AMS2300 DESCRIPTION The AMS2300 i s the N-Channel logic enhancement mode power field effect transistor i s produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low i n-line power loss are needed in a very small outline surface mount package. i i i i i i i i i PIN CONFIGURATION SOT-23-3L i i i i i i 3 D G S 1 2 2.Source 3.Drain PART MARKING SOT-23-3L 20V/6.0A, RDS(ON) = 22mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 36mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 45mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 60mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23-3L package design 3 42YA 2 1 Y: Year Code A: Process Code ORDERING INFORMATION Part Number AMS2300 i FEATURE 1.Gate i Package SOT-23-3L g Part Marking g ※ Process Code : A ~ Z ; a ~ z 1 Advanced Monolithic Systems http://www.ams-semitech.com 42YA AMS2300 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 6.0 3.0 A IDM 13 A IS 1.0 A PD 1.25 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 TA=25℃ TA=70℃ Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) TA=25℃ TA=70℃ Power Dissipation Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS2300 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA 20 VGS(th) VDS=VGS,ID=250uA 0.4 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V 1.0 V VDS=0V,VGS=±20V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=85℃ 10 IDSS uA RDS(on) VGS=10V,ID=6.0A VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A 0.022 0.036 0.045 0.060 Ω Forward Tranconductance gfs VDS=15V,ID=5.0A 30 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.9 1.3 10 13 Drain-source On-Resistance V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=10V VGS=4.5V ID≡5A td(on) tr td(off) tf nC 2.1 VDS=10V VGS=0V F=1MHz 600 120 VDD=10V RL=10Ω ID=1A VGEN=4.5V RG=6Ω 15 25 40 60 45 65 30 40 3 Advanced Monolithic Systems 1.4 http://www.ams-semitech.com pF 100 nS AMS2300 TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS2300 TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS2300 TYPICAL CHARACTERICTICS 6 Advanced Monolithic Systems http://www.ams-semitech.com AMS2300 SOT-23-3L PACKAGE OUTLINE 7 Advanced Monolithic Systems http://www.ams-semitech.com