ASI ASI10674 Npn silicon rf power transistor Datasheet

ULBM0.5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .205 4L PILL
The ASI ULBM0.5 is Designed for
D
FEATURES:
•
•
• Omnigold™ Metalization System
A
C
B
MAXIMUM RATINGS
F
IC
0.4 A
VCBO
28 V
VCEO
12 V
G
4.0 V
VEBO
O
PDISS
2.5 W @ TC = 25 C
TJ
-65 OC to +200 OC
O
TSTG
-65 C to +150 C
θ JC
70 OC/W
SYMBOL
DIM
MINIMUM
A
.976 / 24.800
1.00 / 25.400
B
.976 / 24.800
1.00 / 25.400
C
.028 / 0.700
MAXIMUM
inches / mm
inches / mm
.031 / 0.800
.138 / 3.500
D
O
CHARACTERISTICS
E
H
E
.106 / 2.700
.139 / 3.400
F
.039 / 1.000
.047 / 1.200
G
.004 / 0.100
.006 / 0.150
H
.200 / 5.100
.208 / 5.300
ORDER CODE: ASI10674
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 25 mA
12
V
BVCES
IC = 10 mA
28
V
BVEBO
IE = 5.0 mA
4.0
V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
PG
VCC = 12.5 V
IC = 150 mA
20
f = 1.0 MHz
POUT = 0.5 W
f = 470 MHz
13
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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4.0
pF
dB
REV. A
1/1
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