Freescale C1825C564J5GAC N-channel enhancement-mode lateral mosfet Datasheet

Document Number: MRF5S4140H
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S4140HR3
MRF5S4140HSR3
Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applications in 28-volt base station equipment.
• Typical Single- Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts,
IDQ = 1250 mA, Pout = 28 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
465 MHz, 28 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S4140HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S4140HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
427
2.4
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73°C, 140 W CW
Case Temperature 74°C, 28 W CW
RθJC
0.41
0.47
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test)
VGS(Q)
3
4
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.42 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
gfs
—
6.2
—
S
Crss
—
2.3
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. N - CDMA,
f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Gps
20
21
23
dB
ηD
28.5
30
—
%
ACPR
—
- 47.6
- 45
dBc
IRL
—
- 14
-9
dB
1. Part internally input matched.
MRF5S4140HR3 MRF5S4140HSR3
2
RF Device Data
Freescale Semiconductor
B2
VBIAS
+
C16 C17
C18
C8
B1
VSUPPLY
+
+
+
+
C19
C20
C21
C22
L1
Z9
Z10
RF
INPUT
Z1
Z2
R1
C3
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13 Z14
Z15
Z16
Z17
C7
Z8
Z18
Z19
RF
OUTPUT
C14
C9
C10
C11
C12
C13
C15
C1
C2
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C5
C6
DUT
0.402″ x 0.080″ Microstrip
1.266″ x 0.080″ Microstrip
0.211″ x 0.220″ Microstrip
0.139″ x 0.220″ Microstrip
0.239″ x 0.220″ Microstrip
0.040″ x 0.640″ Microstrip
0.080″ x 0.640″ Microstrip
0.276″ x 0.640″ Microstrip
1.000″ x 0.226″ Microstrip
0.498″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.125″ x 0.220″ Microstrip
0.324″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
0.171″ x 0.080″ Microstrip
0.377″ x 0.080″ Microstrip
0.358″ x 0.080″ Microstrip
0.361″ x 0.080″ Microstrip
0.131″ x 0.080″ Microstrip
0.277″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460 - 470 MHz
Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460 - 470 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair- Rite
C1, C14
120 pF Chip Capacitors
100B121JP500X
ATC
C2, C13
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
18 pF Chip Capacitor
100B180JP500X
ATC
C4
30 pF Chip Capacitor
100B300JP500X
ATC
C5
24 pF Chip Capacitor
100B240JP500X
ATC
C6, C7
13 pF Chip Capacitors
100B130JP500X
ATC
C8
0.02 μF, 50 V Chip Capacitor
200B203MW50B
ATC
C9, C10
22 pF Chip Capacitors
100B220JP500X
ATC
C11
1.0 pF Chip Capacitor
100B1R0JP500X
ATC
C12
5.6 pF Chip Capacitor
100B5R6JP500X
ATC
C15
1.5 pF Chip Capacitor
100B1R5JP500X
ATC
C16
47 pF Chip Capacitor
100B47JP500X
ATC
C17
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C18, C19, C20, C21
10 μF, 35 V Tantalum Chip Capacitors
T491D106K035AS
Kemet
C22
470 μF, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi - Con
L1
39 nH Inductor
1812SMS- 39N
Coilcraft
R1
100 Ω, 1/4 W Chip Resistor (1210)
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
3
C18
C22
+
450 MHz
Rev. 0
Ver. B
B2
C8
C19 C20 C21
C17
B1
C7
C1
C16
C3
R1
L1
C10
C2
C5 C6
CUT OUT AREA
C4
C9
C11
C12
C14
C15
C13
Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460 - 470 MHz
MRF5S4140HR3 MRF5S4140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 460 - 470 MHz
21.5
32
20
29
ηD
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
19.5
19
18.5
18
26
−1
−40
−45
−50
ACPR
17.5
−55
IRL
−60
17
ALT1
16.5
−65
−70
490
16
430
440
450
460
470
480
−3
−5
−7
−9
−11
−13
IRL, INPUT RETURN LOSS (dB)
35
Gps
20.5
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
21
ηD, DRAIN
EFFICIENCY (%)
38
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 28 Watts Avg.
50
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
40
45
Gps, POWER GAIN (dB)
19.8
ηD
19.3
18.8
18.3
17.8
35
−35
−40
ACPR
−45
17.3
16.8
−50
IRL
16.3
−55
ALT1
15.8
430
440
450
460
470
480
−60
490
−2
−4
−6
−8
−10
−12
−14
IRL, INPUT RETURN LOSS (dB)
Gps
ACPR (dBc), ALT1 (dBc)
20.3
ηD, DRAIN
EFFICIENCY (%)
55
20.8
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 56 Watts Avg.
