CPH6429
CPH6429
Ordering number : ENN8081
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
60
V
2
A
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
PD
Mounted on a ceramic board (1200mm2✕0.8mm)
V
±10
8
A
1.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
ID=1mA, VGS=0
Ratings
min
typ
Unit
max
60
V
VDS=60V, VGS=0
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
yfs
RDS(on)1
VDS=10V, ID=1A
1.8
1
µA
±10
µA
1.3
3.6
V
S
ID=1A, VGS=4V
170
220
mΩ
RDS(on)2
Ciss
ID=1A, VGS=2.5V
190
270
mΩ
VDS=20V, f=1MHz
325
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
29
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
21
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
11
ns
tr
See specified Test Circuit
17
ns
Static Drain-to-Source On-State Resistance
Input Capacitance
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
See specified Test Circuit
40
ns
tf
See specified Test Circuit
27
ns
Marking : ZF
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Continued on next page.
www.onsemi.com
Rev.0 I Page
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Publication Order Number:
CPH6429/D
CPH6429
Continued from preceding page.
Parameter
Symbol
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
Diode Forward Voltage
VSD
IS=2A, VGS=0
Package Dimensions
unit : mm
2151A
5
min
nC
nC
1.2
V
ID=1A
RL=30Ω
VOUT
0.2
0.6
VIN
2.8
D
PW=10µs
D.C.≤1%
0.6
1.6
nC
1.1
VDD=30V
4V
0V
4
G
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
0.2
3
0.95
4.2
0.86
VIN
0.15
0.7
0.9
2
Unit
max
1.1
0.05
1
typ
Switching Time Test Circuit
2.9
6
Ratings
Conditions
0.4
CPH6429
P.G
50Ω
S
SANYO : CPH6
ID -- VDS
3.5
0.8
0.6
2.5
2.0
1.5
1.0
Ta=
2
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
300
200
100
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
1.0
10
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
3.0
IT06813
RDS(on) -- Ta
400
Ta=25°C
ID=1.0A
0
0.5
IT06812
RDS(on) -- VGS
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
5°C
0.4
0.2
75°C
VGS=1.5V
3.0
--25°
C
1.0
2.0
1.2
V
V
2.5
V
Drain Current, ID -- A
3.0
5.0
1.4
6.0
Drain Current, ID -- A
1.6
VDS=10V
V
V
4.0
1.8
ID -- VGS
4.0
3.5
V
V
2.0
350
300
.5V
250
V
A,
=1
ID
200
=2
GS
A,
=1
ID
150
.0V
=4
V GS
100
50
0
--60
IT06814
Rev.0 I Page 2 of 4 I www.onsemi.com
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT06815
CPH6429
yfs -- ID
7
VGS=0
3
5
2
-25
=Ta
2
1.0
°C
C
25°
°C
75
7
5
3
1.0
7
5
Ta=
75°
C
25°
C
--25
°C
3
3
2
0.1
7
5
3
2
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Drain Current, ID -- A
0.01
0.2
5
0.4
0.8
1.0
1.2
IT06817
Ciss, Coss, Crss -- VDS
1000
VDD=30V
VGS=4V
7
0.6
Diode Forward Voltage, VSD -- V
IT06816
SW Time -- ID
100
f=1MHz
7
5
Ciss
5
td(off)
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
IF -- VSD
7
5
VDS=10V
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
10
3
tf
2
tr
td(on)
10
3
2
100
7
5
Coss
Crss
3
2
7
10
7
5
0.1
2
3
5
7
2
1.0
3
Drain Current, ID -- A
Drain Current, ID -- A
1.5
2.0
2.5
3.0
3.5
4.0
Total Gate Charge, Qg -- nC
4.5
IDP=8A
ID=2A
3
2
Operation in this area
is limited by RDS(on).
0.1
7
5
0.01
0.01
2 3
IT06820
1.6
M
1.4
ou
1.2
nt
ed
on
1.0
ac
er
am
ic
0.8
0.6
bo
ar
d
(1
20
0.4
0m
m2
✕
0.
0.2
8m
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
<10µs
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm)
PD -- Ta
1.8
30
IT06819
s
0µ
1.0
25
ASO
1.0
7
5
3
2
0.5
20
DC
1
15
s
1m
)
°C
s
25
m
a=
s
10
(T
0m
on
10
ati
er
op
3
2
2
10
10
10
7
5
3
0
5
Drain-to-Source Voltage, VDS -- V
VDS=30V
ID=2.0A
0
Allowable Power Dissipation, PD -- W
0
VGS -- Qg
4
Gate-to-Source Voltage, VGS -- V
5
IT06818
160
IT07337
Rev.0 I Page 3 of 4 I www.onsemi.com
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5 7 100
IT07336
CPH6429
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* 2/ / 1 CPH6429/D