Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28-volt base station equipment. • Typical Single- Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1250 mA, Pout = 28 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 465 MHz, 28 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S4140HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S4140HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 427 2.4 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 73°C, 140 W CW Case Temperature 74°C, 28 W CW RθJC 0.41 0.47 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S4140HR3 MRF5S4140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test) VGS(Q) 3 4 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.42 Adc) VDS(on) 0.1 0.2 0.3 Vdc gfs — 6.2 — S Crss — 2.3 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. N - CDMA, f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps 20 21 23 dB ηD 28.5 30 — % ACPR — - 47.6 - 45 dBc IRL — - 14 -9 dB 1. Part internally input matched. MRF5S4140HR3 MRF5S4140HSR3 2 RF Device Data Freescale Semiconductor B2 VBIAS + C16 C17 C18 C8 B1 VSUPPLY + + + + C19 C20 C21 C22 L1 Z9 Z10 RF INPUT Z1 Z2 R1 C3 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 C7 Z8 Z18 Z19 RF OUTPUT C14 C9 C10 C11 C12 C13 C15 C1 C2 C4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C5 C6 DUT 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.131″ x 0.080″ Microstrip 0.277″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460 - 470 MHz Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460 - 470 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite C1, C14 120 pF Chip Capacitors 100B121JP500X ATC C2, C13 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C3 18 pF Chip Capacitor 100B180JP500X ATC C4 30 pF Chip Capacitor 100B300JP500X ATC C5 24 pF Chip Capacitor 100B240JP500X ATC C6, C7 13 pF Chip Capacitors 100B130JP500X ATC C8 0.02 μF, 50 V Chip Capacitor 200B203MW50B ATC C9, C10 22 pF Chip Capacitors 100B220JP500X ATC C11 1.0 pF Chip Capacitor 100B1R0JP500X ATC C12 5.6 pF Chip Capacitor 100B5R6JP500X ATC C15 1.5 pF Chip Capacitor 100B1R5JP500X ATC C16 47 pF Chip Capacitor 100B47JP500X ATC C17 0.56 μF, 50 V Chip Capacitor C1825C564J5GAC Kemet C18, C19, C20, C21 10 μF, 35 V Tantalum Chip Capacitors T491D106K035AS Kemet C22 470 μF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi - Con L1 39 nH Inductor 1812SMS- 39N Coilcraft R1 100 Ω, 1/4 W Chip Resistor (1210) MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 3 C18 C22 + 450 MHz Rev. 0 Ver. B B2 C8 C19 C20 C21 C17 B1 C7 C1 C16 C3 R1 L1 C10 C2 C5 C6 CUT OUT AREA C4 C9 C11 C12 C14 C15 C13 Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 460 - 470 MHz 21.5 32 20 29 ηD VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.5 19 18.5 18 26 −1 −40 −45 −50 ACPR 17.5 −55 IRL −60 17 ALT1 16.5 −65 −70 490 16 430 440 450 460 470 480 −3 −5 −7 −9 −11 −13 IRL, INPUT RETURN LOSS (dB) 35 Gps 20.5 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 21 ηD, DRAIN EFFICIENCY (%) 38 f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 50 VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 40 45 Gps, POWER GAIN (dB) 19.8 ηD 19.3 18.8 18.3 17.8 35 −35 −40 ACPR −45 17.3 16.8 −50 IRL 16.3 −55 ALT1 15.8 430 440 450 460 470 480 −60 490 −2 −4 −6 −8 −10 −12 −14 IRL, INPUT RETURN LOSS (dB) Gps ACPR (dBc), ALT1 (dBc) 20.3 ηD, DRAIN EFFICIENCY (%) 55 20.8 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. 