MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 4.5 Vdc IC 200 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 BASE 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 PD RqJA MARKING DIAGRAMS PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. xxx M G G 1 xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000/Tape & Reel MMBT2369LT1G SOT−23 (Pb−Free) 3000/Tape & Reel MMBT2369ALT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel MMBT2369LT1 MMBT2369ALT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 5 1 Publication Order Number: MMBT2369LT1/D MMBT2369LT1, MMBT2369ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 15 − − 40 − − 40 − − 4.5 − − − − − − 0.4 30 − − 0.4 40 − 40 20 30 20 20 − − − − − − − 120 120 − − − − − − − − − − − − − − − 0.25 0.20 0.30 0.25 0.50 0.7 − − − − − − − 0.85 1.02 1.15 1.60 − − 4.0 5.0 − − − 5.0 13 − 8.0 12 − 10 18 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Vdc Vdc Vdc Vdc mAdc ICBO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) mAdc ICES MMBT2369A ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A Base −Emitter Saturation Voltage (Note 3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) MMBT2369A MMBT2369A MMBT2369A MMBT2369A − VCE(sat) Vdc VBE(sat) Vdc SMALL− SIGNAL CHARACTERISTICS Cobo Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) pF hfe − SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn−On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn−Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns ns ns MMBT2369LT1, MMBT2369ALT1 t1 +10.6 V 0 −1.5 V 3V < 1 ns 270 W 0 −9.15 V Cs* < 4 pF 3.3 k 270 W t1 +10.75 V Cs* < 4 pF 3.3 k < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 1. ton Circuit − 10 mA t1 +10.8 V −2 V 10 V Figure 2. toff Circuit − 10 mA 95 W t1 +11.4 V 0 −8.6 V 0 < 1 ns 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% Cs* < 12 pF 1k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 95 W 10 V Cs* < 12 pF 1N916 *Total shunt capacitance of test jig and connectors. Figure 3. ton Circuit − 100 mA Figure 4. toff Circuit − 100 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN−ON WAVEFORMS Vin 0 220 W 10% Vout ton 90% PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW ≥ 300 ns DUTY CYCLE < 2% Vin 0.1 mF 3.3 kW 50 W VBB +− 50 W 3.3 k 0.0023 mF 0.005 mF 0.0023 mF 0.005 mF 0.1 mF 0.1 mF 3 TURN−OFF WAVEFORMS 0 10% Vin 90% Vout +V =3V − CC Figure 5. Turn−On and Turn−Off Time Test Circuit http://onsemi.com Vout toff VBB = +12 V Vin = −15 V MMBT2369LT1, MMBT2369ALT1 100 TJ = 25°C 5 LIMIT TYPICAL CAPACITANCE (pF) 4 Cib 3 Cob 2 1 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 βF = 10 VCC = 10 V VOB = 2 V 50 SWITCHING TIMES (nsec) 6 tr 5 ts 1 2 C td 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 7. Typical Switching Times Figure 6. Junction Capacitance Variations C < COPT VCC = 10 V 10 2 10 tf tr (VCC = 3 V) 20 t1 +6 V C=0 10 V 980 0 −4 V COPT < 1 ns 500 Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit http://onsemi.com 4 100 VCE , MAXIMUM COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBT2369LT1, MMBT2369ALT1 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 10. Maximum Collector Saturation Voltage Characteristics TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C −15°C 50 −55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) hFE , MINIMUM DC CURRENT GAIN 200 βF = 10 TJ = 25°C 1.2 MAX VBE(sat) 1.0 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 12. Saturation Voltage Limits http://onsemi.com 5 100 100 MMBT2369LT1, MMBT2369ALT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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