively small average current. Larger diodes result in additional transition losses due to their larger junction capacitance. 38582f 19 LTC3858-2 APPLICATIONS INFORMATION CIN and COUT Selection The selection of CIN is simplified by the 2-phase architecture and its impact on the worst-case RMS current drawn through the input network (battery/fuse/capacitor). It can be shown that the worst-case capacitor RMS current occurs when only one controller is operating. The controller with the highest (VOUT)(IOUT) product needs to be used in the formula shown in Equation 1 to determine the maximum RMS capacitor current requirement. Increasing the output current drawn from the other controller will actually decrease the input RMS ripple current from its maximum value. The out-of-phase technique typically reduces the input capacitor’s RMS ripple current by a factor of 30% to 70% when compared to a single phase power supply solution. In continuous mode, the source current of the top MOSFET is a square wave of duty cycle (VOUT)/(VIN). To prevent large voltage transients, a low ESR capacitor sized for the maximum RMS current of one channel must be used. The maximum RMS capacitor current is given by: CIN Required IRMS ≈ IMAX VIN ⎡⎣( VOUT ) ( VIN – VOUT )⎤⎦1/ 2 (1) Equation 1 has a maximum at VIN = 2VOUT , where IRMS = IOUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that capacitor manufacturers’ ripple current ratings are often based on only 2000 hours of life. This makes it advisable to further derate the capacitor, or to choose a capacitor rated at a higher temperature than required. Several capacitors may be paralleled to meet size or height requirements in the design. Due to the high operating frequency of the LTC3858-2, ceramic capacitors can also be used for CIN. Always consult the manufacturer if there is any question. The benefit of 2-phase operation can be calculated by using Equation 1 for the higher power controller and then calculating the loss that would have resulted if both controller channels switched on at the same time. The total RMS power lost is lower when both controllers are operating due to the reduced overlap of current pulses required through the input capacitor’s ESR. This is why the input capacitor’s requirement calculated above for the worst-case controller is adequate for the dual controller design. Also, the input protection fuse resistance, battery resistance, and PC board trace resistance losses are also reduced due to the reduced peak currents in a 2-phase system. The overall benefit of a multiphase design will only be fully realized when the source impedance of the power supply/battery is included in the efficiency testing. The drains of the top MOSFETs should be placed within 1cm of each other and share a common CIN (s). Separating the sources and CIN may produce undesirable voltage and current resonances at VIN. A small (0.1μF to 1μF) bypass capacitor between the chip VIN pin and ground, placed close to the LTC3858-2, is also suggested. A small (1Ω to 10Ω) resistor placed between CIN (C1) and the VIN pin provides further isolation between the two channels. The selection of COUT is driven by the effective series resistance (ESR). Typically, once the ESR requirement is satisfied, the capacitance is adequate for filtering. The output ripple (ΔVOUT) is approximated by: ⎛ ⎞ 1 ΔVOUT ≈ ΔIL ⎜ESR + ⎟ 8 • f • COUT ⎠ ⎝ where fO is the operating frequency, COUT is the output capacitance and ΔIL is the ripple current in the inductor. The output ripple is highest at maximum input voltage since ΔIL increases with input voltage. 38582f 20 LTC3858-2 APPLICATIONS INFORMATION Setting Output Voltage Soft-Start (SS Pins) The LTC3858-2 output voltages are each set by an external feedback resistor divider carefully placed across the output, as shown in Figure 5. The regulated output voltage is determined by: The start-up of each VOUT is controlled by the voltage on the respective SS pin. When the voltage on the SS pin is less than the internal 0.8V reference, the LTC3858-2 regulates the VFB pin voltage to the voltage on the SS pin instead of 0.8V. The SS pin can be used to program an external soft-start function or to allow VOUT to track another supply during start-up. ⎛ R ⎞ VOUT = 0.8V ⎜1+ B ⎟ ⎝ RA ⎠ To improve the frequency response, a feedforward capacitor, CFF , may be used. Great care should be taken to route the VFB line away from noise sources, such as the inductor or the SW line. VOUT 1/2 LTC3858-2 RB CFF Soft-start is enabled by simply connecting a capacitor from the SS pin to ground, as shown in Figure 6. An internal 1μA current source charges the capacitor, providing a linear ramping voltage at the SS pin. The LTC3858-2 will regulate the VFB pin (and hence VOUT) according to the voltage on the SS pin, allowing VOUT to rise smoothly from 0V to its final regulated value. The total soft-start time will be approximately: VFB RA 38582 F05 tSS = CSS • 0.8V 1μA Figure 5. Setting Output Voltage 1/2 LTC3858-2 SS CSS SGND 38582 F06 Figure 6. Using the SS Pin to Program Soft-Start 38582f 21 LTC3858-2 APPLICATIONS INFORMATION