Renesas CT20VSL-8 Strobe flasher use Datasheet

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April 1st, 2010
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April 1, 2003
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20VSL-8
STROBE FLASHER USE
CT20VSL-8
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.5MAX.
10.5MAX.
0
+0.3
–0
(1.5)
3.0 +0.3
–0.5
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
1.3
1
5
0.5
2.6 ± 0.4
4.5
0.8
q w e
wr
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
q
¡VCES ............................................................................... 400V
¡ICM ................................................................................... 130A
e
TO-220S
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VCES
VGES
VGEM
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 10s
ICM
Tj
Tstg
Collector current (Pulsed)
Junction temperature
Storage temperature
See figure 1
ELECTRICAL CHARACTERISTICS
Ratings
Unit
400
±15
±16
V
V
V
130
–40 ~ +150
–40 ~ +150
A
°C
°C
(Tj = 25°C)
Symbol
Parameter
V(BR)CES
ICES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IGES
VGE(th)
Gate-emitter leakage current
Gate-emitter threshold voltage
Test conditions
Limits
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
Min.
450
—
Typ.
—
—
Max.
—
10
VGE = ±16V, VCE = 0V
VCE = 10V, IC = 1mA
—
0.5
—
—
±0.1
2.0
Unit
V
µA
µA
V
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20VSL-8
STROBE FLASHER USE
PULSE COLLECTOR CURRENT ICM (A)
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
160
CM = 400µF
120
< 50°C
TC =
80
40
< 70°C
TC =
0
0
4
8
12
16
GATE-EMITTER VOLTAGE VGE (V)
Figure 1
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
CM
+
–
Vtrig
VCM
IGBT GATE VG
VOLTAGE
RG
VCE
Xe TUBE
CURRENT
VG
Ixe
IGBT
RECOMMEND CONDITION
MAXIMUM CONDITION
VCM = 330V
IP = 120A
CM = 300µF
VGE = 12V
350V
130A
400µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 0.5A.
(In general, it is satisfied if RG ≥ 47Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 130A : full luminescence condition) of main condenser (CM=400µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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