IPD70N10S3-12 OptiMOS®-T Power-Transistor Product Summary V DS 100 V R DS(on),max 11.1 mΩ ID 70 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 70 T C=100°C, V GS=10V1) 48 Unit A Pulsed drain current1) I D,pulse T C=25°C 280 Avalanche energy, single pulse1) E AS I D=35A 410 mJ Avalanche current, single pulse I AS 70 A Gate source voltage V GS ±20 V Power dissipation P tot 125 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2008-04-22 IPD70N10S3-12 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.2 minimal footprint - - 62 6 cm2 cooling area2) - - 40 Thermal characteristics1) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=83µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V, T j=25°C - 0.01 0.1 - 1 100 V DS=80V, V GS=0V, T j=125°C1) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=70A - 9.2 11.1 mΩ Rev. 1.0 page 2 2008-04-22 IPD70N10S3-12 Parameter Symbol Values Conditions Unit min. typ. max. - 3350 4355 - 940 1222 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 105 158 Turn-on delay time t d(on) - 17 - Rise time tr - 8 - Turn-off delay time t d(off) - 25 - Fall time tf - 8 - Gate to source charge Q gs - 18 23 Gate to drain charge Q gd - 16 24 Gate charge total Qg - 51 65 Gate plateau voltage V plateau - 5.5 - V - - 70 A - - 280 0.6 1 1.2 V - 100 - ns - 265 - nC V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=70A, R G=3.5Ω pF ns Gate Charge Characteristics1) V DD=80V, I D=70A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=70A, T j=25°C Reverse recovery time1) t rr V R=50V, I F=I S, di F/dt =100A/µs Reverse recovery charge1) Q rr 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2008-04-22 IPD70N10S3-12 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 80 140 70 120 60 100 50 I D [A] P tot [W] 80 60 40 30 40 20 20 10 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 0.5 100 Z thJC [K/W] I D [A] 100 µs 1 ms 0.1 -1 10 0.05 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2008-04-22 IPD70N10S3-12 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 280 35 5.5 V 10 V 6V 240 7V 200 R DS(on) [mΩ] 25 160 I D [A] 6.5 V 120 6V 15 80 6.5 V 5.5V 40 7V 10 V 5V 0 5 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 100 120 140 180 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 70 A; V GS = 10 V parameter: T j 250 25 -55 °C 200 20 I D [A] 150 175 °C 100 R DS(on) [mΩ] 25 °C 10 50 0 3 4 5 6 7 V GS [V] Rev. 1.0 15 5 -60 -20 20 60 100 T j [°C] page 5 2008-04-22 IPD70N10S3-12 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss V GS(th) [V] 3 C [pF] 3.5 400 µA 103 Coss 80 µA 2.5 102 2 Crss 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 103 25 °C 100 °C 150 °C I F [A] I AV [A] 102 101 175 °C 25 °C 0.6 0.8 100 1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.0 10 0.1 1 10 100 1000 t AV [µs] page 6 2008-04-22 IPD70N10S3-12 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 115 900 17.5 A 800 110 700 V BR(DSS) [V] E AS [mJ] 600 500 35 A 400 105 100 300 70 A 200 95 100 90 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD 10 V GS 9 20 V Qg 80 V 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 10 20 30 40 Q gate Q gd 50 Q gate [nC] Rev. 1.0 page 7 2008-04-22 IPD70N10S3-12 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2008-04-22 IPD70N10S3-12 Revision History Version Rev. 1.0 Date Changes page 9 2008-04-22