Alternatively, the SS pin can be used to track two (or more) supplies during start-up, as shown qualitatively in Figures 7a and 7b. To do this, a resistor divider should be connected from the master supply (VX) to the SS pin of the slave supply (VOUT), as shown in Figure 8. During start-up, VOUT will track VX according to the ratio set by the resistor divider: + RTRACKB R VX RA = • TRACKA VOUT RTRACKA RA + RB For coincident tracking (VOUT = VX during start-up): RA = RTRACKA RB = RTRACKB VX(MASTER) OUTPUT VOLTAGE OUTPUT VOLTAGE VX(MASTER) VOUT(SLAVE) VOUT(SLAVE) 38582 F07a 38582 F07b TIME TIME (7a) Coincident Tracking (7b) Ratiometric Tracking Figure 7. Two Different Modes of Output Voltage Tracking Vx VOUT RB 1/2 LTC3858-2 VFB RA RTRACKB SS RTRACKA 38582 F08 Figure 8. Using the SS Pin for Tracking 38582f 22 LTC3858-2 APPLICATIONS INFORMATION INTVCC Regulators The LTC3858-2 features two separate internal P-channel low dropout linear regulators (LDO) that supply power at the INTVCC pin from either the VIN supply pin or the EXTVCC pin depending on the connection of the EXTVCC pin. INTVCC powers the gate drivers and much of the internal circuitry. The VIN LDO and the EXTVCC LDO regulate INTVCC to 5.1V. Each of these can supply a peak current of 50mA and must be bypassed to ground with a minimum of 4.7μF low ESR capacitor. Regardless of what type of bulk capacitor is used, an additional 1μF ceramic capacitor placed directly adjacent to the INTVCC and PGND pins is highly recommended. Good bypassing is needed to supply the high transient currents required by the MOSFET gate drivers and to prevent interaction between the channels. High input voltage applications in which large MOSFETs are being driven at high frequencies may cause the maximum junction temperature rating for the LTC3858-2 to be exceeded. The INTVCC current, which is dominated by the gate charge current, may be supplied by either the VIN LDO or the EXTVCC LDO. When the voltage on the EXTVCC pin is less than 4.7V, the VIN LDO is enabled. Power dissipation for the IC in this case is highest and is equal to VIN • IINTVCC. The gate charge current is dependent on operating frequency as discussed in the Efficiency Considerations section. The junction temperature can be estimated by using the equations given in Note 3 of the Electrical Characteristics. For example, the LTC3858-2 INTVCC current is limited to less than 32mA from a 40V supply when not using the EXTVCC supply at 70°C ambient temperature: TJ = 70°C + (32mA)(40V)(43°C/W) = 125°C To prevent the maximum junction temperature from being exceeded, the input supply current must be checked while operating in forced continuous mode (PLLIN/MODE = INTVCC) at maximum VIN. When the voltage applied to EXTVCC rises above 4.7V, the VIN LDO is turned off and the EXTVCC LDO is enabled. The EXTVCC LDO remains on as long as the voltage applied to EXTVCC remains above 4.5V. The EXTVCC LDO attempts to regulate the INTVCC voltage to 5.1V, so while EXTVCC is less than 5.1V, the LDO is in dropout and the INTVCC voltage is approximately equal to EXTVCC. When EXTVCC is greater than 5.1V, up to an absolute maximum of 14V, INTVCC is regulated to 5.1V. Using the EXTVCC LDO allows the MOSFET driver and control power to be derived from one of the switching regulator outputs (4.7V ≤ VOUT ≤ 14V) during normal operation and from the VIN LDO when the output is out of regulation (e.g., start-up, short-circuit). If more current is required through the EXTVCC LDO than is specified, an external Schottky diode can be added between the EXTVCC and INTVCC pins. In this case, do not apply more than 6V to the EXTVCC pin and make sure that EXTVCC ≤ VIN. Significant efficiency and thermal gains can be realized by powering INTVCC from the output, since the VIN current resulting from the driver and control currents will be scaled by a factor of (Duty Cycle)/(Switcher Efficiency). For 5V to 14V regulator outputs, this means connecting the EXTVCC pin directly to VOUT . Tying the EXTVCC pin to an 8.5V supply reduces the junction temperature in the previous example from 125°C to: TJ = 70°C + (32mA)(8.5V)(43°C/W) = 82°C However, for 3.3V and other low voltage outputs, additional circuitry is required to derive INTVCC power from the output. The following list summarizes the four possible connections for EXTVCC: 1. EXTVCC Grounded. This will cause INTVCC to be powered from the internal 5.1V regulator resulting in an efficiency penalty of up to 10% at high input voltages. 2. EXTVCC Connected Directly to VOUT . This is the normal connection for a 5V to 14V regulator and provides the highest efficiency. 