23
−10
Gps, POWER GAIN (dB)
22
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1850 mA
1550 mA
21
1250 mA
20
950 mA
650 mA
19
18
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−15
−20
−25
1850 mA
−30
1550 mA
IDQ = 650 mA
−35
−40
950 mA
1250 mA
−45
17
6
100
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
5
−25
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS — 460 - 470 MHz
VDD = 28 Vdc, IDQ = 1250 mA, f1 = 465 MHz
f2 = 467.5 MHz, Two−Tone Measurements
−30
−35
3rd Order
−40
−45
5th Order
−50
−55
7th Order
−60
10
0
−10
−20
−30
3rd Order
−40
5th Order
7th Order
−50
200
100
VDD = 28 Vdc, Pout = 100 W (PEP)
IDQ = 1250 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 465 MHz
1
0.1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Pout, OUTPUT POWER (dBm)
60
60
P6dB = 53.57 dBm (227 W)
Ideal
56
P3dB = 52.99 dBm (198 W)
P1dB = 52.21 dBm (166 W)
52
Actual
48
VDD = 28 Vdc, IDQ = 1250 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 465 MHz
44
40
19
23
27
31
35
39
Pin, INPUT POWER (dBm)
50
−35
VDD = 28 Vdc, IDQ = 1250 mA, f = 465 MHz
N−CDMA IS−95 (Pilot, Sync, Paging
Traffic Codes 8 Through 13)
40
25_C
ACPR
−43
−30_C
−51
30
Gps
85_C
TC = −30_C
−59
20
25_C
85_C
ηD
10
25_C
25_C
ALT1
85_C
0
1
−67
−30_C
10
−75
60
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 460 - 470 MHz
80
VDD = 28 Vdc
IDQ = 1250 mA
f = 465 MHz
25
24
Gps, POWER GAIN (dB)
70
−30_C
23
50
Gps
TC = −30_C
22
60
25_C
85_C
ηD
40
25_C
21
30
20 85_C
20
19
10
0
300
18
2
10
ηD, DRAIN EFFICIENCY (%)
26
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21.5
IDQ = 1250 mA
f = 465 MHz
Gps, POWER GAIN (dB)
21
20.5
20
19.5
19
32 V
18.5
28 V
18
VDD = 12 V
24 V
16 V
20 V
17.5
0
50
100
150
200
250
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
7
f = 490 MHz
Zo = 2 Ω
Zload
f = 490 MHz
f = 440 MHz
Zsource
f = 440 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
440
0.359 - j1.19
1.35 - j0.870
445
0.389 - j1.11
1.31 - j0.743
450
0.379 - j1.03
1.34 - j0.641
455
0.360 - j0.959
1.32 - j0.539
460
0.355 - j0.873
1.31 - j0.420
465
0.352 - j0.773
1.30 - j0.274
470
0.350 - j0.710
1.29 - j0.173
475
0.350 - j0.628
1.28 - j0.044
480
0.356 - j0.540
1.29 + j0.090
485
0.355 - j0.473
1.29 + j0.195
490
0.345 - j0.388
1.28 + j0.313
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance — 460 - 470 MHz
MRF5S4140HR3 MRF5S4140HSR3
8
RF Device Data
Freescale Semiconductor
B2
VBIAS
+
C16 C17
C18
C8
B1
VSUPPLY
+
+
+
+
C19
C20
C21
C22
L1
Z9
Z10
RF
INPUT
Z1
Z2
R1
C3
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13 Z14
Z15
Z16
Z17
C7
Z8
Z18
Z19
RF
OUTPUT
C14
C9
C10
C11
C12
C13
C15
C1
C2
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C5
C6
DUT
0.402″ x 0.080″ Microstrip
1.266″ x 0.080″ Microstrip
0.211″ x 0.220″ Microstrip
0.139″ x 0.220″ Microstrip
0.239″ x 0.220″ Microstrip
0.040″ x 0.640″ Microstrip
0.080″ x 0.640″ Microstrip
0.276″ x 0.640″ Microstrip
1.000″ x 0.226″ Microstrip
0.498″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.125″ x 0.220″ Microstrip
0.324″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
0.171″ x 0.080″ Microstrip
0.377″ x 0.080″ Microstrip
0.358″ x 0.080″ Microstrip
0.361″ x 0.080″ Microstrip
0.131″ x 0.080″ Microstrip
0.277″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic — 420 - 430 MHz
Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 420 - 430 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair- Rite
C1, C14
120 pF Chip Capacitors
100B121JP500X
ATC
C2, C13
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
18 pF Chip Capacitor
100B180JP500X
ATC
C4
39 pF Chip Capacitor
100B390JP500X
ATC
C5
24 pF Chip Capacitor
100B240JP500X
ATC
C6, C7
13 pF Chip Capacitors
100B130JP500X
ATC
C8
0.02 μF, 50 V Chip Capacitor
200B203MW50B
ATC
C9, C10
22 pF Chip Capacitors
100B220JP500X
ATC
C11
1.0 pF Chip Capacitor
100B1R0JP500X
ATC
C12
5.6 pF Chip Capacitor
100B5R6JP500X
ATC
C15
1.5 pF Chip Capacitor
