AMS AMS2300 Transistor Datasheet

AMS2300
DESCRIPTION
The AMS2300 i s the N-Channel logic enhancement mode power field effect transistor i s
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low i n-line power loss
are needed in a very small outline surface mount package.
i
i
i
i
i
i
i
i
i
PIN CONFIGURATION
SOT-23-3L
i
i
i
i
i
i
3
D
G
S
1
2
2.Source
3.Drain
PART MARKING
SOT-23-3L
20V/6.0A, RDS(ON) = 22mΩ (Typ.)
@VGS = 10V
20V/5.0A, RDS(ON) = 36mΩ
@VGS = 4.5V
20V/4.5A, RDS(ON) = 45mΩ
@VGS = 2.5V
20V/4.0A, RDS(ON) = 60mΩ
@VGS = 1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23-3L package design
3
42YA
2
1
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
AMS2300
i
FEATURE
1.Gate
i
Package
SOT-23-3L
g
Part Marking
g
※ Process Code : A ~ Z ; a ~ z
1
Advanced Monolithic Systems
http://www.ams-semitech.com
42YA
AMS2300
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
6.0
3.0
A
IDM
13
A
IS
1.0
A
PD
1.25
0.8
W
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
140
TA=25℃
TA=70℃
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25℃
TA=70℃
Power Dissipation
Operation Junction Temperature
2
Advanced Monolithic Systems
http://www.ams-semitech.com
℃/W
AMS2300
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS=0V,ID=250uA
20
VGS(th)
VDS=VGS,ID=250uA
0.4
IGSS
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V
1.0
V
VDS=0V,VGS=±20V
±100
nA
VDS=20V,VGS=0V
1
VDS=20V,VGS=0V
TJ=85℃
10
IDSS
uA
RDS(on)
VGS=10V,ID=6.0A
VGS=4.5V,ID=5.0A
VGS=2.5V,ID=4.5A
VGS=1.8V,ID=4.0A
0.022
0.036
0.045
0.060
Ω
Forward Tranconductance
gfs
VDS=15V,ID=5.0A
30
S
Diode Forward Voltage
VSD
IS=1.7A,VGS=0V
0.9
1.3
10
13
Drain-source On-Resistance
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Output Capacitance
Ciss
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
VDS=10V
VGS=4.5V
ID≡5A
td(on)
tr
td(off)
tf
nC
2.1
VDS=10V
VGS=0V
F=1MHz
600
120
VDD=10V
RL=10Ω
ID=1A
VGEN=4.5V
RG=6Ω
15
25
40
60
45
65
30
40
3
Advanced Monolithic Systems
1.4
http://www.ams-semitech.com
pF
100
nS
AMS2300
TYPICAL CHARACTERICTICS (25℃ Unless noted)
4
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2300
TYPICAL CHARACTERICTICS (25℃ Unless noted)
5
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2300
TYPICAL CHARACTERICTICS
6
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS2300
SOT-23-3L PACKAGE OUTLINE
7
Advanced Monolithic Systems
http://www.ams-semitech.com
Similar pages