3. EXTVCC Connected to an External Supply. If an external supply is available in the 5V to 14V range, it may be used to power EXTVCC. Ensure that EXTVCC < VIN. 4. EXTVCC Connected to an Output-Derived Boost Network. For 3.3V and other low voltage regulators, efficiency gains can still be realized by connecting EXTVCC to an output-derived voltage that has been boosted to greater than 4.7V. This can be done with the capacitive charge pump shown in Figure 9. Ensure that EXTVCC < VIN. 38582f 23 LTC3858-2 APPLICATIONS INFORMATION VIN CIN BAT85 VIN BAT85 MTOP VN2222LL TG1 1/2 LTC3858-2 EXTVCC L BAT85 RSENSE VOUT SW MBOT BG1 PGND COUT D 38582 F09 Figure 9. Capacitive Charge Pump for EXTVCC tions with very low duty cycles, the LTC3858-2 will begin cycle skipping in order to limit the short-circuit current. In this situation the bottom MOSFET will be dissipating most of the power but less than in normal operation. The short-circuit ripple current is determined by the minimum on-time, tON(MIN), of the LTC3858-2 (≈95ns), the input voltage and inductor value: ⎛V ⎞ ΔI L(SC) = tON(MIN) ⎜ IN ⎟ ⎝ L ⎠ The resulting average short-circuit current is: ISC = 50% • ILIM(MAX) RSENSE 1 – ΔIL(SC) 2 Topside MOSFET Driver Supply (CB, DB) Phase-Locked Loop and Frequency Synchronization External bootstrap capacitors, CB, connected to the BOOST pins supply the gate drive voltages for the topside MOSFETs. Capacitor CB in the Functional Diagram is charged though external diode DB from INTVCC when the SW pin is low. When one of the topside MOSFETs is turned on, the driver places the CB voltage across the gate-source of the desired MOSFET. This enhances the top MOSFET switch and turns it on. The switch node voltage, SW, rises to VIN and the BOOST pin follows. With the topside MOSFET on, the boost voltage is above the input supply: VBOOST = VIN + VINTVCC. The value of the boost capacitor, CB, needs to be 100 times that of the total input capacitance of the topside MOSFET(s). The reverse breakdown of the external Schottky diode must be greater than VIN(MAX). The LTC3858-2 has an internal phase-locked loop (PLL) comprised of a phase frequency detector, a lowpass filter, and a voltage-controlled oscillator (VCO). This allows the turn-on of the top MOSFET of controller 1 to be locked to the rising edge of an external clock signal applied to the PLLIN/MODE pin. The turn-on of controller 2’s top MOSFET is thus 180 degrees out of phase with the external clock. The phase detector is an edge sensitive digital type that provides zero degrees phase shift between the external and internal oscillators. This type of phase detector does not exhibit false lock to harmonics of the external clock. When adjusting the gate drive level, the final arbiter is the total input current for the regulator. If a change is made and the input current decreases, then the efficiency has improved. If there is no change in input current, then there is no change in efficiency. Fault Conditions: Current Limit and Current Foldback When the output current hits the current limit, the output voltage begins to drop. If the output voltage falls below 70% of its nominal output level, then the maximum sense voltage is progressively lowered to about half of its maximum selected value. Under short-circuit condi- When not prebiased, applying an external clock will invoke traditional PLL operation. If the external clock frequency is greater than the internal oscillator’s frequency, fOSC, then current is sourced continuously from the phase detector output, pulling up the VCO input. When the external clock frequency is less than fOSC, current is sunk continuously, pulling down the VCO input. If the external and internal frequencies are the same but exhibit a phase difference, the current sources turn on for an amount of time corresponding to the phase difference. The voltage at the VCO input is adjusted until the phase and frequency of the internal and external oscillators are identical. At the stable operating point, the phase detector output is high impedance and the internal filter capacitor, CLP , holds the voltage at the VCO input. 38582f 24 LTC3858-2 APPLICATIONS INFORMATION Table 3 summarizes the different states in which the FREQ pin can be used. 1000 900 FREQUENCY (kHz) 800 Table 3 700 FREQ PIN PLLIN/MODE PIN FREQUENCY 0V DC Voltage 350kHz 400 INTVCC DC Voltage 535kHz 300 Resistor DC Voltage 50kHz to 900kHz 200 Any of the Above External Clock Phase-Locked to External Clock 600 500 100 0 15 25 35 45 55 65 75 85 95 105 115 125 FREQ PIN RESISTOR (kΩ) 38582 F10 Figure 10. Relationship Between Oscillator Frequency and Resistor Value at the FREQ Pin Note that the LTC3858-2 can only be synchronized to an external clock whose frequency is within range of the LTC3858-2’s internal VCO, which is nominally 55kHz to 1MHz. This is guaranteed to be between 75kHz and 850kHz. Typically, the external clock (on the PLLIN/MODE pin) input high threshold is 1.6V, while the input low threshold is 1.1V. Rapid phase-locking can be achieved by using the FREQ pin to set a free-running frequency near the desired synchronization frequency. The VCO’s input voltage is prebiased at a frequency corresponding to the frequency set by the FREQ pin. Once prebiased, the PLL only needs to adjust the frequency slightly to achieve phase-locking and synchronization. Although it is not required that the free-running frequency be near external clock frequency, doing so will prevent the operating frequency from passing through a large range of frequencies as the PLL locks. Minimum On-Time Considerations