AOB430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS & Sony 259 specifications). AOB430L is a Green Product ordering option. AOB430 and AOB430L are electrically identical. VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 mΩ (VGS =10V) RDS(ON) < 85 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation Junction and Storage Temperature Range Alpha Omega Semiconductor, Ltd. V A 12 IAR 12 A EAR 23 mJ 30 50 2 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±20 ID IDM PD TC=100°C TA=25°C A Units V 12 TC=100°C Pulsed Drain Current Maximum 60 RθJA RθJC Typ 11.2 50 2.5 °C Max 13.5 60 3 Units °C/W °C/W °C/W AOB430 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=12A Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time 2.2 3 V 53 63 A 95 60 VDS=5V, ID=12A 14 0.74 450 85 mΩ mΩ S 1 V 12 A 540 pF VGS=0V, VDS=30V, f=1MHz 61 VGS=0V, VDS=0V, f=1MHz 1.35 2 Ω 7.5 10 nC 3.8 5 nC pF 27 VGS=10V, VDS=30V, ID=12A pF nC Gate Drain Charge 1.9 nC Turn-On DelayTime 4.2 ns 3.4 ns 16 ns 2 ns Turn-Off DelayTime tf Turn-Off Fall Time Qrr nA 1.2 tD(off) trr µA 100 VGS=4.5V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=48V, VGS=0V RDS(ON) Max 60 VGS(th) IS Typ VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω IF=12A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 27.6 35 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:Aug 2005 Alpha & Omega Semiconductor, Ltd. AOB430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 25 7V 15 15 ID(A) 5V 20 ID (A) VDS=5V 6V 4.5V 125°C 10 4V 10 25°C 5 3.5V 5 VGS=3V 0 0 1 2 3 4 0 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 Normalized On-Resistance 2.2 70 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 80 VGS=6V 60 VGS=10V 50 40 0 4 8 12 16 20 2 VGS=10V, 12A 1.8 1.6 1.4 VGS=4.5V,6A 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 140 1.0E+00 ID=12A 125°C 120 125°C IS (A) RDS(ON) (mΩ) 2.5 100 1.0E-01 1.0E-02 80 25°C 25°C 60 1.0E-03 1.0E-04 40 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOB430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 VDS=30V ID=12A 600 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 0 2 4 6 8 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 10 30 200 TJ(Max)=175°C, TA=25°C TJ(Max)=175°C TA=25°C 160 100 RDS(ON) limited 10 DC Power (W) ID (Amps) 10µs 100µs 120 80 1ms, DC 1 40 0 0.1 0.1 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=3°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOB430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 12 tA = 10 L ⋅ ID BV − V DD Power Dissipation (W) ID(A), Peak Avalanche Current 14 8 6 TA=25°C 4 2 0 0.00001 50 40 30 20 10 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 60 12 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 16 8 40 20 4 0 0.001 0 0 25 50 75 100 125 150 10 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000