23 −10 Gps, POWER GAIN (dB) 22 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1850 mA 1550 mA 21 1250 mA 20 950 mA 650 mA 19 18 VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −15 −20 −25 1850 mA −30 1550 mA IDQ = 650 mA −35 −40 950 mA 1250 mA −45 17 6 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 5 −25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS — 460 - 470 MHz VDD = 28 Vdc, IDQ = 1250 mA, f1 = 465 MHz f2 = 467.5 MHz, Two−Tone Measurements −30 −35 3rd Order −40 −45 5th Order −50 −55 7th Order −60 10 0 −10 −20 −30 3rd Order −40 5th Order 7th Order −50 200 100 VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1250 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 465 MHz 1 0.1 10 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing Pout, OUTPUT POWER (dBm) 60 60 P6dB = 53.57 dBm (227 W) Ideal 56 P3dB = 52.99 dBm (198 W) P1dB = 52.21 dBm (166 W) 52 Actual 48 VDD = 28 Vdc, IDQ = 1250 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 465 MHz 44 40 19 23 27 31 35 39 Pin, INPUT POWER (dBm) 50 −35 VDD = 28 Vdc, IDQ = 1250 mA, f = 465 MHz N−CDMA IS−95 (Pilot, Sync, Paging Traffic Codes 8 Through 13) 40 25_C ACPR −43 −30_C −51 30 Gps 85_C TC = −30_C −59 20 25_C 85_C ηD 10 25_C 25_C ALT1 85_C 0 1 −67 −30_C 10 −75 60 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S4140HR3 MRF5S4140HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 460 - 470 MHz 80 VDD = 28 Vdc IDQ = 1250 mA f = 465 MHz 25 24 Gps, POWER GAIN (dB) 70 −30_C 23 50 Gps TC = −30_C 22 60 25_C 85_C ηD 40 25_C 21 30 20 85_C 20 19 10 0 300 18 2 10 ηD, DRAIN EFFICIENCY (%) 26 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21.5 IDQ = 1250 mA f = 465 MHz Gps, POWER GAIN (dB) 21 20.5 20 19.5 19 32 V 18.5 28 V 18 VDD = 12 V 24 V 16 V 20 V 17.5 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 7 f = 490 MHz Zo = 2 Ω Zload f = 490 MHz f = 440 MHz Zsource f = 440 MHz VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz Zsource W Zload W 440 0.359 - j1.19 1.35 - j0.870 445 0.389 - j1.11 1.31 - j0.743 450 0.379 - j1.03 1.34 - j0.641 455 0.360 - j0.959 1.32 - j0.539 460 0.355 - j0.873 1.31 - j0.420 465 0.352 - j0.773 1.30 - j0.274 470 0.350 - j0.710 1.29 - j0.173 475 0.350 - j0.628 1.28 - j0.044 480 0.356 - j0.540 1.29 + j0.090 485 0.355 - j0.473 1.29 + j0.195 490 0.345 - j0.388 1.28 + j0.313 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance — 460 - 470 MHz MRF5S4140HR3 MRF5S4140HSR3 8 RF Device Data Freescale Semiconductor B2 VBIAS + C16 C17 C18 C8 B1 VSUPPLY + + + + C19 C20 C21 C22 L1 Z9 Z10 RF INPUT Z1 Z2 R1 C3 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 C7 Z8 Z18 Z19 RF OUTPUT C14 C9 C10 C11 C12 C13 C15 C1 C2 C4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C5 C6 DUT 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.131″ x 0.080″ Microstrip 0.277″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic — 420 - 430 MHz Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 420 - 430 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite C1, C14 120 pF Chip Capacitors 100B121JP500X ATC C2, C13 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C3 18 pF Chip Capacitor 100B180JP500X ATC C4 39 pF Chip Capacitor 100B390JP500X ATC C5 24 pF Chip Capacitor 100B240JP500X ATC C6, C7 13 pF Chip Capacitors 100B130JP500X ATC C8 0.02 μF, 50 V Chip Capacitor 200B203MW50B ATC C9, C10 22 pF Chip Capacitors 100B220JP500X ATC C11 1.0 pF Chip Capacitor 100B1R0JP500X ATC C12 5.6 pF Chip Capacitor 100B5R6JP500X ATC C15 1.5 pF Chip Capacitor 100B1R5JP500X ATC C16 47 pF Chip Capacitor 100B47JP500X ATC C17 0.56 μF, 50 V Chip Capacitor C1825C564J5GAC Kemet C18, C19, C20, C21 10 μF, 