Minimum on-time, tON(MIN), is the smallest time duration that the LTC3858-2 is capable of turning on the top MOSFET. It is determined by internal timing delays and the gate charge required to turn on the top MOSFET. Low duty cycle applications may approach this minimum on-time limit and care should be taken to ensure that: t ON(MIN) < VOUT VIN ( f) If the duty cycle falls below what can be accommodated by the minimum on-time, the controller will begin to skip cycles. The output voltage will continue to be regulated, but the ripple voltage and current will increase. The minimum on-time for the LTC3858-2 is approximately 95ns. However, as the peak sense voltage decreases the minimum on-time gradually increases up to about 130ns. This is of particular concern in forced continuous applications with low ripple current at light loads. If the duty cycle drops below the minimum on-time limit in this situation, a significant amount of cycle skipping can occur with correspondingly larger current and voltage ripple. 38582f 25 LTC3858-2 APPLICATIONS INFORMATION Efficiency Considerations The percent efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Percent efficiency can be expressed as: %Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percentage of input power. Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in LTC3858-2 circuits: 1) IC VIN current, 2) INTVCC regulator current, 3) I2R losses, 4) topside MOSFET transition losses. 1. The VIN current is the DC input supply current given in the Electrical Characteristics table, which excludes MOSFET driver and control currents. VIN current typically results in a small (<0.1%) loss. 2. INTVCC current is the sum of the MOSFET driver and control currents. The MOSFET driver current results from switching the gate capacitance of the power MOSFETs. Each time a MOSFET gate is switched from low to high to low again, a packet of charge, dQ, moves from INTVCC to ground. The resulting dQ/dt is a current out of INTVCC that is typically much larger than the control circuit current. In continuous mode, IGATECHG = f(QT + QB), where QT and QB are the gate charges of the topside and bottom side MOSFETs. Supplying INTVCC from an output-derived power source through EXTVCC will scale the VIN current required for the driver and control circuits by a factor of (Duty Cycle)/ (Efficiency). For example, in a 20V to 5V application, 10mA of INTVCC current results in approximately 2.5mA of VIN current. This reduces the midcurrent loss from 10% or more (if the driver was powered directly from VIN) to only a few percent. 3. I2R losses are predicted from the DC resistances of the fuse (if used), MOSFET, inductor, current sense resistor, and input and output capacitor ESR. In continuous mode the average output current flows through L and RSENSE, but is “chopped” between the topside MOSFET and the synchronous MOSFET. If the two MOSFETs have approximately the same RDS(ON), then the resistance of one MOSFET can simply be summed with the resistances of L, RSENSE and ESR to obtain I2R losses. For example, if each RDS(ON) = 30mΩ, RL = 50mΩ, RSENSE = 10mΩ and RESR = 40mΩ (sum of both input and output capacitance losses), then the total resistance is 130mΩ. This results in losses ranging from 3% to 13% as the output current increases from 1A to 5A for a 5V output, or a 4% to 20% loss for a 3.3V output. Efficiency varies as the inverse square of VOUT for the same external components and output power level. The combined effects of increasingly lower output voltages and higher currents required by high performance digital systems is not doubling but quadrupling the importance of loss terms in the switching regulator system! 4. Transition losses apply only to the topside MOSFET(s), and become significant only when operating at high input voltages (typically 15V or greater). Transition losses can be estimated from: Transition Loss = (1.7) • VIN • 2 • IO(MAX) • CRSS • f Other “hidden” losses such as copper trace and internal battery resistances can account for an additional 5% to 10% efficiency degradation in portable systems. It is very important to include these “system” level losses during the design phase. The internal battery and fuse resistance losses can be minimized by making sure that CIN has adequate charge storage and very low ESR at the switching frequency. A 25W supply will typically require a minimum of 20μF to 40μF of capacitance having a maximum of 20mΩ to 50mΩ of ESR. The LTC3858-2 2-phase architecture typically halves this input capacitance requirement over competing solutions. Other losses including Schottky conduction losses during dead-time and inductor core losses generally account for less than 2% total additional loss. 38582f 26 LTC3858-2 APPLICATIONS INFORMATION Checking Transient Response The regulator loop response can be checked by looking at the load current transient response. Switching regulators take several cycles to respond to a step in DC (resistive) load current. When a load step occurs, VOUT shifts by an amount equal to ΔILOAD (ESR), where ESR is the effective series resistance