Siemens BBY33BB-2 Silicon tuning varactor (tuning varactor in passivated mesa technology epitaxial design) Datasheet

Silicon Tuning Varactor
●
BBY 33 BB-2
Tuning varactor in passivated Mesa technology
(epitaxial design)
Type
Marking
Ordering Code
Pin Configuration
Package1)
BBY 33 BB-2
–
Q62702-B70
Cathode: black dot,
heat sink
C1
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
27
V
Forward current
IF
200
mA
Junction temperature
Tj
175
˚C
Storage temperature range
Tstg
– 55 … + 150
Operating temperature range
Top
– 55 … + 150
1)
For detailed information see chapter Package Outlines.
BBY
BBY33
33BBBB-2
2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Forward voltage
IF = 200 mA
VF
–
–
1.1
V
Reverse current
VR = 15 V
IR
–
–
5
nA
Diode capacitance
VR = 0
CT
0.9
–
1.5
pF
Capacitance ratio
VR = 0, VR = 25 V
CT0
CT25
–
3.0
–
–
Figure of merit
VR = 4 V, f = 50 MHz
Q(min)
4000
–
–
–
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