FJP5021 FJP5021 High Voltage and High Reliability • High Speed Switching : tF = 0.1µs (Typ.) • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 2 A 50 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 BVCEO BVEBO Typ. Max. Units V Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped 500 V V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 50 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f=1MHz 80 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 18 MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω 0.1 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5021 Typical Characteristics 100 5 4 IB = 600mA VCE = 5V IB = 400mA IB = 1A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 800mA IB = 1.2A IB = 200mA 3 IB = 100mA 2 IB = 50mA 1 10 IB = 20mA IB = 0 0 0 2 4 6 8 1 0.01 10 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 6 10 IC = 5 IB VCE = 5V 5 1 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 V BE(sat) 0.1 VCE (sat) 0.01 0.01 0.1 1 4 3 2 1 0 0.0 10 0.2 IC[A], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 0µ s IC[A], COLLECTOR CURRENT 50 s tF DC s tON 0.1 IC(max) 1m 1 50µs ICP(max) 10 m 10 tON, tSTG, tF [µs], TIME tSTG 1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2003 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Bias Safe Operating Area Rev. A, May 2003 FJP5021 Typical Characteristics (Continued) 80 Vcc=50V, IB1 =1A, IB2 = -1A L = 1mH 10 1 0.1 70 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 60 50 40 30 20 10 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, May 2003 FJP5021 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2