of COUT . ΔILOAD also begins to charge or discharge COUT generating the feedback error signal that forces the regulator to adapt to the current change and return VOUT to its steady-state value. During this recovery time VOUT can be monitored for excessive overshoot or ringing, which would indicate a stability problem. OPTILOOP compensation allows the transient response to be optimized over a wide range of output capacitance and ESR values. The availability of the ITH pin not only allows optimization of control loop behavior, but it also provides a DC coupled and AC filtered closed-loop response test point. The DC step, rise time and settling at this test point truly reflects the closed-loop response. Assuming a predominantly second order system, phase margin and/ or damping factor can be estimated using the percentage of overshoot seen at this pin. The bandwidth can also be estimated by examining the rise time at the pin. The ITH external components shown in Figure 13 circuit will provide an adequate starting point for most applications. The ITH series RC-CC filter sets the dominant pole-zero loop compensation. The values can be modified slightly (from 0.5 to 2 times their suggested values) to optimize transient response once the final PC layout is done and the particular output capacitor type and value have been determined. The output capacitors need to be selected because the various types and values determine the loop gain and phase. An output current pulse of 20% to 80% of full-load current having a rise time of 1μs to 10μs will produce output voltage and ITH pin waveforms that will give a sense of the overall loop stability without breaking the feedback loop. Placing a resistive load and a power MOSFET directly across the output capacitor and driving the gate with an appropriate signal generator is a practical way to produce a realistic load step condition. The initial output voltage step resulting from the step change in output current may not be within the bandwidth of the feedback loop, so this signal cannot be used to determine phase margin. This is why it is better to look at the ITH pin signal which is in the feedback loop and is the filtered and compensated control loop response. The gain of the loop will be increased by increasing RC and the bandwidth of the loop will be increased by decreasing CC. If RC is increased by the same factor that CC is decreased, the zero frequency will be kept the same, thereby keeping the phase shift the same in the most critical frequency range of the feedback loop. The output voltage settling behavior is related to the stability of the closed-loop system and will demonstrate the actual overall supply performance. A second, more severe transient is caused by switching in loads with large (>1μF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel with COUT , causing a rapid drop in VOUT . No regulator can alter its delivery of current quickly enough to prevent this sudden step change in output voltage if the load switch resistance is low and it is driven quickly. If the ratio of CLOAD to COUT is greater than 1:50, the switch rise time should be controlled so that the load rise time is limited to approximately 25 • CLOAD. Thus a 10μF capacitor would require a 250μs rise time, limiting the charging current to about 200mA. 38582f 27 LTC3858-2 APPLICATIONS INFORMATION Design Example As a design example for one channel, assume VIN = 12V(nominal), VIN = 22V (max), VOUT = 3.3V, IMAX = 5A, VSENSE(MAX) = 75mV and f = 350kHz. The inductance value is chosen first based on a 30% ripple current assumption. The highest value of ripple current occurs at the maximum input voltage. Tie the FREQ pin to GND, generating 350kHz operation. The minimum inductance for 30% ripple current is: ΔIL = VOUT ⎛ VOUT ⎞ ⎟ ⎜1– ( f) (L) ⎝ VIN ⎠ A 4.7μH inductor will produce 29% ripple current. The peak inductor current will be the maximum DC value plus one half the ripple current, or 5.73A. Increasing the ripple current will also help ensure that the minimum on-time of 95ns is not violated. The minimum on-time occurs at maximum VIN: t ON(MIN) = VOUT 3.3V = = 429ns VIN ( f) 22V (350kHz ) The equivalent RSENSE resistor value can be calculated by using the minimum value for the maximum current sense threshold (64mV): RSENSE ≤ 64mV = 0.011Ω 5.73A Choosing 0.5% resistors: RA = 24.9k and RB = 77.7k yields an output voltage of 3.296V. The power dissipation on the topside MOSFET can be easily estimated. Choosing a Fairchild FDS6982S dual MOSFET results in: RDS(ON) = 0.035Ω/0.022Ω, CMILLER = 215pF. At maximum input voltage with T(estimated) = 50°C: PMAIN = 3.3V (5A )2 ⎡⎣1+ (0.005) (50°C – 25°C)⎤⎦ 22V 5A (0.035Ω) + (22V )2 (2.5Ω) (215pF ) • 2 ⎡ 1 ⎤ 1 + ⎢⎣ ⎥ (350kHz ) = 331mW 5V – 2.3V 2.3V ⎦ A short-circuit to ground will result in a folded back current of: ISC = 32mV 1 ⎛ 95ns (22V ) ⎞ – ⎜ ⎟ = 2.98A 0.015Ω 2 ⎝ 4.7μH ⎠ with a typical value of RDS(ON) and δ = (0.005/°C)(25°C) = 0.125. The resulting power dissipated in the bottom MOSFET is: 2 PSYNC = (2.98A ) (1.125) (0.022Ω) = 220mW which is less than full-load conditions. CIN