35 V Tantalum Chip Capacitors T491D106K035AS Kemet C22 470 μF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi - Con L1 39 nH Inductor 1812SMS- 39N Coilcraft R1 100 Ω, 1/4 W Chip Resistor (1210) MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 9 C18 C22 450 MHz Rev. 0 Ver. A B2 - + C8 C19 C20 C21 C17 B1 C7 C16 C3 C1 R1 L1 C10 C2 C5 C6 CUT OUT AREA C4 C9 C11 C12 C14 C15 C13 Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 420 - 430 MHz 21.7 29 Gps, POWER GAIN (dB) 21.1 20.8 VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Gps 20.5 20.2 27 25 −41 −47 19.9 ACPR 19.6 19.3 IRL −59 ALT1 19 410 415 −53 420 425 430 435 −65 440 −5 −8 −11 −14 −17 IRL, INPUT RETURN LOSS (dB) 31 ηD ACPR (dBc), ALT1 (dBc) 21.4 ηD, DRAIN EFFICIENCY (%) 33 f, FREQUENCY (MHz) Figure 16. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 21.5 42 Gps, POWER GAIN (dB) 20 VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1250 mA, N−CDMA IS−95 (Pilot Sync, Paging, Traffic Codes 8 Through 13) Gps 19.5 19 18.5 37 −35 −40 ACPR 18 39.5 −45 IRL −50 17.5 −55 ALT1 17 16.5 410 415 420 425 430 435 −60 440 −4 −7 −10 −13 −16 −19 IRL, INPUT RETURN LOSS (dB) ηD 20.5 ACPR (dBc), ALT1 (dBc) 44.5 ηD, DRAIN EFFICIENCY (%) 47 21 f, FREQUENCY (MHz) Figure 17. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 11 f = 450 MHz f = 450 MHz Zload Zsource f = 400 MHz f = 400 MHz Zo = 5 Ω VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz Zsource W Zload W 400 0.454 - j0.530 1.87 - j0.530 405 0.476 - j0.435 1.91 - j0.376 410 0.430 - j0.360 1.88 - j0.276 415 0.455 - j0.281 1.91 - j0.046 420 0.419 - j0.153 1.89 - j0.019 425 0.421 - j0.135 1.92 + j0.128 430 0.435 - j0.032 1.97 + j0.276 435 0.426 + j0.048 1.99 + j0.392 440 0.407 + j0.044 1.99 + j0.537 445 0.429 + j0.262 2.05 + j0.675 450 0.452 + j0.341 2.10 + j0.765 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 18. Series Equivalent Source and Load Impedance — 420 - 430 MHz MRF5S4140HR3 MRF5S4140HSR3 12 RF Device Data Freescale Semiconductor B2 VBIAS + C14 C15 C16 C7 B1 + + + + C17 C18 C19 C20 VSUPPLY L1 Z9 Z10 RF INPUT R1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 C6 Z8 Z18 RF OUTPUT C13 C8 C9 C10 C11 C12 C1 C2 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C4 C5 DUT 0.402″ x 0.080″ Microstrip 1.266″ x 0.080″ Microstrip 0.211″ x 0.220″ Microstrip 0.139″ x 0.220″ Microstrip 0.239″ x 0.220″ Microstrip 0.040″ x 0.640″ Microstrip 0.080″ x 0.640″ Microstrip 0.276″ x 0.640″ Microstrip 1.000″ x 0.226″ Microstrip 0.498″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 PCB 0.125″ x 0.220″ Microstrip 0.324″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip 0.171″ x 0.080″ Microstrip 0.377″ x 0.080″ Microstrip 0.358″ x 0.080″ Microstrip 0.361″ x 0.080″ Microstrip 0.408″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic — 489 - 499 MHz Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 489 - 499 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite C1, C13 120 pF Chip Capacitors 100B121JP500X ATC C2 18 pF Chip Capacitor 100B180JP500X ATC C3, C4 24 pF Chip Capacitors 100B240JP500X ATC C5, C6 13 pF Chip Capacitors 100B130JP500X ATC C7 0.02 μF, 50 V Chip Capacitor 200B203MW50B ATC C8, C9 22 pF Chip Capacitors 100B220JP500X ATC C10 1.0 pF Chip Capacitor 100B1R0JP500X ATC C11 5.6 pF Chip Capacitor 100B5R6JP500X ATC C12 0.8- 8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C14 47 pF Chip Capacitor 100B47JP500X ATC C15 0.56 μF, 50 V Chip Capacitor C1825C564J5GAC Kemet C16, C17, C18, C19 10 μF, 35 V Tantalum Capacitors T491D106K035AS Kemet C20 