JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diode BZX84C2V4 - BZX84C51 SOT-23 Dim A Min Max 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 TOP VIEW E 0.45 0.61 D G 1.78 2.05 A Features · · · · B Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes E C G H 2.65 3.05 H J 0.013 0.15 M K J MAKING see table on page 2 the first code Maximum Ratings 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Forward Voltage @ IF = 10mA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: L K Symbol Value Unit VF 0.9 V Pd 350 mW RqJA 357 K/W Tj, TSTG -65 to +150 °C 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300ms pulse width, period = 5ms. 3. f = 1KHz. DS18001 Rev. P-2 1 of 3 BZX84C2V4 - BZX84C51 Electrical Characteristics Type Number @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 2) Marking Code Maximum Zener Impedance (Note 3) VZ @ IZT IZT ZZT @ IZT Nom (V) Min (V) Max (V) (mA) (W) ZZK @ IZK (W) (mA) Maximum Reverse Current IR VR (mA) (V) Typical Temperature Coefficient @ IZT mV/°C Min Max BZX84C2V4 Z11/KZB 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0 BZX84C2V7 Z12/KZC 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0 BZX84C3V0 Z13/KZD 3.0 2.8 3.2 5.0 95 600 1.0 10 1.0 -3.5 0 BZX84C3V3 Z14/KZE 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0 BZX84C3V6 Z15/KZF 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0 BZX84C3V9 Z16/KZG 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0 BZX84C4V3 Z17/KZH 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0 BZX84C4V7 Z1/KZ1 4.7 4.4 5.0 5.0 80 500 1.0 3.0 2.0 -3.5 0.2 BZX84C5V1 Z2/KZ2 5.1 4.8 5.4 5.0 60 480 1.0 2.0 2.0 -2.7 1.2 BZX84C5V6 Z3/KZ3 5.6 5.2 6.0 5.0 40 400 1.0 1.0 2.0 -2.0 2.5 BZX84C6V2 Z4/KZ4 6.2 5.8 6.6 5.0 10 150 1.0 3.0 4.0 0.4 3.7 BZX84C6V8 Z5/KZ5 6.8 6.4 7.2 5.0 15 80 1.0 2.0 4.0 1.2 4.5 BZX84C7V5 Z6/KZ6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3 BZX84C8V2 Z7/KZ7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2 BZX84C9V1 Z8/KZ8 9.1 8.5 9.6 5.0 15 100 1.0 0.5 6.0 3.8 7.0 BZX84C10 Z9/KZ9/8Q 10 9.4 10.6 5.0 20 150 1.0 0.2 7.0 4.5 8.0 BZX84C11 Y1/KY1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0 BZX84C12 Y2/KY2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0 BZX84C13 Y3/KY3 13 12.4 14.1 5.0 30 170 1.0 0.1 8.0 7.0 11.0 BZX84C15 Y4/KY4 15 13.8 15.6 5.0 30 200 1.0 0.1 10.5 9.2 13.0 BZX84C16 Y5/KY5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0 BZX84C18 Y6/KY6 18 16.8 19.1 5.0 45 225 1.0 0.1 12.6 12.4 16.0 BZX84C20 Y7/KY7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0 BZX84C22 Y8/KY8 22 20.8 23.3 5.0 55 250 1.0 0.1 15.4 16.4 20.0 BZX84C24 Y9/KY9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0 BZX84C27 Y10/KYA 27 25.1 28.9 2.0 80 300 0.5 0.1 18.9 21.4 25.3 BZX84C30 Y11/KYB 30 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4 BZX84C33 Y12/KYC 33 31.0 35.0 2.0 80 325 0.5 0.1 23.1 27.4 33.4 BZX84C36 Y13/KYD 36 34.0 38.0 2.0 90 350 0.5 0.1 25.2 30.4 37.4 BZX84C39 Y14/KYE 39 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2 BZX84C43 Y15/KYF 43 40.0 46.0 2.0 150 375 0.5 0.1 30.1 10.0 12.0 BZX84C47 Y16/KYG 47 44.0 50.0 2.0 170 375 0.5 0.1 32.9 10.0 12.0 BZX84C51 Y17/KYH 51 48.0 54.0 2.0 180 400 0.5 0.1 35.7 10.0 12.0 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300ms pulse width, period = 5ms. 3. f = 1KHz. DS18001 Rev. P-2 2 of 3 BZX84C2V4 - BZX84C51 500 50 Tj = 25°C C2V7 See Note 1 C3V3 IZ, ZENER CURRENT (mA) Pd, Power Dissipation (mW) 400 300 200 100 0 100 0 40 20 10 Test Current IZ 5.0mA 0 1 10 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics Tj = 25°C C39 IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) C12 C15 C18 0 Test current IZ 2mA C22 10 C27 Test current IZ 5mA 0 C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics C6V8 0 200 C10 20 C4V7 30 Fig. 1 Power Derating Curve Tj = 25°C C5V6 C8V2 TA, Ambient Temperature, (°C) 30 C3V9 10 C47 C43 C51 8 6 4 Test Current IZ 2mA 2 0 40 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 1000 Cj, JUNCTION CAPACITANCE (pF) Tj = 25 °C VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Junction Capacitance vs Nominal Zener Voltage DS18001 Rev. P-2 3 of 3 BZX84C2V4 - BZX84C51