is chosen for an RMS current rating of at least 3A at temperature assuming only this channel is on. COUT is chosen with an ESR of 0.02Ω for low output ripple voltage. The output ripple in continuous mode will be highest at the maximum input voltage. The output voltage ripple due to ESR is approximately: VORIPPLE = RESR (ΔIL) = 0.02Ω(1.45A) = 29mVP-P 38582f 28 LTC3858-2 APPLICATIONS INFORMATION PC Board Layout Checklist When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the IC. These items are also illustrated graphically in the layout diagram of Figure 11. Figure 12 illustrates the current waveforms present in the various branches of the 2-phase synchronous regulators operating in the continuous mode. Check the following in your layout: 1. Are the top N-channel MOSFETs MTOP1 and MTOP2 located within 1cm of each other with a common drain connection at CIN? Do not attempt to split the input decoupling for the two channels as it can cause a large resonant loop. 2. Are the signal and power grounds kept separate? The combined IC signal ground pin and the ground return of CINTVCC must return to the combined COUT (–) terminals. The path formed by the top N-channel MOSFET, Schottky diode and the CIN capacitor should have short leads and PC trace lengths. The output capacitor (–) terminals should be connected as close as possible to the (–) terminals of the input capacitor by placing the capacitors next to each other and away from the Schottky loop described above. 3. Do the LTC3858-2 VFB pins’ resistive dividers connect to the (+) terminals of COUT? The resistive divider must be connected between the (+) terminal of COUT and signal ground. The feedback resistor connections should not be along the high current input feeds from the input capacitor(s). 4. Are the SENSE– and SENSE+ leads routed together with minimum PC trace spacing? The filter capacitor between SENSE+ and SENSE– should be as close as possible to the IC. Ensure accurate current sensing with Kelvin connections at the SENSE resistor. 5. Is the INTVCC decoupling capacitor connected close to the IC, between the INTVCC and the power ground pins? This capacitor carries the MOSFET drivers’ current peaks. An additional 1μF ceramic capacitor placed immediately next to the INTVCC and PGND pins can help improve noise performance substantially. 6. Keep the switching nodes (SW1, SW2), top gate nodes (TG1, TG2), and boost nodes (BOOST1, BOOST2) away from sensitive small-signal nodes, especially from the opposites channel’s voltage and current sensing feedback pins. All of these nodes have very large and fast moving signals and therefore should be kept on the “output side” of the LTC3858-2 and occupy minimum PC trace area. 7. Use a modified “star ground” technique: a low impedance, large copper area central grounding point on the same side of the PC board as the input and output capacitors with tie-ins for the bottom of the INTVCC decoupling capacitor, the bottom of the voltage feedback resistive divider and the SGND pin of the IC. 38582f 29 LTC3858-2 APPLICATIONS INFORMATION PC Board Layout Debugging Start with one controller on at a time. It is helpful to use a DC-50MHz current probe to monitor the current in the inductor while testing the circuit. Monitor the output switching node (SW pin) to synchronize the oscilloscope to the internal oscillator and probe the actual output voltage as well. Check for proper performance over the operating voltage and current range expected in the application. The frequency of operation should be maintained over the input voltage range down to dropout and until the output load drops below the low current operation threshold—typically 10% of the maximum designed current level in Burst Mode operation. The duty cycle percentage should be maintained from cycle to cycle in a well-designed, low noise PCB implementation. Variation in the duty cycle at a subharmonic rate can suggest noise pickup at the current or voltage sensing inputs or inadequate loop compensation. Overcompensation of the loop can be used to tame a poor PC layout if regulator bandwidth optimization is not required. Only after each controller is checked for its individual performance should both controllers be turned on at the same time. A particularly difficult region of operation is when one controller channel is nearing its current comparator trip point when the other channel is turning on its top MOSFET. This occurs around 50% duty cycle on either channel due to the phasing of the internal clocks and may cause minor duty cycle jitter. Investigate whether any problems exist only at higher output currents or only at higher input voltages. If problems coincide with high input voltages and low output currents, look for capacitive coupling between the BOOST, SW, TG, and possibly BG connections and the sensitive voltage and current pins. The capacitor placed across the current sensing pins needs to be placed immediately adjacent to the pins of the IC. This capacitor helps to minimize the effects of differential noise injection due to high frequency capacitive coupling. If