AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power. • 17% Efficiency @ ¼W PAVG • • • The AP601 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure. Applications • Mobile Infrastructure HPA • WiBro HPA ACLR1 vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C -35 20 mA -40 ACLR1 (dBc) • The AP601 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device Internal Active Bias incorporates proprietary bias circuitry to compensate for Internal Temp Compensation variations in linearity and current draw over temperature. Capable of handling 7:1 VSWR @ The module does not require any negative bias voltage; an internal active bias allows the AP601 to operate directly off 28 Vcc, 2.14 GHz, 1W CW Pout a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be Lead-free/RoHS-compliant adjusted externally to meet specific system requirements. 5x6 mm power DFN package 40 mA 50 mA -45 -50 -55 -60 18 20 22 24 26 Average Output Power (dBm) Specifications Typical Performance W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA Parameter Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP PIN_VPD Current, Ipd Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc Units Min MHz MHz dBm dB dB dB dBc dBc mA mA % dBm mA V V Typ 800 2140 +24 13.5 12 8 -51 -55 1 52 17 +32.5 40 +5 +28 Absolute Maximum Rating Parameter Rating Storage Temperature, Tstg Junction Temperature, TJ -55 to +125 ºC RF Input Power (CW tone), Pin Breakdown Voltage C-B, BVCBO Breakdown Voltage C-E, BVCEO Quiescent Bias Current, ICQ Power Dissipation, PDISS Input P6dB 80 V @ 0.1 mA 51 V @ 0.1 mA 80 mA 2.3 W For 106 hours MTTF 192 ºC Max Parameter 2200 Test Frequency Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc Units MHz dBm dB dB dB dBc dBc mA % dBm mA V V Typical 940 +24 15.8 13 7 -50 -51 52 17 +32.5 1960 +24 15 11 10 -49 -62 52 17 +32.7 40 +5 +28 2140 +24 13.5 12 8 -51 -55 52 17 +32.5 Notes: 1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP601 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout. Ordering Information Part No. Description AP601-F AP601-PCB900 AP601-PCB1960 AP601-PCB2140 High Dynamic Range 28V 1.8W HBT Amplifier 869-960 MHz Evaluation board 1930-1990 MHz Evaluation board 2110-2170 MHz Evaluation board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Typical Device Data S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 40 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) 30 0. 4 0.8 2. 0 6 0. 0 3. 25 0 3. 0 4. 0 4. 5.0 5.0 0.2 20 0.2 10.0 5 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 10 0.4 0 0.2 15 0.2 10.0 -10.0 -10.0 2 -0. 2 -0. -5. 0 -4 .0 -5. 0 0 -4 .0 -3 .0 Swp Min 3e-005GHz .0 -2 .4 -0 -0.8 2.5 -0 .6 2 .0 -2 1 1.5 Frequency (GHz) -0.8 0.5 -1.0 0 -0 .6 .4 -0 -10 Swp Min 3e-005GHz -1.0 -5 -3 .0 Gain (dB) Swp Max 3.00001GHz 2. 0 DB(GMax()) 1.0 1.0 0.8 6 0. Swp Max 3.00001GHz 0. 4 DB(|S(2,1)|) 35 S22 S11 Gain / Maximum Stable Gain 40 The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -9.60 -8.20 -5.47 -2.93 -2.02 -1.58 -1.69 -1.49 -1.52 -1.70 -2.01 -2.35 -2.78 -3.34 -4.04 -5.00 -5.86 -165.86 -156.90 -154.63 -164.90 -173.51 -179.10 177.02 173.06 168.28 162.02 153.47 142.58 130.51 119.29 111.03 109.46 118.67 22.23 21.64 20.66 18.00 15.57 13.78 12.16 11.02 10.09 9.48 9.14 8.93 8.73 8.50 8.34 8.17 8.03 169.20 160.86 144.37 121.17 107.46 98.50 89.73 82.27 75.95 69.46 61.67 52.54 42.07 30.77 17.30 1.87 -16.70 -46.52 -41.16 -36.22 -32.88 -31.96 -31.66 -30.97 -30.27 -29.97 -29.41 -28.83 -28.18 -27.42 -26.75 -26.07 -25.45 -25.11 80.76 69.46 55.53 35.73 24.64 18.33 22.20 13.95 9.68 5.89 1.59 -4.64 -11.50 -20.45 -30.92 -44.10 -62.65 -0.25 -0.38 -1.13 -2.85 -3.92 -4.42 -4.57 -4.73 -4.46 -4.15 -3.85 -3.63 -3.42 -3.20 -2.86 -2.39 -1.91 -5.41 -14.13 -26.14 -41.81 -51.12 -58.97 -65.06 -70.40 -74.09 -77.84 -81.69 -85.86 -90.97 -97.68 -106.74 -119.23 -134.59 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Application Circuit PC Board Layout Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050” Baseplate Configuration Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended. Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP601 in a laboratory environment. The sequencing is not required in the final system application. Bias. Vcc Vbias Vpd Voltage (V) +28 +5 +5 Turn-on Sequence: 1. 2. 3. 4. 5. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +28V. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25μA). Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 40 mA. Turn on RF power. Turn-off Sequence: 1. 2. 3. 4. Notes: 1. 2. 3. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vbias = +5V. Turn off power supply Vcc = +28V. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2 results in a lower Icq. Icq should not be increased above 80mA. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can be up to 2mA at a quiescent current setting of 40mA. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 2mA on the AP601. Ibias vs Output Power 2 1.5 1.5 Ibias (mA) Ipd (mA) Ipd vs Icq 2 1 0.5 1 0.5 0 0 0 20 40 60 Icq Setting (mA) 80 100 18 20 22 24 26 28 Output Average Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Frequency (MHz) W-CDMA Ch. Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc 880 940 Units +24 +24 dBm 16.5 15.8 dB 8.9 14 dB 15 7.5 dB -50 -50 dBc -51 -51 dBc 54 52 mA 16.6 17 % +32.5 +32.5 dBm 40 mA +5 V +28 V VCC VPD VBIAS Typical WCDMA Performance at 25 °C at a channel power of +24 dBm GND 869-960 Application Circuit (AP601-PCB900) C7 1000pF 15nH See note 6 C26 0.5pF See note 5 5.1 Ohm C24 1.8pF See note 4 3.3pF See note 3 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C1 is at 0.710” (29.1° @ 940 MHz) from the center of C24. 4. The center of C24 is placed at 0.285” (11.7°@ 940 MHz) from the edge of the AP601 (U1). 5. The center of C26 is placed at 0.055” (2.3° @ 940 MHz) from the edge of the AP601 (U1). 6. The center of L4 is at 0.095” (3.9° @ 940 MHz) from the center of C26. 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 8. The main RF trace is cut at components L3 and L4 for this particular reference design. 869-960 MHz Application Circuit Performance Plots Gain vs. Frequency -5 16 15 60 Collector Efficiency (%) 17 S11, S22 (dB) Gain (dB) CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C Vcc = 28V, Icq = 40 mA, 25 ˚C 0 14 -10 -15 -20 S11 13 S22 -25 0.8 0.84 0.88 0.92 0.96 1 0.85 0.95 1 1.05 IMD vs. Output Power CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C 940 MHz 894 MHz 960 MHz 1.1 -40 WCDMA 3GPP Test Model 1+64DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% 10 21 25 29 33 ACPR vs. Output Power vs. Frequency IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C IMD3L IMD5 -50 -60 -70 -60 20 20 -40 -55 18 30 IMD3U -50 16 960 MHz 40 17 ACPR (dBc) 920 MHz 940 MHz Output Power (dBm) WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C IMD (dBc) -45 0.9 ACLR1 vs. Output Power vs. Frequency 880 MHz 50 Frequency (GHz) -40 869 MHz 920 MHz 0 0.8 Frequency (GHz) ACLR1 (dBc) Efficiency vs. Output Power vs. Frequency S11, S22 vs. Frequency Vcc = 28V, Icq = 40 mA, 25 ˚C 18 22 24 Average Output Power (dBm) 26 -50 -60 -70 20 22 24 26 28 30 Output Power, PEP (dBm) 17 19 21 23 25 27 Average Output Power (dBm) Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc 1960 MHz +24 dBm 15 dB 11 dB 10 dB -49 dBc -62 dBc 52 mA 17 % +32.7 dBm 40 mA +5 V +28 V VCC GND VBIAS Typical WCDMA Performance at 25 °C at a channel power of +24 dBm VPD 1930-1990 MHz Application Circuit (AP601-PCB1960) C7 W = .030” L = .980” 1000pF C27 0.1μF 4.7 nH See note 3 C19 2.4pF See note 5 C5 2.2pF See note 4 C28 0.8pF See note 6 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.035” (3.0° @ 1960 MHz) from the center of C5. 