100B1R5JP500X
ATC
C16
47 pF Chip Capacitor
100B47JP500X
ATC
C17
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C18, C19, C20, C21
10 μF, 35 V Tantalum Chip Capacitors
T491D106K035AS
Kemet
C22
470 μF, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi - Con
L1
39 nH Inductor
1812SMS- 39N
Coilcraft
R1
100 Ω, 1/4 W Chip Resistor (1210)
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
9
C18
C22
450 MHz
Rev. 0
Ver. A
B2
-
+
C8
C19 C20 C21
C17
B1
C7
C16
C3
C1
R1
L1
C10
C2
C5 C6
CUT OUT AREA
C4
C9
C11
C12
C14
C15
C13
Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout — 420 - 430 MHz
MRF5S4140HR3 MRF5S4140HSR3
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 420 - 430 MHz
21.7
29
Gps, POWER GAIN (dB)
21.1
20.8
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
Gps
20.5
20.2
27
25
−41
−47
19.9
ACPR
19.6
19.3
IRL
−59
ALT1
19
410
415
−53
420
425
430
435
−65
440
−5
−8
−11
−14
−17
IRL, INPUT RETURN LOSS (dB)
31
ηD
ACPR (dBc), ALT1 (dBc)
21.4
ηD, DRAIN
EFFICIENCY (%)
33
f, FREQUENCY (MHz)
Figure 16. Single - Carrier N - CDMA Broadband Performance
@ Pout = 28 Watts Avg.
21.5
42
Gps, POWER GAIN (dB)
20
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95 (Pilot
Sync, Paging, Traffic Codes 8 Through 13)
Gps
19.5
19
18.5
37
−35
−40
ACPR
18
39.5
−45
IRL
−50
17.5
−55
ALT1
17
16.5
410
415
420
425
430
435
−60
440
−4
−7
−10
−13
−16
−19
IRL, INPUT RETURN LOSS (dB)
ηD
20.5
ACPR (dBc), ALT1 (dBc)
44.5
ηD, DRAIN
EFFICIENCY (%)
47
21
f, FREQUENCY (MHz)
Figure 17. Single - Carrier N - CDMA Broadband Performance
@ Pout = 56 Watts Avg.
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
11
f = 450 MHz
f = 450 MHz
Zload
Zsource
f = 400 MHz
f = 400 MHz
Zo = 5 Ω
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
400
0.454 - j0.530
1.87 - j0.530
405
0.476 - j0.435
1.91 - j0.376
410
0.430 - j0.360
1.88 - j0.276
415
0.455 - j0.281
1.91 - j0.046
420
0.419 - j0.153
1.89 - j0.019
425
0.421 - j0.135
1.92 + j0.128
430
0.435 - j0.032
1.97 + j0.276
435
0.426 + j0.048
1.99 + j0.392
440
0.407 + j0.044
1.99 + j0.537
445
0.429 + j0.262
2.05 + j0.675
450
0.452 + j0.341
2.10 + j0.765
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 18. Series Equivalent Source and Load Impedance — 420 - 430 MHz
MRF5S4140HR3 MRF5S4140HSR3
12
RF Device Data
Freescale Semiconductor
B2
VBIAS
+
C14 C15
C16
C7
B1
+
+
+
+
C17
C18
C19
C20
VSUPPLY
L1
Z9
Z10
RF
INPUT
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
Z14
Z15
Z16
Z17
C6
Z8
Z18
RF
OUTPUT
C13
C8
C9
C10
C11
C12
C1
C2
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C4
C5
DUT
0.402″ x 0.080″ Microstrip
1.266″ x 0.080″ Microstrip
0.211″ x 0.220″ Microstrip
0.139″ x 0.220″ Microstrip
0.239″ x 0.220″ Microstrip
0.040″ x 0.640″ Microstrip
0.080″ x 0.640″ Microstrip
0.276″ x 0.640″ Microstrip
1.000″ x 0.226″ Microstrip
0.498″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
PCB
0.125″ x 0.220″ Microstrip
0.324″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
0.171″ x 0.080″ Microstrip
0.377″ x 0.080″ Microstrip
0.358″ x 0.080″ Microstrip
0.361″ x 0.080″ Microstrip
0.408″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic — 489 - 499 MHz
Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 489 - 499 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair- Rite
C1, C13
120 pF Chip Capacitors
100B121JP500X
ATC
C2
18 pF Chip Capacitor
100B180JP500X
ATC
C3, C4
24 pF Chip Capacitors
100B240JP500X
ATC
C5, C6
13 pF Chip Capacitors
100B130JP500X
ATC
C7
0.02 μF, 50 V Chip Capacitor
200B203MW50B
ATC
C8, C9
22 pF Chip Capacitors
100B220JP500X
ATC
C10
1.0 pF Chip Capacitor
100B1R0JP500X
ATC
C11
5.6 pF Chip Capacitor
100B5R6JP500X
ATC
C12
0.8- 8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C14
47 pF Chip Capacitor
100B47JP500X
ATC
C15
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C16, C17, C18, C19
10 μF, 35 V Tantalum Capacitors
T491D106K035AS
Kemet
C20
