IRF IRHLG770Z4 Simple drive requirement Datasheet

PRELIMINARY
PD-95865B
2N7618M1
IRHLG770Z4
60V, Quad N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG770Z4 100K Rads (Si)
0.6Ω 1.07A
IRHLG730Z4 300K Rads (Si)
0.6Ω 1.07A
MO-036AB
International Rectifier’s R7 TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Complimentary P-Channel Available IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.07
0.67
4.28
1.0
0.01
±10
13
1.07
0.1
7.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
03/01/11
PRELIMINARY
IRHLG770Z4, 2N7618M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
60
—
—
V
VGS = 0V, ID = 250µA
—
0.08
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
1.0
—
0.9
—
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
VDS = VGS, ID = 250µA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
11
—
µA
nA
nC
ns
nH
Ã
VDS = 10V, IDS = 0.67A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.07A
VDS = 30V
VDD = 30V, ID = 1.07A,
VGS = 5.0V, RG = 24Ω
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
162
39
2.1
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Rg
Gate Resistance
—
13.8
—
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.07
4.28
1.2
51
70
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.07A, VGS = 0V Ã
Tj = 25°C, IF = 1.07A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
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PRELIMINARY
Radiation Characteristics
Pre-Irradiation
IRHLG770Z4, 2N7618M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
„
Diode Forward Voltage
Units
Test Conditions
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
nA
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
—
0.5
Ω
VGS = 4.5V, ID = 0.67A
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
—
1.2
V
VGS = 0V, ID = 1.07A
V
1. Part numbers IRHLG770Z4, IRHLG730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
37
305
39
60
60
60
60
60
35
30
20
I
60
370
34
60
60
60
60
60
20
15
-
Au
84
390
30
60
60
60
60
-
-
-
-
VDS
Br
70
60
50
40
30
20
10
0
Br
I
Au
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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PRELIMINARY
IRHLG770Z4, 2N7618M1
Pre-Irradiation
10
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
10
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1
10
60µs PULSE WIDTH
Tj = 150°C
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
1
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
15
0.1
ID = 1.07A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.5V
1
0.1
0.1
0.1
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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PRELIMINARY
IRHLG770Z4, 2N7618M1
2.5
ID = 1.07A
2.0
1.5
1.0
T J = 150°C
0.5
T J = 25°C
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
0.8
0.75
T J = 150°C
0.7
0.65
0.6
0.55
0.5
T J = 25°C
0.45
0.4
Vgs = 4.5V
0.35
0.3
10 11 12
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 6. Typical On-Resistance Vs
Drain Current
80
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
70
60
2.0
1.5
1.0
ID = 50µA
ID = 250µA
0.5
ID = 1.0mA
ID = 150mA
0.0
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
PRELIMINARY
IRHLG770Z4, 2N7618M1
280
12
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID = 0.89A
VGS, Gate-to-Source Voltage (V)
240
C oss = C ds + C gd
200
C, Capacitance (pF)
Pre-Irradiation
Ciss
160
Coss
120
80
40
Crss
0
1
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
100
0
0.5
1
1.5
2
2.5
3
3.5
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
4
1.2
1.0
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
10
VDS = 48V
VDS = 30V
VDS = 12V
1
T J = 150°C
T J = 25°C
0.1
0.8
0.6
0.4
0.2
VGS = 0V
0.01
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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PRELIMINARY
Pre-Irradiation
32
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
IRHLG770Z4, 2N7618M1
1
1ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
28
TOP
24
BOTTOM
ID
0.48A
0.68A
1.07A
20
16
12
8
4
0
10
25
100
50
75
100
125
150
VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
1
0.01
P DM
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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PRELIMINARY
IRHLG770Z4, 2N7618M1
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
VGS
20V
+
V
- DD
IAS
tp
0.01Ω
A
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
RD
Fig 17b. Gate Charge Test Circuit
VDS
90%
V GS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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PRELIMINARY
Pre-Irradiation
IRHLG770Z4, 2N7618M1
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 22.5mH
Peak IL = 1.07A, VGS = 10V
 ISD ≤ 1.07A, di/dt ≤ 214A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q4
Q3
Q1
Q2
Q2
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 03/2011
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9