AP18T10GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
BVDSS
100V
RDS(ON)
160mΩ
ID
G
9A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.6
A
30
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
28
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.5
℃/W
62
℃/W
1
201008121
AP18T10GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=5A
-
-
160
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5.6
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=80V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.5
-
nC
VDS=50V
-
6.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
13
-
ns
tf
Fall Time
VGS=10V
-
3.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
425
680
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
33
-
pF
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
IS=5A, VGS=0V
-
53
-
ns
dI/dt=100A/µs
-
130
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18T10GP
20
20
7 .0 V
10 V
9.0 V
8.0V
7.0V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T C = 150 o C
10 V
T C = 25 o C
12
6.0 V
8
12
8
V G = 5.0 V
5.0 V
4
4
VG=4.5V
0
0
0
2
4
6
0
8
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
280
2.4
I D =5A
I D =5A
V G =10V
T C =25 o C
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
240
200
1.6
1.2
160
0.8
120
0.4
4
5
6
7
8
9
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
10
8
6
T j =150 o C
VGS(th) (V)
IS(A)
2.6
T j =25 o C
2.2
4
1.8
2
0
1.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18T10GP
f=1.0MHz
1000
12
ID=5A
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
V DS = 80 V
6
100
C oss
4
C rss
2
10
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Operation in this
area limited by
RDS(ON)
10
100us
1ms
1
10ms
100ms
DC
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4