CREE C450DA3547-0315 Rectangular led rf performance high reliability - eutectic attach Datasheet

Direct Attach DA3547™ LEDs
CxxxDA3547-Sxxx00
Data Sheet
Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
for the TV-backlighting and general-illumination markets. The DA3547 LEDs are among the brightest in the top-view
market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpaddown design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance
from improved thermal management. The design is optimally suited for industry-standard top-view packages.
FEATURES
APPLICATIONS
•
•
Rectangular LED RF Performance
–
450 & 460 nm – 76 mW min
Large LCD Backlighting
–
Television
•
High Reliability - Eutectic Attach
•
General Illumination
•
Low Forward Voltage (Vf) – 3.1 V Typical at 50 mA
•
Medium LCD Backlighting
•
Maximum DC Forward Current – 150 mA
–
Portable PCs
•
1000-V ESD Threshold Rating
–
Monitors
•
InGaN Junction-Down Design for Improved Thermal
•
LED Video Displays
Management
•
White LEDs
•
No Wire Bonds Required
CxxxDA3547-Sxxx00 Chip Diagram
Top View
Die Cross Section
.A
CPR3EL Rev
Data Sheet:
DA3547 LED
350 x 470 μm
Bottom View
Anode (+)
296 x 90 μm
Gap 90 μm
Cathode (-)
296 x 236 μm
t = 155 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1,3, & 4
CxxxDA3547-Sxxx00
DC Forward Current
150 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
200 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA
Part Number
Note 3
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA3547-Sxxx00
2.8
3.1
3.4
2
20
C460DA3547-Sxxx00
2.8
3.1
3.4
2
21
Mechanical Specifications
CxxxDA3547-Sxxx00
Description
Dimension
Tolerance
P-N Junction Area (μm)
296 x 416
±35
Chip Bottom Area (μm)
350 x 470
±35
Chip Top Area (μm)
200 x 320
±35
Chip Thickness (μm)
155
±15
AuSn Bond Pad Width – Anode (um)
90
±15
AuSn Bond Pad Length – Anode (um)
296
±35
AuSn Bond Pad Width – Cathode (um)
236
±35
AuSn Bond Pad Length – Cathode (um)
296
±35
90
±15
3
±0.5
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and
intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific
package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated
at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average
values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4
packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere
using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
160
Maximum Forward Current (mA)
140
120
100
80
Rth j-a = 10
Rth j-a = 20
Rth j-a = 30
Rth j-a = 40
60
40
C/W
C/W
C/W
C/W
20
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
2
CPR3EL Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxDA3547-Sxxx00
Radiant Flux (mW)
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxDA3547-Sxxxxx) orders may be filled with any or all bins (CxxxDA3547-xxxxx)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA.
C450DA3547-S07600
C450DA3547-0313
C450DA3547-0314
C450DA3547-0315
C450DA3547-0316
C450DA3547-0309
C450DA3547-0310
C450DA3547-0311
C450DA3547-0312
C450DA3547-0305
C450DA3547-0306
C450DA3547-0307
C450DA3547-0308
88
82
76
445
447.5
450
Dominant Wavelength (nm)
452.5
455
C460DA3547-S07600
C460DA3547-0313
C460DA3547-0314
C460DA3547-0315
C460DA3547-0316
C460DA3547-0309
C460DA3547-0310
C460DA3547-0311
C460DA3547-0312
C460DA3547-0305
C460DA3547-0306
C460DA3547-0307
C460DA3547-0308
88
82
76
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
3
CPR3EL Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light Int
Characteristic Curves
150%
100%
50%
0%
0
50
100
150
If (mA)
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
150
150
Dominant Wavelength
If (mA)Shift (nm)
2
If (mA)
100
50
100
1
0
50
-1
0
-2 0
0
0
1
2
3
4
1
0
5
2
50
Vf (V)
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
300%
3
4
100
Vf (V)
If (mA)
5
150
Relative Intensity vs. Wavelength
100
80
80
200%
Relative Intensity
Relative
RelativeIntensity
Light Intensity
100
250%
60
150%
100%
40
40
20
50%
20
0%
0
0
0
60
350
50
400
100
450
If (mA) 500
150
550
350
400
600
450
500
550
600
Wavelength (nm)
Wavelength (nm)
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
2
1
0
-1
-2
0
50
100
150
If (mA)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
4
CPR3EL Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
5
CPR3EL Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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