AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON6912A is well suited for use in compact DC/DC converter applications. VDS Q1 30V Q2 30V ID (at VGS=10V) 34A 52A RDS(ON) (at VGS=10V) <13.7mΩ <7.3mΩ RDS(ON) (at VGS = 4.5V) <19.3mΩ <10.4mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Pulsed Drain Current C C Avalanche Energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev1: Mar. 2011 Steady-State Steady-State 33 130 A 13.8 IAS, IAR 22 28 A EAS, EAR 24 80 mJ 22 30 9 12 1.9 2.1 1.2 1.3 TJ, TSTG Symbol t ≤ 10s 21 85 10.8 PDSM TA=70°C V 52 8 PD TC=100°C Units V 10 IDSM TA=70°C Avalanche Current ±20 34 IDM TA=25°C Max Q2 30 ID TC=100°C Continuous Drain Current Max Q1 VGS TC=25°C Continuous Drain Current Bottom View Top View RθJA RθJC -55 to 150 Typ Q1 29 56 4.5 www.aosmd.com Typ Q2 24 50 3.5 Max Q1 Max Q2 35 29 67 60 5.5 4.2 A W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6912A Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 85 VGS=10V, ID=10A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ µA 100 nA 1.9 2.5 V 9.8 13.7 14.5 21.5 12.9 19.3 mΩ 1 V 25 A A 45 0.75 mΩ S 610 760 910 pF VGS=0V, VDS=15V, f=1MHz 88 125 160 pF 40 70 100 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17.0 nC Qg(4.5V) Total Gate Charge 5 6.6 8.0 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=10A 2.4 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 5.6 7 8.4 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 6.4 8 9.6 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Mar. 2011 www.aosmd.com Page 2 of 10 AON6912A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V 4V 4.5V VDS=5V 6V 50 25 40 20 ID(A) ID (A) 3.5V 30 15 10 20 VGS=3V 10 125°C 5 25°C 0 0 0 1 2 3 4 0 5 18 1 1.5 2 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 16 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 14 VGS=4.5V 12 10 VGS=10V 8 6 VGS=10V ID=10A 1.6 1.4 17 5 VGS=4.5V 2 ID=10A 10 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 1.0E+01 ID=10A 25 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 20 125°C 1.0E-01 1.0E-02 15 125°C 1.0E-03 10 25°C 1.0E-04 25°C 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6912A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=10A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 100.0 30 RDS(ON) limited 100us 1.0 1ms DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) 10.0 5 200 1000.0 ID (Amps) Ciss 800 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 RθJC=5.5°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: Mar. 2011 www.aosmd.com Page 4 of 10 AON6912A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 IAR (A) Peak Avalanche Current 25 Power Dissipation (W) TA=25°C TA=100°C TA=150°C TA=125°C 20 15 10 5 0 10 0.000001 0.00001 0.0001 0 0.001 25 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 10000 40 35 TA=25°C 1000 30 25 Power (W) Current rating ID(A) 150 20 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=67°C/W 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev1: Mar. 2011 www.aosmd.com Page 5 of 10 AON6912A Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 30 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 130 Units V VDS=30V, VGS=0V VGS(th) µA 100 nA 1.9 2.5 V 6.1 7.3 8.5 10.2 VGS=4.5V, ID=20A 8.3 10.4 VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mΩ mΩ S 1 V 35 A 870 1090 1300 pF VGS=0V, VDS=15V, f=1MHz 340 490 640 pF 22 38 53 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.9 1.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 16 20 nC Qg(4.5V) Total Gate Charge 5 7 9 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=20A 2 2.5 3 nC 1.5 2.5 3.5 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5 ns 2 ns 16 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 2 16 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 20 25 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Mar. 2011 www.aosmd.com Page 6 of 10 AON6912A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 10V 4V 4.5V VDS=5V 80 40 3.5V 30 ID(A) ID (A) 60 40 20 20 10 125°C VGS=3V 25°C 0 0 0 1 2 3 4 1 5 15 2 2.5 3 3.5 4 Normalized On-Resistance 1.6 12 VGS=4.5V RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 9 6 VGS=10V 3 VGS=10V ID=20A 1.4 17 5 2 10 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 20 125°C 15 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6912A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=20A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 Crss 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 18 0 100.0 160 10µs RDS(ON) limited 100µs 10.0 1ms DC 1.0 10ms Power (W) ID (Amps) 30 200 1000.0 TJ(Max)=150°C 0.1 TJ(Max)=150°C TC=25°C 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.01 0.1 1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 0.001 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 40 RθJC=4.2°C/W 0.1 Single Pulse PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: Mar. 2011 www.aosmd.com Page 8 of 10 AON6912A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 IAR (A) Peak Avalanche Current 35 TA=25°C Power Dissipation (W) 30 TA=100°C TA=125°C TA=150°C 25 20 15 10 5 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 150 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) 0.00001 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev1: Mar. 2011 www.aosmd.com Page 9 of 10 AON6912A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev1: Mar. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10