470 μF, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi - Con
L1
39 nH Inductor
1812SMS- 39N
Coilcraft
R1
100 Ω, 1/4 W Chip Resistor (1210)
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
13
C16
C20
450 MHz
Rev. 0
Ver. A
B2
-
+
C7
C17 C18 C19
C15
B1
C6
C2
C1
C14
R1
L1
C4 C5
CUT OUT AREA
C3
C9
C8
C10
C11
C13
C12
Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout — 489 - 499 MHz
MRF5S4140HR3 MRF5S4140HSR3
14
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 489 - 499 MHz
21.7
29
27
Gps
20.5
25
20.2
−45
19.9
ACPR
−50
IRL
−55
19.6
ALT1
19.3
−60
19
480
485
490
495
500
505
−65
510
−5
−8
−11
−14
−17
IRL, INPUT RETURN LOSS (dB)
ηD
20.8
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
21.1
31
ACPR (dBc), ALT1 (dBc)
21.4
33
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1250 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes
8 Through 13)
f, FREQUENCY (MHz)
Figure 21. Single - Carrier N - CDMA Broadband Performance
@ Pout = 28 Watts Avg.
22
42
39.5
20.5
20
37
Gps
−35
19.5
ACPR
19
−40
−45
18.5
IRL
18
−50
−55
ALT1
17.5
17
480
485
490
495
500
505
−60
510
−6
−8
−10
−12
−14
−16
IRL, INPUT RETURN LOSS (dB)
44.5
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
21
47
VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1250 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
ηD
ACPR (dBc), ALT1 (dBc)
21.5
f, FREQUENCY (MHz)
Figure 22. Single - Carrier N - CDMA Broadband Performance
@ Pout = 56 Watts Avg.
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
15
f = 519 MHz
Zo = 2 Ω
Zload
f = 519 MHz
f = 469 MHz
Zsource
f = 469 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
469
0.454 - j0.742
1.08 - j0.129
474
0.510 - j0.637
1.12 + j0.043
479
0.467 - j0.581
1.07 + j0.160
484
0.495 - j0.513
1.09 + j0.294
489
0.495 - j0.457
1.12 + j0.430
494
0.478 - j0.360
1.16 + j0.573
499
0.505 - j0.295
1.18 + j0.586
504
0.502 - j0.249
1.11 + j0.653
509
0.502 - j0.048
1.07 + j0.810
514
0.499 + j0.002
1.03 + j1.01
519
0.502 + j0.003
1.03 + j1.10
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 23. Series Equivalent Source and Load Impedance — 489 - 499 MHz
MRF5S4140HR3 MRF5S4140HSR3
16
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
1011
1010
109
108
90
100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 24. MTTF Factor versus Junction Temperature
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
17
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−70
−80
−90
0.0001
0
2
4
6
−60
8
10
1.2288 MHz
Channel BW
.. ..................................................
............
. . .
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
.... .
...................
.........
.....
...........
.........
. .............
...... . . ..
.
.
.
.
.
.
.
..............
.....
............
........
........ .
...
......
.........
......
.
.
.
..........
.
.
.
.
.
.
.
.
.
.........
............. .
.
.
.
..
.
.
.
.
..
.
.
.
.
..
....
.
−ACPR in 30 kHz
+ACPR in 30 kHz .................
.........
...............
.
.
............
................
...
.
.
.
.
.
Integrated BW
Integrated BW
..
.....
.............
........
......
..........
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 25. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 26. Single - Carrier N - CDMA Spectrum
MRF5S4140HR3 MRF5S4140HSR3
18
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
R
(INSULATOR)
bbb
N
T A
M
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
S
(LID)
ccc
H
T A
M
M
B
(LID)
B
M
(INSULATOR)
B
M
C
F
E
T
A
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF5S4140HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF5S4140HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
19
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MRF5S4140HR3 MRF5S4140HSR3
Document Number: MRF5S4140H
Rev. 2, 5/2006
20
RF Device Data
Freescale Semiconductor
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