CYStech Electronics Corp. Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03BI3 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Equivalent Circuit BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C VGS=10V, ID=13A RDSON(TYP) VGS=4.5V, ID=10A Outline MTB4D0N03BI3 G：Gate 30V 15A 50A 4.2mΩ 5.5mΩ TO-251 D：Drain S：Source G D S Ordering Information Device MTB4D0N03BI3-0-UA-G Package Shipping TO-251 80 pcs/tube, 50 tubes/box (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB4D0N03BI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (silicon limit) Continuous Drain Current @ VGS=10V, TC=25°C (package limit) Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Single Pulse Avalanche Current Avalanche Energy @ L=0.1mH, ID=37A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS EAR PD PDSM Tj, Tstg Limits Unit 30 ±20 56 50 35 15 12 224 *1 37 68 *3 3.6 36 14.4 2.5 *2 1.6 *2 V A mJ W °C -55~+150 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.5 50 *2 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of L=1mH, IAS=13A, VGS=10V, VDD=15V, rated 30V Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss MTB4D0N03BI3 Min. Typ. Max. 30 1 - 25 4.2 5.5 2.5 ±100 1 10 5.3 7.2 - 1442 270 182 - Unit V S nA μA mΩ pF Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=15A VGS=±20V VDS =24V, VGS =0V VDS =24V, VGS =0V, Tj=85°C VGS =10V, ID=13A VGS =4.5V, ID=10A VDS=15V, VGS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 3/8 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Min. - Typ. 31.5 3.6 8.7 13 18 43.8 10.6 2.2 Max. - Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 0.84 12 4 50 224 1.2 - Unit nC ns Ω Test Conditions VDS=15V, VGS=10V, ID=15A VDS=15V, ID=15A, VGS=10V, RGS=3Ω f=1MHz A V ns nC IS=20A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTB4D0N03BI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 4/8 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 10V,9V,8V,7V,6V 120 ID, Drain Current (A) BVDSS, Normalized Drain-Source Breakdown Voltage 140 100 5V 80 4V 60 40 3.5V 20 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=3V 0.4 0 0 1 2 3 4 -75 -50 -25 5 VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 10 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V VGS=10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3.2 200 ID=13A 2.8 160 2.4 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 120 VGS=4.5V, ID=10A RDSON @ Tj=25°C : 5.5 mΩ typ 2 1.6 80 1.2 0.8 40 VGS=10V, ID=13A RDSON @ Tj=25°C : 4.2mΩ typ 0.4 0 0 MTB4D0N03BI3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 100 0 1.4 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 VDS=15V 1 0.1 Ta=25°C Pulsed 8 VDS=10V 6 4 VDS=15V 2 ID=15A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 RDSON Limited 100μs 1ms 10 10ms 100ms 1s DC 1 TC=25°C, Tj=150°C VGS=10V, RθJC=3.5°C/W Single Pulse 28 32 MTB4D0N03BI3 silicon limit 60 50 40 package limit 30 20 10 VGS=10V, RθJC=3.5°C/W 0 0.01 0.01 ID, Maximum Drain Current(A) 10μs 0.1 8 12 16 20 24 Qg, Total Gate Charge(nC) 70 1000 100 4 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 3000 140 TJ(MAX) =150°C TC=25°C RθJC=3.5°C/W 2400 2100 100 Power (W) ID, Drain Current(A) 2700 VDS=10V 120 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 80 60 1800 1500 1200 900 40 600 20 300 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.5 ° C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTB4D0N03BI3 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB4D0N03BI3 CYStek Product Specification Spec. No. : C092I3 Issued Date : 2015.12.14 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-251 Dimension Marking: Product Name Date Code B4D0 N03B □□□□ 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Millimeters Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90 DIM A B C D E F Inches Min. Max. 0.252 0.268 0.205 0.217 0.268 0.283 0.283 0.307 0.091 REF 0.024 0.035 DIM G H J K L M Millimeters Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Inches Min. Max. 0.020 0.028 0.087 0.094 0.018 0.022 0.018 0.024 0.035 0.059 0.213 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB4D0N03BI3 CYStek Product Specification