MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead(Pb)-Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Symbol V CE O V CB O VE B O IC 5088LT1 30 35 5089LT1 25 30 Unit Vdc Vdc Vdc m Adc 4.5 50 Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient Total Device Dis s ipation Alum ina S ubs trate, (2 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient J unction and S torage, Tem perature Symbol Max Unit PD 225 1.8 R JA 556 PD 300 2.4 R JA 417 m W/ C C/ W T J, Ts tg -5 5 to +1 5 0 C mW m W/ C C/ W mW Device Marking MMBT5088=1Q ; MMBT5089=1R Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Max Unit V (B R )CE O 30 25 - V Off Characteristics Collent-Emitter Breakdown Voltage IC = 1.0mA, IB=0 MMBT5088 IC = 1.0mA, IB=0 MMBT5089 Collent-Base Breakdown Voltage IC = 100µA, IE=0 IC = 100µA, IE=0 Collent Cutoff Current VCB = 20V, IE=0 VCB = 15V, IE=0 MMBT5088 MMBT5089 V (B R )CB O 35 30 - V MMBT5088 MMBT5089 I CB O - 50 50 nA Emitte Cutoff Current VEB(off) = 3.0V, IC=0 VEB(off) = 4.5V, IC=0 MMBT5088 MMBT5089 IE B O - 50 100 nA 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw 1/5 13-Jan-06 MMBT5088 MMBT5089 Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued) Characteristics Symbol Min Max hFE(1) 300 400 350 450 300 400 900 1200 - Unit On Characteristics DC Current Gain VCE = 5.0V, IC = 100µA VCE= 5.0V, IC= 1.0mA VCE= 5.0V, IC= 10mA MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 hFE(2) hFE(3) - Collector-Emitter Saturation Voltage IC = 100mA, IB = 1.0mA VCE(sat) - 0.5 V Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA VBE(sat) - 0.8 V fT 50 - MHz Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded Ccb - 4.0 pF Emitter-Base Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded Ceb - 10 pF MMBT5088 MMBT5089 hfe 350 450 1400 1800 MMBT5088 MMBT5089 NF - 3.0 2.0 Small-signal Characteristics Current-Gain-Bandwidth Product VCE= 5.0V, IC = 500µA, f=20MHz) Small-Signal Current Gain VCE= 5.0V, IC=1.0 mA, f=1.0 kHz Noise Figure VCE = 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz - dB RS in ~ IDEAL TRANSISTOR en Fig 1.Transistor Noise Model WEITRON http://www.weitron.com.tw 2/5 13-Jan-06 MMBT5088 MMBT5089 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 20 R S~ ~0 I C = 10 mA 3.0mA 10 7.0 e n , NOISE VOLTAGE (nV) e n , NOISE VOLTAGE (nV) BANDWIDTH=1.0Hz 1.0mA 5.0 3.0 300µA 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 1.0mA 300µA 0.5 100µA 0.3 0.2 0.1 NF, NOISE FIGURE (dB) I n , NOISE CURRENT (pA) 3.0mA 1.0 0.7 10µA R S~ ~0 10 20 7.0 10kHz 1.0kHz 5.0 100kHz 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I C=10mA 2.0 100Hz I C , COLLECTOR CURRENT (mA) BANDWIDTH=1.0Hz 3.0 f = 10Hz 10 Fig 3. Effects of Collector Current Fig 2. Effects of Frequency 10 R S~ ~0 3.0 20k 50k100k f, FREQUENCY (Hz) 7.0 5.0 BANDWIDTH=1.0Hz 20 30µA 16 BANDWIDTH=10 Hz to15.7 kHz 12 I C =1.0 mA 500µA 8.0 100µA 10µA 4.0 0 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k R S , SOURCE RESISTANCE (OHMS) f, FREQUENCY (Hz) Fig 5. Wideband Noise Figure Fig 4. Noise Current 300 200 20 BANDWIDTH=1.0Hz I C =10mA 100µA 100 70 NF, NOISE FIGURE (dB) V T , TOTAL NOISE VOLTAGE (nV) 100 Hz NOISE DATA 3.0mA 50 1.0mA 30 300µA 20 10 7.0 30µA 10µA I C = 10mA 16 1.0mA 12 300µA 8.0 100µA 30µA 4.0 5.0 3.0 3.0mA 10µA BANDWIDTH=1.0Hz 0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Fig 7. Noise Figure Fig 6. Total Noise Voltage WEITRON http://www.weitron.com.tw 10 3/5 13-Jan-06 h FE, DC CURRENT GAIN (NORMALIZED) MMBT5088 MMBT5089 4.0 3.0 V CE =5.0 V T A=125°C 2.0 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) Fig 8. DC Current Gain 1.0 V, VOLTAGE (VOLTS) T J =25°C 0.8 0.6 V BE @V CE = 5.0V 0.4 0.2 V CE(sat) 0 0.01 0.02 @ I C /I B =10 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –0.4 –0.8 –1.2 T J=25°C to 125°C –1.6 –2.0 –55°C to25°C –0.4 0.01 0.02 0.05 I C , COLLECTOR CURRENT (mA) C ib C eb 0.3 C cb 0.2 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) T J = 25°C 0.4 WEITRON http://www.weitron.com.tw 5.0 10 20 50 100 500 300 200 100 V 70 50 CE = 5.0 V T J = 25°C 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Fig 11. Capacitance 1.0 2.0 Fig 10. Temperature Coefficients 0.8 C ob 0.5 I C , COLLECTOR CURRENT (mA) Fig 9. “On” Voltages 0.6 0.1 0.2 Fig 12. Current–Gain - Bandwidth Product 4/5 13-Jan-06 MMBT5088 MMBT5089 SOT-23 Package Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 13-Jan-06