Direct Attach DA3547™ LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA3547 LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpaddown design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS • • Rectangular LED RF Performance – 450 & 460 nm – 76 mW min Large LCD Backlighting – Television • High Reliability - Eutectic Attach • General Illumination • Low Forward Voltage (Vf) – 3.1 V Typical at 50 mA • Medium LCD Backlighting • Maximum DC Forward Current – 150 mA – Portable PCs • 1000-V ESD Threshold Rating – Monitors • InGaN Junction-Down Design for Improved Thermal • LED Video Displays Management • White LEDs • No Wire Bonds Required CxxxDA3547-Sxxx00 Chip Diagram Top View Die Cross Section .A CPR3EL Rev Data Sheet: DA3547 LED 350 x 470 μm Bottom View Anode (+) 296 x 90 μm Gap 90 μm Cathode (-) 296 x 236 μm t = 155 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1,3, & 4 CxxxDA3547-Sxxx00 DC Forward Current 150 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 200 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 50 mA Part Number Note 3 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA3547-Sxxx00 2.8 3.1 3.4 2 20 C460DA3547-Sxxx00 2.8 3.1 3.4 2 21 Mechanical Specifications CxxxDA3547-Sxxx00 Description Dimension Tolerance P-N Junction Area (μm) 296 x 416 ±35 Chip Bottom Area (μm) 350 x 470 ±35 Chip Top Area (μm) 200 x 320 ±35 Chip Thickness (μm) 155 ±15 AuSn Bond Pad Width – Anode (um) 90 ±15 AuSn Bond Pad Length – Anode (um) 296 ±35 AuSn Bond Pad Width – Cathode (um) 236 ±35 AuSn Bond Pad Length – Cathode (um) 296 ±35 90 ±15 3 ±0.5 Bond Pad Gap (μm) AuSn Bond Pad Thickness (μm) Notes: 1. 2. 3. 4. Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 160 Maximum Forward Current (mA) 140 120 100 80 Rth j-a = 10 Rth j-a = 20 Rth j-a = 30 Rth j-a = 40 60 40 C/W C/W C/W C/W 20 0 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 2 CPR3EL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxDA3547-Sxxx00 Radiant Flux (mW) Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA3547-Sxxxxx) orders may be filled with any or all bins (CxxxDA3547-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA. C450DA3547-S07600 C450DA3547-0313 C450DA3547-0314 C450DA3547-0315 C450DA3547-0316 C450DA3547-0309 C450DA3547-0310 C450DA3547-0311 C450DA3547-0312 C450DA3547-0305 C450DA3547-0306 C450DA3547-0307 C450DA3547-0308 88 82 76 445 447.5 450 Dominant Wavelength (nm) 452.5 455 C460DA3547-S07600 C460DA3547-0313 C460DA3547-0314 C460DA3547-0315 C460DA3547-0316 C460DA3547-0309 C460DA3547-0310 C460DA3547-0311 C460DA3547-0312 C460DA3547-0305 C460DA3547-0306 C460DA3547-0307 C460DA3547-0308 88 82 76 455 457.5 460 462.5 465 Dominant Wavelength (nm) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 3 CPR3EL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light Int Characteristic Curves 150% 100% 50% 0% 0 50 100 150 If (mA) These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Forward Current vs. Forward Voltage Wavelength Shift vs. Forward Current 150 150 Dominant Wavelength If (mA)Shift (nm) 2 If (mA) 100 50 100 1 0 50 -1 0 -2 0 0 0 1 2 3 4 1 0 5 2 50 Vf (V) Relative Intensity vs. Forward Current Relative Intensity vs. Wavelength 300% 3 4 100 Vf (V) If (mA) 5 150 Relative Intensity vs. Wavelength 100 80 80 200% Relative Intensity Relative RelativeIntensity Light Intensity 100 250% 60 150% 100% 40 40 20 50% 20 0% 0 0 0 60 350 50 400 100 450 If (mA) 500 150 550 350 400 600 450 500 550 600 Wavelength (nm) Wavelength (nm) Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) 2 1 0 -1 -2 0 50 100 150 If (mA) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 4 CPR3EL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc. 5 CPR3EL Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com