CMA30E1600PN Thyristor VRRM = 1600 V I TAV = 23 A VT = 1.42 V Single Thyristor Part number CMA30E1600PN Backside: Isolated 2 1 3 Features / Advantages: Applications: Package: TO-220FP ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130121c CMA30E1600PN Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 10 µA VR/D = 1600 V TVJ = 125°C 2 mA TVJ = 25°C 1.42 V 1.80 V 1.42 V VT IT = forward voltage drop 30 A IT = 60 A IT = 30 A IT = 60 A I TAV average forward current TC = 40°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 °C for power loss calculation only Ptot I²t min. 1.92 V T VJ = 150 °C 23 A 36 A TVJ = 150 °C 0.90 V 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45°C 340 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 325 A²s TVJ = 150 °C 240 A²s 240 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 9 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.50 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 17 2.5 TVJ = 125°C; f = 50 Hz repetitive, IT = 90 A non-repet., IT = 30 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.2 A/µs; IG = (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage I GT gate trigger current 0.2 A; VD = ⅔ VDRM 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 125 °C 0.2 V 1 mA TVJ = 25 °C 90 mA VD = ⅔ VDRM R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 80 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 30 A; VD = ⅔ VDRM TVJ = 150 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130121c CMA30E1600PN Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -40 150 °C Weight 2 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL Product Marking Part Number Logo DateCode Assembly Code 0.6 20 60 Nm N 1.6 1.0 mm terminal to backside 2.5 2.5 mm 2500 V 2080 V t = 1 second t = 1 minute 0.4 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Part number C M A 30 E 1600 PN abcdef = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220ABFP (3) YYWW Z XXXXXX Assembly Line Ordering Standard Part Number CMA30E1600PN Similar Part CMA30E1600PB CS22-12io1M CLA30E1200PB CLA30E1200PC CLA30E1200HB CS22-08io1M Equivalent Circuits for Simulation I V0 R0 Marking on Product CMA30E1600PN Package TO-220AB (3) TO-220ABFP (3) TO-220AB (3) TO-263AB (D2Pak) (2) TO-247AD (3) TO-220ABFP (3) * on die level Delivery Mode Tube Code No. 505254 Voltage class 1600 1200 1200 1200 1200 800 T VJ = 150°C Thyristor V 0 max threshold voltage 0.9 V R 0 max slope resistance * 14 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20130121c CMA30E1600PN Outlines TO-220FP E A ØP A1 Q H Dim. D A A1 A2 b c D E e H L L1 ØP Q 1 2 3 L1 A2 L b1 c b e 2 Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130121c CMA30E1600PN Thyristor 250 60 1000 VR = 0 V 50 Hz, 80% VRRM 50 TVJ = 45°C 200 40 IT ITSM 2 It 30 [A] TVJ = 45°C [A] 20 2 [A s] 150 TVJ = 125°C 10 TVJ = 125°C 150°C 0 0.5 TVJ = 25°C 1.0 100 1.5 10 2.0 0.01 0.1 VT [V] 1 IGD: TVJ = -40°C IGD: TVJ = 0°C IGD: TVJ = 25°C [V] Fig. 3 I t versus time (1-10 s) tgd ITAVM [μs] [A] 20 lim. 100 10 typ. 50 -2 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd dc = 1 0.5 0.4 0.33 0.17 0.08 P(AV) i Rthi (K/W) 1 0.1 2 0.06 3 0.2 4 0.35 5 1.79 2.5 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 80 120 160 Tcase [°C] Triggering: A = no; B = possible; C = safe 30 dc = 1 0.5 0.4 0.33 0.17 0.08 30 TVJ = 125°C 10-1 40 4 5 6 7 8 910 t [ms] IGD: TVJ = 25°C 25 3 40 101 0 0 2 2 102 3 2 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C VG 1 t [s] Fig. 1 Forward characteristics 4 TVJ = 125°C 100 2.0 1.5 Fig. 6 Max. forward current at case temperature ti (s) 0.01 0.0001 0.02 0.4 0.15 ZthJC 20 [W] 1.0 [K/W] 10 0.5 0 0.0 0 10 20 30 IF(AV) [A] 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20130121c