UNISONIC TECHNOLOGIES CO., DTC143E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES 1 2 *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects. *Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT *Pb-free plating product number:DTC143EL CE3 R2 PIN CONFIGURATION PIN NO. PIN NAME 1 GND 2 IN 3 OUT GND IN SOT-323 MARKING OUT R1 IN 3 OUT GND ORDERING INFORMATION Order Number Normal Lead free DTC143E-AL3-R DTC143EL-AL3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing SOT-323 Tape Reel 1 QW-R220-015.A DTC143E NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCC VIN IC PD TJ TSTG RATINGS 50 -10 ~ +30 100 200 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device TEST CONDITIONS VCC= 5V, IO=100μA VO= 0.3V, IO= 20mA IO/II= 10mA / 0.5 mA VI= 5V VCC= 50V , VI=0V VO= 5V, IO= 10mA VCE= 10 V, IE= -5mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 0.5 UNIT 0.1 0.3 1.8 0.5 V mA μA 4.7 1 250 6.11 1.2 kΩ 3 20 3.29 0.8 V MHz 2 QW-R220-015.A DTC143E TYPICAL CHARACTERICS Fig.1 Input voltage vs.output current (ON characterristics) 100 Fig.2 Output current vs Input voltage (OFF characterristics) 10m Vo=0.3V 5m 50 20 Output Current :Io (A) Input Voltage :VI(ON) (V) 2m 10 Ta=-40℃ 25℃ 100℃ 5 2 1 1m Vcc=5V Ta=100℃ 25℃ -40℃ 500μ 200μ 100μ 50μ 20μ 10μ 500m 5μ 200m 2μ 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 1μ 0 50m 100m 0.5 Output Current :Io (A) 1 Vo=5V Ta=100℃ 25℃ -40℃ 50 20 10 5 3.0 Io/II=20 Ta=100℃ 25℃ -40℃ 200m 100m 50m 20m 2 1 100μ 200μ 2.5 500m Output Voltage :VO(ON) V 100 2.0 1.5 Fig.4 Output voltage vs. output current 500 200 -1.0 INPUT VOLTAGE: Vi(off) (V) Fig.3 DC current gain vs.output current 1K DC Current Gain: GI ■ NPN EPITAXIAL SILICON TRANSISTOR 10m 5m 2m 500μ 1m 2m 5m 10m 20m 50m 100m Output Current :Io(A) 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m Output Current :Io (A) U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R220-015.A