HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 EPOXY LED CHIPS .140 R (REF. ONLY) .084 .096 FEATURES .142 .152 .342 R .030 .426 .432 .325 1.225 1.255 .955 .965 .480 .350 MIN CATHODE .170 MAX DIMPLE OD-663 ANODE • • • • • • Super high power output 880nm peak emission Three chips connected in series TO-66 header for good heat dissipation 100% tested for power output Electrically isolated case All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. .680 .700 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP TEST CONDITIONS IF = 300mA IF = 8A Spectral Bandwidth at 50%, ∆λ IF = 50mA Forward Voltage, VF IF = 300mA Half Intensity Beam Angle, θ Reverse Breakdown Voltage, VR Capacitance, C Rise Time IR = 10µA VR = 0V MIN 150 TYP 170 3500 MAX mW 880 nm 80 120 4.5 30 5 30 1 Fall Time UNITS nm 5 Deg Volts Volts pF µsec 1 µsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 2W Continuous Forward Current 400mA Peak Forward Current (10µs, 400Hz)2 8A Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 260°C 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range -55°C to 100°C Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 60°C/W Typical Maximum Junction Temperature 100°C 16°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH-POWER GaAlAs IRLED ILLUMINATOR 2,000 THERMAL DERATING CURVE 10 PEAK FORWARD CURRENT, Ip (amps) POWER DISSIPATION (mW) 1,600 1,400 1,200 NO HEAT SINK 1,000 INFINITE HEAT SINK 800 600 400 200 25 50 75 AMBIENT TEMPERATURE (°C) DEGRADATION CURVE 90 80 IF = 500mA TCASE = 55°C IF = 300mA TCASE = 45°C 70 TCASE = 25°C NO PRE BURN-IN PERFORMED 60 50 8 101 102 103 STRESS TIME, (hrs) 104 FORWARD I-V CHARACTERISTICS t D= Ip t T T 0.1 1 DUTY CYCLE, D (%) 10 100 RADIATION PATTERN 80 60 40 20 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 POWER OUTPUT vs TEMPERATURE 1.4 RELATIVE POWER OUTPUT 5 4 3 2 1 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 4 6 8 10 12 FORWARD VOLTAGE, VF (volts) 14 SPECTRAL OUTPUT 10,000 80 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 1,000 60 40 20 0 750 0.5 –50 16 POWER OUTPUT, Po (mW) FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT (%) 0.1 1.5 6 100 t = 50µs 1 0 –100 –80 105 7 0 t = 10µs t = 100µs 100 IF = 300mA TCASE = 91°C MAXIMUM PEAK PULSE CURRENT 0.01 0.01 100 RELATIVE POWER OUTPUT (%) 100 RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS MAXIMUM RATINGS 1,800 0 OD-663 800 850 900 WAVELENGTH, λ(nm) 950 1,000 100 10 1 10 DC PULSE 10µs, 100Hz 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013