ATMEL AT28BV16 16k 2k x 8 battery-voltage cmos e2prom Datasheet

AT28BV16
Features
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•
•
•
•
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2.7 to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
16K (2K x 8)
Battery-Voltage
CMOS
E2PROM
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
(continued)
Pin Configurations
Pin Name
Function
A0 - A10
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PDIP, SOIC
Top View
TSOP
Top View
AT28BV16
PLCC
Top View
0308A
2-119
Description (Continued)
internally, freeing the microprocessor address and data
bus for other operations. Following the initiation of a write
cycle, the device will go to a busy state and automatically
clear and write the latched data using an internal control
timer. The end of a write cycle can be determined by
DATA polling of I/O7. Once the end of a write cycle has
been detected, a new access for a read or a write can
begin.
The CMOS technology offers fast access times of 250 ns
at low power dissipation. When the chip is deselected the
standby current is less than 50 µA.
Atmel’s 28BV16 has additional features to ensure high
quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of
E2PROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
2-120
AT28BV16
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
AT28BV16
Device Operation
READ: The AT28BV16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE: Writing data into the AT28BV16 is similar
to writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a selfclear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling
operation.
READY/BUSY (TSOP only): READY/BUSY is an open
drain output; it is pulled low during the internal write cycle
and released at the completion of the write cycle.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways. (a) Vcc
sense— if Vcc is below 2.0V (typical) the write function is
inhibited. (b) Vcc power on delay— once Vcc has reached
2.0V the device will automatically time out 5 ms (typical)
before allowing a byte write. (c) Write Inhibit— holding any
one of OE low, CE high or WE high inhibits byte write cycles.
DEVICE IDENTIFICATION: A n ex t r a 32- bytes of
E2PROM memory are available to the user for device
identification. By raising A9 to 12 ± 0.5V and using address locations 7E0H to 7FFH the additional bytes may be
written to or read from in the same manner as the regular
memory array.
DATA POLLING: The AT28BV16 provides DATA
POLLING to signal the completion of a write cycle. During
a write cycle, an attempted read of the data being written
results in the complement of that data for I/O7 (the other
outputs are indeterminate). When the write cycle is finished, true data appears on all outputs.
2-121
DC and AC Operating Range
Com.
Operating
Temperature (Case)
Ind.
VCC Power Supply
AT28BV16-25
AT28BV16-30
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V
2.7V to 3.6V
Operating Modes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
VIH
(1)
Write
(2)
Standby/Write Inhibit
X
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
X
High Z
High Z
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
ILI
Input Load Current
VIN = 0V to VCC + 1.0V
5
µA
ILO
Output Leakage Current
VI/O = 0V to VCC
5
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1.0V
50
µA
ICC
VCC Active Current AC
f = 5 MHz; IOUT = 0 mA; CE = VIL
8
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
2-122
AT28BV16
2.0
V
IOL = 1 mA
0.3
V
IOL = 2 mA for RDY/BUSY
0.3
V
IOH = -100 µA
2.0
V
AT28BV16
AC Read Characteristics
AT28BV16-25
Symbol
Parameter
tACC
Min
Max
AT28BV16-30
Min
Max
Units
Address to Output Delay
250
300
ns
tCE
(1)
CE to Output Delay
250
300
ns
tOE
(2)
OE to Output Delay
100
100
ns
tDF
(3, 4)
CE or OE High to Output Float
0
55
ns
Output Hold from OE, CE or
Address, whichever occurred first
0
tOH
55
0
0
ns
AC Read Waveforms (1, 2, 3, 4)
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 20 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
Typ
Max
Units
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
Conditions
1. This parameter is characterized and is not 100% tested.
2-123
AC Write Characteristics
Symbol
Parameter
Min
tAS, tOES
Address, OE Set-up Time
10
ns
tAH
Address Hold Time
100
ns
tWP
Write Pulse Width (WE or CE)
150
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
10
ns
tCS, tCH
CE to WE and WE to CE Set-up and Hold Time
0
ns
tWC
Write Cycle Time
3.0
ms
tDB
Time to Device Busy
50
ns
AC Write Waveforms
WE Controlled
CE Controlled
2-124
AT28BV16
Max
1000
Units
ns
AT28BV16
Data Polling Characteristics (1)
Symbol
Parameter
Min
Typ
Max
Units
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay (2)
tWR
Write Recovery Time
ns
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Characteristics.
Data Polling Waveforms
2-125
Ordering Information (1)
tACC
ICC (mA)
Ordering Code
Package
0.05
AT28BV16-25TC
AT28BV16-25JC
AT28BV16-25PC
AT28BV16-25SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
8
0.05
AT28BV16-25TI
AT28BV16-25JI
AT28BV16-25PI
AT28BV16-25SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
8
0.05
AT28BV16-30TC
AT28BV16-30JC
AT28BV16-30PC
AT28BV16-30SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
8
0.05
AT28BV16-30TI
AT28BV16-30JI
AT28BV16-30PI
AT28BV16-30SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
(ns)
Active
Standby
250
8
300
Note:
1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
Speed
Package and Temperature Combinations
AT28BV16
25
JC, JI, PC, PI, SC, SI, TC, TI
AT28BV16
30
JC, JI, PC, PI, SC, SI, TC, TI
Package Type
28T
28 Lead, Plastic Thin Small Outline Package (TSOP)
32J
32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
24P6
24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
24S
24 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
2-126
AT28BV16
Operation Range
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