470 μF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi - Con L1 39 nH Inductor 1812SMS- 39N Coilcraft R1 100 Ω, 1/4 W Chip Resistor (1210) MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 13 C16 C20 450 MHz Rev. 0 Ver. A B2 - + C7 C17 C18 C19 C15 B1 C6 C2 C1 C14 R1 L1 C4 C5 CUT OUT AREA C3 C9 C8 C10 C11 C13 C12 Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 489 - 499 MHz 21.7 29 27 Gps 20.5 25 20.2 −45 19.9 ACPR −50 IRL −55 19.6 ALT1 19.3 −60 19 480 485 490 495 500 505 −65 510 −5 −8 −11 −14 −17 IRL, INPUT RETURN LOSS (dB) ηD 20.8 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21.1 31 ACPR (dBc), ALT1 (dBc) 21.4 33 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1250 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) f, FREQUENCY (MHz) Figure 21. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 22 42 39.5 20.5 20 37 Gps −35 19.5 ACPR 19 −40 −45 18.5 IRL 18 −50 −55 ALT1 17.5 17 480 485 490 495 500 505 −60 510 −6 −8 −10 −12 −14 −16 IRL, INPUT RETURN LOSS (dB) 44.5 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21 47 VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1250 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ηD ACPR (dBc), ALT1 (dBc) 21.5 f, FREQUENCY (MHz) Figure 22. Single - Carrier N - CDMA Broadband Performance @ Pout = 56 Watts Avg. MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 15 f = 519 MHz Zo = 2 Ω Zload f = 519 MHz f = 469 MHz Zsource f = 469 MHz VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. f MHz Zsource W Zload W 469 0.454 - j0.742 1.08 - j0.129 474 0.510 - j0.637 1.12 + j0.043 479 0.467 - j0.581 1.07 + j0.160 484 0.495 - j0.513 1.09 + j0.294 489 0.495 - j0.457 1.12 + j0.430 494 0.478 - j0.360 1.16 + j0.573 499 0.505 - j0.295 1.18 + j0.586 504 0.502 - j0.249 1.11 + j0.653 509 0.502 - j0.048 1.07 + j0.810 514 0.499 + j0.002 1.03 + j1.01 519 0.502 + j0.003 1.03 + j1.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 23. Series Equivalent Source and Load Impedance — 489 - 499 MHz MRF5S4140HR3 MRF5S4140HSR3 16 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 24. MTTF Factor versus Junction Temperature MRF5S4140HR3 MRF5S4140HSR3 RF Device Data Freescale Semiconductor 17 N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −70 −80 −90 0.0001 0 2 4 6 −60 8 10 1.2288 MHz Channel BW .. .................................................. ............ . . . .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . ................... ......... ..... ........... ......... . ............. ...... . . .. . . . . . . . .............. ..... ............ ........ ........ . ... ...... ......... ...... . . . .......... . . . . . . . . . ......... ............. . . . . .. . . . . .. . . . . .. .... . −ACPR in 30 kHz +ACPR in 30 kHz ................. ......... ............... . . ............ ................ ... . . . . . Integrated BW Integrated BW .. ..... ............. ........ ...... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 25. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 26. Single - Carrier N - CDMA Spectrum MRF5S4140HR3 MRF5S4140HSR3 18 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A M B M M R (INSULATOR) bbb N T A M M B M ccc M T A M M aaa M T A M S (LID) ccc H T A M M B (LID) B M (INSULATOR) B M C F E T A A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF5S4140HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF5S4140HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S4140HR3 MRF5S4140HSR3 Document Number: MRF5S4140H Rev. 2, 5/2006 20 RF Device Data Freescale Semiconductor