problems are encountered with high current output loading at lower input voltages, look for inductive coupling between CIN, Schottky and the top MOSFET components to the sensitive current and voltage sensing traces. In addition, investigate common ground path voltage pickup between these components and the SGND pin of the IC. An embarrassing problem, which can be missed in an otherwise properly working switching regulator, results when the current sensing leads are hooked up backwards. The output voltage under this improper hookup will still be maintained but the advantages of current mode control will not be realized. Compensation of the voltage loop will be much more sensitive to component selection. This behavior can be investigated by temporarily shorting out the current sensing resistor—don’t worry, the regulator will still maintain control of the output voltage. Reduce VIN from its nominal level to verify operation of the regulator in dropout. Check the operation of the undervoltage lockout circuit by further lowering VIN while monitoring the outputs to verify operation. 38582f 30 LTC3858-2 APPLICATIONS INFORMATION RPU2 SS1 LTC3858-2 PGOOD2 ITH1 VPULL-UP (<6V) PGOOD2 RPU1 PGOOD1 VFB1 VPULL-UP (<6V) PGOOD1 L1 SENSE1+ TG1 SENSE1– SW1 VOUT1 CB1 FREQ PHASMD RSENSE M1 BOOST1 M2 D1 BG1 CLKOUT PLLIN/MODE RUN1 VIN CVIN RIN GND + INTVCC SENSE2+ BG2 VOUT1 CINTVCC VIN CIN COUT2 1μF CERAMIC M3 BOOST2 + EXTVCC SENSE2– VFB2 COUT1 PGND RUN2 SGND 1μF CERAMIC + fIN M4 D2 CB2 ITH2 SS2 SW2 RSENSE TG2 VOUT2 L2 38582 F11 Figure 11. Recommended Printed Circuit Layout Diagram 38582f 31 LTC3858-2 APPLICATIONS INFORMATION SW1 L1 D1 RSENSE1 VOUT1 COUT1 RL1 VIN RIN CIN SW2 BOLD LINES INDICATE HIGH SWITCHING CURRENT. KEEP LINES TO A MINIMUM LENGTH. D2 L2 RSENSE2 VOUT2 COUT2 RL2 38582 F12 Figure 12. Branch Current Waveforms 38582f 32 LTC3858-2 TYPICAL APPLICATIONS RB1 215k INTVCC CF1 15pF C1 1nF RA1 68.1k CITH1A 150pF LTC3858-2 SENSE1+ PGOOD2 SENSE1– VFB1 100k 100k PGOOD1 SW1 ITH1 CITH1 820pF (OPTIONAL TRACKING) 68.1k VOUT2 CSS2 0.1μF COUT1 150μF D1 VIN SS1 ILIM INTVCC PHASMD CLKOUT PGND PLLIN/MODE SGND EXTVCC TG2 RUN1 RUN2 BOOST2 FREQ CIN 22μF VIN 9V TO 38V CINT 4.7μF D2 MTOP2 CB2 0.47μF L2 7.2μH SS2 RSENSE2 10mΩ VOUT2 8.5V COUT2 3A 150μF SW2 ITH2 CITH2 680pF RITH2 27k VOUT1 3.3V 5A MTOP1 TG1 RITH1 CSS1 15k 0.1μF 215k RSENSE1 7mΩ CB1 0.47μF BOOST1 VOUT2 L1 3.3μH MBOT1 BG1 MBOT2 BG2 CITH2A 100pF VFB2 RA2 44.2k SENSE2– C2 1nF CF2 39pF SENSE2+ RB2 422k 38582 F13 COUT1, COUT2: SANYO 10TPD150M L1: SUMIDA CDEP105-3R2M L2: SUMIDA CDEP105-7R2M MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP Efficiency vs Output Current Start-Up SW Node Waveforms 100 90 EFFICIENCY (%) 80 70 VOUT = 8.5V VOUT2 2V/DIV VOUT = 3.3V SW1 5V/DIV 60 50 VOUT1 2V/DIV 40 SW2 5V/DIV 30 20 10 VIN = 12V Burst Mode OPERATION 0 0.1 0.00001 0.0001 0.001 0.01 OUTPUT CURRENT (A) 1 10 20ms/DIV 38582 F13c 1μs/DIV 38582 F13d 38582 F13b Figure 13. High Efficiency Dual 8.5V/3.3V Step-Down Converter 38582f 33 LTC3858-2 TYPICAL APPLICATIONS High Efficiency Dual 2.5V/3.3V Step-Down Converter RB1 143k CF1 22pF RA1 68.1k INTVCC C1 1nF CITH1A 100pF LTC3858-2 SENSE1+ PGOOD2 SENSE1– VFB1 100k 100k PGOOD1 MBOT1 BG1 SW1 ITH1 RITH1 22k CSS1 0.01μF CSS2 0.01μF D1 SS1 INTVCC ILIM PHASMD PGND CLKOUT PLLIN/MODE SGND EXTVCC TG2 RUN1 RUN2 BOOST2 FREQ ITH2 RITH2 15k CITH2A 150pF COUT1 150μF VOUT1 2.5V 5A MTOP1 TG1 VIN SS2 CITH2 820pF RSENSE1 7mΩ CB1 0.47μF BOOST1 CITH1 820pF L1 2.4μH CIN 22μF VIN 4V TO 38V CINT 4.7μF D2 MTOP2 CB2 0.47μF L2 3.2μH RSENSE2 7mΩ SW2 BG2 VOUT2 3.3V COUT2 5A 150μF MBOT2 VFB2 RA2 68.1k SENSE2– CF2 15pF C2 1nF SENSE2+ RB2 215k 38582 TA02 COUT1, COUT2: SANYO 10TPD150M L1: SUMIDA CDEP105-2R5 L2: SUMIDA CDEP105-3R2M MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP 38582f 34 LTC3858-2 TYPICAL APPLICATIONS High Efficiency Dual 12V/5V Step-Down Converter RB1 422k CF1 33pF RA1 30.1k C1 1nF CITH1A 100pF 100k INTVCC SENSE1+ PGOOD2 SENSE1– PGOOD1 100k MBOT1 BG1 VFB1 SW1 CITH1 680pF CSS1 0.01μF VOUT1 RFREQ 60k CSS2 0.01μF LTC3858-2 ITH2 CITH2 680pF RITH2 17k D1 VIN SS1 INTVCC ILIM PHASMD PGND CLKOUT PLLIN/MODE SGND EXTVCC TG2 RUN1 RUN2 BOOST2 FREQ SS2 CITH2A 100pF COUT1 47μF VOUT1 12V 3A MTOP1 TG1 ITH1 RSENSE1 10mΩ CB1 0.47μF BOOST1 RITH1 33k L1 8.8μH CIN 22μF VIN 12.5V TO 38V CINT 4.7μF D2 MTOP2 CB2 0.47μF L2 4.3μH RSENSE2 7mΩ SW2 BG2 VOUT2 5V COUT2 5A 150μF MBOT2 VFB2 RA2 75k SENSE2– CF2 15pF C2 1nF SENSE2+ COUT1: KEMET T525D476M016E035 COUT2: SANYO 10TPD150M L1: SUMIDA CDEP105-8R8M L2: SUMIDA CDEP105-4R3M MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP RB2 393k 38582 TA03 38582f 35 LTC3858-2 TYPICAL APPLICATIONS High Efficiency Dual 24V/5V Step-Down Converter RB1 487k CF1 18pF RA1 16.9k C1 1nF CITH1A 100pF 100k SENSE1+ PGOOD2 SENSE1– PGOOD1 INTVCC 100k VFB1 MBOT1 BG1 SW1 RITH1 46k CSS1 0.01μF VOUT2 RFREQ 60k CSS2 0.01μF ITH1 RITH2 17k D1 VIN SS1 INTVCC ILIM PHASMD CLKOUT PGND PLLIN/MODE SGND TG2 EXTVCC RUN1 BOOST2 RUN2 FREQ ITH2 CITH2 680pF MTOP1 TG1 LTC3858-2 SS2 CITH2A 100pF RSENSE1 25mΩ CB1 0.47μF BOOST1 CITH1 680pF L1 22μH CIN 22μF CINT 4.7μF COUT1 22μF =2 CERAMIC VIN 