Central D44C8 Silicon npn power transistor Datasheet

D44C SERIES
w w w. c e n t r a l s e m i . c o m
SILICON
NPN POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D44C series
devices are silicon NPN power transistors designed for
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCES
VCEO
D44C1 D44C4
D44C2 D44C5
D44C3 D44C6
40
55
30
D44C7 D44C10
D44C8 D44C11
D44C9 D44C12 UNITS
70
90
V
45
60
80
V
VEBO
IC
5.0
V
4.0
A
ICM
PD
6.0
A
30
W
TJ, Tstg
ΘJC
-65 to +150
°C
Thermal Resistance
4.2
°C/W
Thermal Resistance
ΘJA
75
°C/W
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
MAX
10
UNITS
μA
100
μA
BVCEO
BVCEO
IC=100mA (D44C1, 2, 3)
IC=100mA (D44C4, 5, 6)
30
V
45
V
BVCEO
BVCEO
IC=100mA (D44C7, 8, 9)
IC=100mA (D44C10, 11, 12)
60
V
80
V
VCE(SAT)
IC=1.0A, IB=50mA
(D44C2, 3, 5, 6, 8, 9, 11, 12)
0.5
V
VCE(SAT)
VBE(SAT)
IC=1.0A, IB=100mA (D44C1, 4, 7, 10)
IC=1.0A, IB=100mA
0.5
V
1.3
V
Cob
fT
VCB=10V, IE=0, f=1.0MHz
VCE=4.0V, IC=20mA
100
pF
50
MHz
td+tr
ts
IC=1.0A, IB1=100mA
IC=1.0A, IB1=IB2=100mA
100
ns
500
ns
tf
IC=1.0A, IB1=IB2=100mA
75
ns
R1 (4-March 2014)
D44C SERIES
SILICON
NPN POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
D44C3
D44C2
D44C1
D44C6
D44C5
D44C4
D44C9
D44C8
D44C7
D44C12
D44C11
D44C10
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
MIN MAX
hFE
VCE=1.0V, IC=0.2A
40 120
100 220
25
hFE
VCE=1.0V, IC=2.0A
20
20
hFE
VCE=1.0V, IC=1.0A
10
-
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
R1 (4-March 2014)
w w w. c e n t r a l s e m i . c o m
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