NL17SZ125 Non−Inverting 3−State Buffer The NL17SZ125 is a high performance non−inverting buffer operating from a 1.65 V to 5.5 V supply. • • • • • • • • http://onsemi.com MARKING DIAGRAM M • • • Extremely High Speed: tPD 2.6 ns (typical) at VCC = 5.0 V Designed for 1.65 V to 5.5 V VCC Operation Overvoltage Tolerant Inputs and Outputs LVTTL Compatible − Interface Capability With 5.0 V TTL Logic with VCC = 3.0 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements 3−State OE Input is Active−Low Replacement for NC7SZ125 Chip Complexity = 36 FETs Pb−Free Packages are Available SC−88A (SOT−353) DF SUFFIX CASE 419A M0 M G G M0 MG G SOT−553 XV5 SUFFIX CASE 463B 1 OE IN A 2 GND 3 VCC 5 4 M0 = Specific Device Code D = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. OUT Y Figure 1. Pinout (Top View) PIN ASSIGNMENT 1 OE EN IN A OUT Y OE 2 IN A 3 GND 4 OUT Y 5 VCC Figure 2. Logic Symbol FUNCTION TABLE OE Input A Input Y Output L L H L H X L H Z X = Don’t Care ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 Publication Order Number: NL17SZ125/D NL17SZ125 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage −0.5 to )7.0 V VIN DC Input Voltage −0.5 to )7.0 V VOUT DC Output Voltage −0.5 to )7.0 V IIK DC Input Diode Current −50 mA IOK DC Output Diode Current −50 mA IOUT DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA TSTG Storage Temperature Range −65 to )150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias )150 °C qJA Thermal Resistance (Note 1) 350 °C/W PD Power Dissipation in Still Air at 85°C 150 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) V u2000 u200 N/A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.65 5.5 V VCC DC Supply Voltage VIN DC Input Voltage 0 5.5 V VOUT DC Output Voltage 0 5.5 V TA Operating Temperature Range −40 +125 °C tr, tf Input Rise and Fall Time 0 0 0 0 20 20 10 5.0 ns/V VCC = 1.8 V $0.15 V VCC = 2.5 V $0.2 V VCC = 3.0 V $0.3 V VCC = 5.0 V $0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NL17SZ125 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Min 0.75 VCC 0.7 VCC VIH High−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 VIL Low−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 VOH High−Level Output Voltage VIN = VIH VOL Low−Level Output Voltage VIN = VIL IIN Input Leakage Current IOZ 3−State Output Leakage IOFF Power Off Leakage Current ICC Quiescent Supply Current TA = 255C VCC (V) Typ −405C v TA v 1255C Max Min Max 0.75 VCC 0.7 VCC 0.25 VCC 0.3 VCC Unit Condition V 0.25 VCC 0.3 VCC V 1.65 1.8 2.3 3.0 4.5 1.55 1.7 2.2 2.9 4.4 1.65 1.8 2.3 3.0 4.5 1.55 1.7 2.2 2.9 4.4 V IOH = −100 mA 1.65 2.3 3.0 3.0 4.5 1.29 1.9 2.4 2.3 3.8 1.52 2.15 2.80 2.68 4.20 1.29 1.9 2.4 2.3 3.8 V IOH = −4 mA IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 1.8 2.3 3.0 4.5 0.