28V TO 38V D2 MTOP2 CB2 0.47μF L2 4.3μH RSENSE2 7mΩ SW2 BG2 VOUT1 24V 1A VOUT2 5V COUT2 5A 150μF MBOT2 VFB2 RA2 75k SENSE2– CF2 15pF C2 1nF SENSE2+ COUT2: SANYO 10TPD150M L1: SUMIDA CDRH105R-220M L2: SUMIDA CDEP105-4R3M MTOP1, MTOP2, MBOT1, MBOT2: VISHAY Si7848DP RB2 392k 38582 TA04 38582f 36 LTC3858-2 TYPICAL APPLICATIONS High Efficiency Dual 1V/1.2V Step-Down Converter RB1 28.7k CF1 56pF RA1 115k C1 1nF CITH1A 200pF 100k INTVCC SENSE1+ PGOOD2 SENSE1– PGOOD1 100k VFB1 L1 MBOT1 0.47μH BG1 SW1 CITH1 1000pF CSS1 0.01μF RFREQ 60k CSS2 0.01μF CITH2A 200pF VIN SS1 INTVCC ILIM PHASMD CLKOUT PGND PLLIN/MODE SGND TG2 EXTVCC RUN1 BOOST2 RUN2 FREQ ITH2 COUT1 220μF =2 D1 LTC3858-2 SS2 RITH2 CITH2 3.93k 1000pF MTOP1 TG1 ITH1 RITH1 3.93k RSENSE1 4mΩ CB1 0.47μF BOOST1 VOUT1 1V 8A CIN 22μF VIN 12V CINT 4.7μF D2 MTOP2 CB2 0.47μF L2 0.47μH RSENSE2 4mΩ SW2 BG2 MBOT2 VOUT2 1.2V COUT2 8A 220μF =2 VFB2 RA2 115k SENSE2– CF2 56pF C2 1nF SENSE2+ COUT1, COUT2: SANYO 2R5TPE220M L1: SUMIDA CDEP105-0R4 L2: SUMIDA CDEP105-0R4 MTOP1, MTOP2: RENESAS RJK0305 MBOT1, MBOT2: RENESAS RJK0328 RB2 57.6k 38582 TA05 38582f 37 LTC3858-2 TYPICAL APPLICATIONS High Efficiency Dual 1V/1.2V Step-Down Converter with Inductor DCR Current Sensing RB1 28.7k CF1 56pF RA1 115k RS1 1.18k C1 0.1μF CITH1A 200pF SENSE1+ SENSE1– PGOOD2 100k INTVCC 100k PGOOD1 SW1 CITH1 1000pF RFREQ 65k MTOP1 TG1 ITH1 CSS1 0.01μF RITH2 3.93k VOUT1 1V 8A D1 LTC3858-2 VIN SS1 INTVCC ILIM PHASMD CLKOUT PGND PLLIN/MODE SGND EXTVCC TG2 RUN1 RUN2 BOOST2 FREQ CIN 22μF VIN 12V CINT 4.7μF D2 MTOP2 CB2 0.47μF CSS2 0.01μF CITH2 1000pF COUT1 220μF =2 CB1 0.47μF BOOST1 RITH1 3.93k L1 0.47μH MBOT1 BG1 VFB1 L2 0.47μH SS2 SW2 ITH2 BG2 MBOT2 CITH2A 220pF VOUT2 1.2V COUT2 8A 220μF =2 VFB2 RA2 115k SENSE2– CF2 56pF RB2 57.6k C2 0.1μF COUT1, COUT2: SANYO 2R5TPE220M L1, L2: VISHAY IHL P2525CZERR47M06 MTOP1, MTOP2: RENESAS RJK0305 MBOT1, MBOT2: RENESAS RJK0328 SENSE2+ RS2 1.18k 38582 TA06 38582f 38 LTC3858-2 PACKAGE DESCRIPTION UH Package 32-Lead Plastic QFN (5mm × 5mm) (Reference LTC DWG # 05-08-1693 Rev D) 0.70 p0.05 5.50 p0.05 4.10 p0.05 3.45 p 0.05 3.50 REF (4 SIDES) 3.45 p 0.05 PACKAGE OUTLINE 0.25 p 0.05 0.50 BSC RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 5.00 p 0.10 (4 SIDES) BOTTOM VIEW—EXPOSED PAD 0.75 p 0.05 R = 0.05 TYP 0.00 – 0.05 PIN 1 NOTCH R = 0.30 TYP OR 0.35 s 45o CHAMFER R = 0.115 TYP 31 32 0.40 p 0.10 PIN 1 TOP MARK (NOTE 6) 1 2 3.50 REF (4-SIDES) 3.45 p 0.10 3.45 p 0.10 (UH32) QFN 0406 REV D 0.200 REF NOTE: 1. DRAWING PROPOSED TO BE A JEDEC PACKAGE OUTLINE M0-220 VARIATION WHHD-(X) (TO BE APPROVED) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 0.25 p 0.05 0.50 BSC 38582f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 39 LTC3858-2 TYPICAL APPLICATION High Efficiency 2-Phase 12V/150W Step-Down Converter RB1 698k CF1 10pF RA1 49.9k SENSE1+ C1 1nF SENSE1– CITH1A 68pF 100k INTVCC PGOOD2 100k PGOOD1 VFB1 MBOT1 BG1 CITH1 3300pF VOUT SS1 ITH1 VFB1 VIN SS1 INTVCC ILIM PHASMD CLKOUT PGND PLLIN/MODE SGND TG2 EXTVCC RUN1 BOOST2 RUN2 FREQ SW2 SS2 CIN 10μF 50V CINT 4.7μF 10μF 50V VIN 19V TO 28V D2 MTOP2 CB2 0.47μF L2 6μH RSENSE2 5mΩ COUT2 22μF 16V MBOT2 BG2 VFB2 SENSE2– C2 1nF MTOP1 COUT1 22μF 16V VOUT 12V 12.5A D1 LTC3858-2 ITH2 RSENSE1 5mΩ CB1 0.47μF TG1 ITH1 CSS1 0.1μF 10μF 16V SW1 BOOST1 RITH1 2.94k L1 6μH SENSE2+ 10μF 16V COUT1, COUT2: SANYO 16TQC22M L1, L2: SUMIDA CDEP106-6ROM MTOP1, MTOP2: INFINEON BSZ097N04LS MBOT1, MBOT2: INFINEON BSZ097N04LS 38582 TA07 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC3859 Low IQ, Triple Output Buck/Buck/Boost Synchronous Outputs (≥5V) Remain in Regulation Through Cold Crank 2.5V ≤ VIN ≤ 38V, DC/DC Controller VOUT(BUCKS) Up to 24V, VOUT(BOOST) Up to 60V, IQ = 55μA, LTC3868/LTC3868-1 Low IQ, Dual Output 2-Phase Synchronous StepDown DC/DC Controllers with 99% Duty Cycle Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 24V, 0.8V ≤ VOUT ≤ 14V, IQ = 170μA LTC3857/LTC3857-1 Low IQ, Dual Output 2-Phase Synchronous StepDown DC/DC Controllers with 99% Duty Cycle Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz, 4V≤ VIN ≤ 38V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA, LTC3890/LTC3890-1 60V, Low IQ, Dual 2-Phase Synchronous Step-Down DC/DC Controller with 99% Duty Cycle Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA, LTC3834/LTC3834-1 Low IQ, Synchronous Step-Down DC/DC Controllers Phase-Lockable Fixed Operating Frequency 140kHz to 650kHz, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V, IQ = 30μA, LTC3835/LTC3835-1 Low IQ, Synchronous Step-Down DC/DC Controllers Phase-Lockable Fixed Operating Frequency 140kHz to 650kHz, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V, IQ = 80μA, LTC3891 60V, Low IQ, Synchronous Step-Down DC/DC Controller with 99% Duty Cycle Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA, LTC3824 Low IQ, High Voltage DC/DC Controller, 100% Duty Cycle Selectable Fixed 200kHz to 600kHz Operating Frequency 4V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ VIN, IQ = 40μA, MSOP-10E 38582f 40 Linear Technology Corporation LT 1110 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2010