CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V (max) Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for compact assembly due to a small surface-mount package: “M−FLATTM” (Toshiba package name)” Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Repetitive peak reverse voltage VRRM Average forward current IF (AV) Nonrepetitive peak surge current Junction temperature Storage temperature range Rating Unit 30 V 2.0 (Note 1) A IFSM 30 (50 Hz) A Tj −40~150 °C Tstg −40~150 °C Note 1: Ta = 77°C Device mounted on a ceramic board Board size: 50 mm × 50 mm Soldering size: 2 mm × 2 mm Board thickness: 0.64 t Rectangular waveform (α = 180°), VR = 15 V JEDEC ⎯ JEITA ⎯ TOSHIBA 3-4E1A Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Peak forward voltage Peak repetitive reverse current Junction capacitance Thermal resistance (junction to ambient) Thermal resistance (junction to lead) Symbol Test Condition Min Typ. Max VFM (1) IFM = 1.0 A (pulse test) ⎯ 0.42 ⎯ VFM (2) IFM = 2.0 A (pulse test) ⎯ 0.45 0.48 IRRM (1) VRRM = 5 V (pulse test) ⎯ 0.8 ⎯ IRRM (2) VRRM = 30 V (pulse test) ⎯ 10 100 VR = 10 V, f = 1.0 MHz ⎯ 90 ⎯ Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 t) ⎯ ⎯ 60 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 t) ⎯ ⎯ 135 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 2.1 mm × 1.4 mm) (board thickness: 1.6 t) ⎯ ⎯ 210 ⎯ ⎯ 16 Cj Rth (j-a) ⎯ Rth (j-ℓ) Unit V μA pF °C/W °C/W Start of commercial production 1 2004-09 2013-11-01 CMS17 Marking Abbreviation Code Part No. SG CMS17 Standard Soldering Pad 2.1 Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. SBDs can cause thermal runaway when used under high temperature or high voltage conditions. Be sure to take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit incorporating this device. VRRM: Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account when designing a device for operation at low temperature. IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF (AV) and that Tj be below 120°C. When using this device, take the margin into consideration by using an allowable Tamax-IF (AV) curve. IFSM: This rating specifies the nonrepetitive peak current. This is applied only for abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using the device to ensure high reliability. We recommend that the device be used at a Tj of below 120°C. 3) Thermal resistance between junction and ambient fluctuates depending on the mounting condition of the device. When using the device, design the circuit board and soldering land size to match the appropriate thermal resistance value. 4) Refer to the Rectifiers databook for further information. 2 2013-11-01 CMS17 iF – vF PF (AV) – IF (AV) 1.2 Pulse test DC Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 10 3 Tj = 150°C 125°C 1 25°C 75°C 0.3 0.1 0.03 1.0 180° 120° 0.8 α = 60° 0.6 Rectangular waveform 0.4 0° α 360° 0.2 Conduction angle α 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 Instantaneous forward voltage 0.7 vF 0 0.0 0.8 0.4 (V) 0.8 Maximum allowable lead temperature Tℓ max (°C) α = 60° 80 Rectangular waveform 120° 180° DC 60 40 0° α 360° IF (AV) 20 Conduction angle α VR = 15 V 0 0.0 0.4 0.8 1.2 1.6 Average forward current 2.0 2.4 IF (AV) 2.8 3.2 (A) Tℓ max – IF (AV) 100 2.4 IF (AV) 2.8 140 120 100 80 α = 60° Rectangular waveform 180° 120° DC 60 40 0° α 360° IF (AV) 20 Conduction angle α VR = 15 V 0 0.0 0.4 0.8 3.2 (A) 1.2 1.6 2.0 Average forward current 2.4 IF (AV) 2.8 3.2 (A) rth (j-a) – t 1000 Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land: 2.1 mm × 1.4 mm board thickness: 1.6 t 500 Transient thermal impedance rth (j-a) (°C/W) Maximum allowable temperature Ta max (°C) 120 2.0 160 Device mounted on a ceramic board: board size: 50 mm × 50 mm soldering land: 2 mm × 2 mm board thickness: 0.64 t 140 1.6 Average forward current Ta max – IF (AV) 160 1.2 300 100 50 Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land: 6.0 mm × 6.0 mm board thickness: 1.6 t 30 10 5 Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land: 2.0 mm × 2.0 mm board thickness: 0.64 t 3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 30 100 300 1000 Time t (s) 3 2013-11-01 CMS17 Surge forward current C j – VR Ta = 25°C Cj (pF) Ta = 25°C f = 50 Hz 30 20 10 0 1 3 5 10 30 50 f = 1 MHz 500 300 100 50 30 10 1 100 3 5 IR – Tj (typ.) 0.8 Average reverse power dissipation PR (AV) (W) 10 (mA) VR = 30 V 1 20 V 10 V 5V 3V 0.001 0.0001 0 20 40 60 80 100 Junction temperature Tj 120 140 VR 0.7 (°C) 0.5 0.4 VR (V) (typ.) DC α 300° Conduction angle α Tj = 150°C 240° 180° 0.3 120° 60° 0.2 0.1 4 8 12 16 Reverse voltage 4 100 0.6 0 0 160 50 Rectangular waveform 0° 360° Pulse test 0.01 30 PR (AV) – VR 100 0.1 10 Reverse voltage Number of cycles Reverse current IR (typ.) 1000 Junction capacitance Peak surge forward current IFSM (A) (nonrepetitive) 40 20 VR 24 28 (V) 2013-11-01 CMS17 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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