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V IOL = 100 mA 1.65 2.3 3.0 3.0 4.5 0.08 0.10 0.15 0.22 0.22 0.24 0.30 0.40 0.55 0.55 0.24 0.30 0.40 0.55 0.55 V IOL = 4 mA IOL = 8 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 0 to 5.5 $1.0 $1.0 mA 0 V v VIN v 5.5 V 1.65 to 5.5 $0.5 $5.0 mA VIN = VIH or VIL 0 V v VOUT v 5.5 V 0.0 1.0 10 mA VIN or VOUT = 5.5 V 1.65 to 5.5 1.0 10 mA VIN = 5.5 V, GND http://onsemi.com 3 NL17SZ125 AC ELECTRICAL CHARACTERISTICS (tR = tF = 3.0 ns) Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Condition Propagation Delay AN to YN (Figures 4 and 5, Table 1) Output Enable Time (Figures 6, 7and 8, Table 1) Output Disable Time (Figures 6, 7and 8, Table 1) TA = 255C VCC (V) Min Typ 9.0 −405C v TA v 1255C Max Min Max Unit ns RL = 1 MW CL = 15 pF 1.8 $ 0.15 2.0 10 2.0 10.5 RL = 1 MW CL = 15 pF 2.5 $ 0.2 1.0 7.5 1.0 8.0 RL = 1 MW RL = 500 W CL = 15 pF CL = 50 pF 3.3 $ 0.3 0.8 1.2 5.2 5.7 0.8 1.2 5.5 6.0 RL = 1 MW RL = 500 W CL = 15 pF CL = 50 pF 5.0 $ 0.5 0.5 0.8 4.5 5.0 0.5 0.8 4.8 5.3 RL = 250 W CL = 50 pF 1.8 $ 0.15 2.0 9.5 2.0 10 2.5 $ 0.2 1.8 8.5 1.8 9.0 3.3 $ 0.3 1.2 6.2 1.2 6.5 5.5 0.8 5.8 10 2.0 10.5 RL and R1= 500 W CL = 50 pF 7.6 5.0 $ 0.5 0.8 1.8 $ 0.15 2.0 2.5 $ 0.2 1.5 8.0 1.5 8.5 3.3 $ 0.3 0.8 5.7 0.8 6.0 5.0 $ 0.5 0.3 4.7 0.3 5.0 8.0 ns ns CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 3.3 V, 10 MHz, VCC = 5.5 V, 9 11 pF VI = 0 V or VCC VI = 0 V or VCC 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 4 NL17SZ125 tf = 3 ns tf = 3 ns 90% INPUT A and B OE = GND VCC 90% Vmi INPUT Vmi 10% 10% tPHL OUTPUT CL* GND RL tPLH VOH Vmo OUTPUT Y Vmo *Includes all probe and jig capacitance. A 1 MHz square input wave is recommended for propagation delay tests. VOL Figure 4. Switching Waveform 2 INPUT Figure 5. TPLH or TPHL VCC R1 = 500 W INPUT VCC OUTPUT CL = 50 pF OUTPUT CL = 50 pF RL = 500 W RL = 250 W A 1 MHz square input wave is recommended for propagation delay tests. A 1 MHz square input wave is recommended for propagation delay tests. Figure 6. TPZL or TPL Figure 7. TPZH or TPHZ 2.7 V Vmi OE Vmi 0V tPZH tPHZ VCC VOH − 0.3 V Vmo On ≈0V tPZL tPLZ ≈ 3.0 V Vmo On VOL + 0.3 V GND Figure 8. AC Output Enable and Disable Waveform Table 1. Output Enable and Disable Times tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns VCC Symbol 3.3 V $ 0.3 V 2.7 V 2.5 V $ 0.2 V Vmi 1.5 V 1.5 V VCC/2 Vmo 1.5 V 1.5 V VCC/2 http://onsemi.com 5 NL17SZ125 DEVICE ORDERING INFORMATION Package Shipping † NL17SZ125DFT2 SC−88A (SOT−353) 3000 / Tape & Reel NL17SZ125DFT2G SC−88A (SOT−353) (Pb−Free) 3000 / Tape & Reel NL17SZ125XV5T2G SOT−553 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NL17SZ125 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NL17SZ125 PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B−01 ISSUE B D −X− 5 A 4 1 e 2 3 E −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L HE b 5 PL 0.08 (0.003) c M MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 DIM A b c D E e L HE X Y MIN 0.50 0.17 0.08 1.50 1.10 INCHES NOM MAX 0.022 0.024 0.009 0.011 0.005 0.007 0.063 0.067 0.047 0.051 0.020 BSC 0.004 0.008 0.012 0.059 0.063 0.067 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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