4. The center of C5 is placed at 0.085” (7.3° @ 1960 MHz) from the edge of the AP601 (U1). 5. The center of C19 is placed at 0.755” (64.5° @ 1960 MHz) from the edge of the AP601 (U1). 6. The center of C18 is placed at 0.300” (25.6° @ 1960 MHz) from the center of C19. 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 8. The main RF trace is cut at component location L3 for this particular reference design. 1930-1990 MHz Application Circuit Performance Plots Gain vs. Output Power vs. Frequency 14 13 1930 MHz 1960 MHz 1990 MHz 50 -10 -15 S11 -20 S22 -25 23 25 27 29 31 1.85 ACLR1 vs. Output Power vs. Frequency 1.9 1.95 2 2.05 2.1 -55 22 24 Average Output Power (dBm) 26 30 34 ACPR vs. Output Power vs. Frequency IS-95A, 9 Ch. Fwd, 1960 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C IMD3L IMD3U IMD5 -60 -50 -60 -70 -80 -65 26 Output Power (dBm) -70 WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB 22 18 ACPR (dBc) IMD (dBc) -50 20 10 -40 -50 1990 MHz 18 20 CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C -40 1960 MHz 16 1990 MHz 30 IMD vs. Output Power Vcc = 28V, Icq = 40 mA, 25 ˚C 1930 MHz -60 1960 MHz 40 Frequency (GHz) -40 -45 1930 MHz 0 1.8 33 Output Power (dBm) ACLR1 (dBc) Collector Efficiency (%) -5 S11, S22 (dB) Gain (dB) 15 11 CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C Vcc = 28V, Icq = 40 mA, 25 ˚C 0 12 Efficiency vs. Output Power vs. Frequency S11, S22 vs. Frequency CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C 16 -80 22 24 26 28 30 32 Output Power, PEP (dBm) 17 19 21 23 25 27 Average Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc 2140 MHz +24 dBm 13.5 dB 12 dB 8 dB -51 dBc -55 dBc 52 mA 17 % +32.5 dBm 40 mA +5 V +28 V VCC VPD VBIAS Typical WCDMA Performance at 25 °C at a channel power of +24 dBm GND 2110-2170 MHz Application Circuit (AP601-PCB2140) C7 1000pF 3,3pF C22 See note 4 1.2pF See note 3 C19 1.8pF See note 6 C5 2.4pF See note 5 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.090” (8.4° @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.910” (84.9° @ 2140 MHz) from the center of C5. 5. The center of C5 is placed at 0.100” (9.3° @ 2140 MHz) from the edge of the AP601 (U1). 6. The center of C19 is placed at 0.760” (70.9° @ 2140 MHz) from the edge of the AP601 (U1). 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 2110-2170 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Frequency Collector Efficiency (%) 50 -5 S11, S22 (dB) 12 11 2110 MHz 10 24 S11 S22 2170 MHz 22 -15 -20 2140 MHz 9 -10 28 30 2 32 2.05 2.1 ACLR1 vs. Output Power vs. Frequency 2.15 2.2 2.25 Collector Current (mA) 2140 MHz 2170 MHz -45 -50 -55 -60 12 16 20 24 Average Output Power (dBm) 26 28 32 ACLR1 vs. Output Power vs. Vcc WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C -35 26 V 2110 MHz 60 24 Output Power (dBm) 28 V -40 2140 MHz 2170 MHz 55 50 30 V -45 32 V -50 -55 45 -60 40 22 10 WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C 2110 MHz 20 20 2.3 65 18 2170 MHz 30 Icc vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C -35 16 2140 MHz 40 Frequency (GHz) Output Power (dBm) -40 2110 MHz 0 -25 26 ACLR1 (dBc) Gain (dB) CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C Vcc = 28V, Icq = 40 mA, 25 ˚C 0 13 ACLR1 (dBc) Efficiency vs. Output Power vs. Frequency S11, S22 vs. Frequency CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C 14 16 18 20 22 24 26 Average Output Power (dBm) 16 18 20 22 24 26 Average Output Power (dBm) Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 6 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier 2110-2170 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Temperature Icc vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz 12 11 25 ˚C 85 ˚C 50 -40 ˚C 125 Collector Efficiency (%) Collector Current (mA) Gain (dB) 13 -40 ˚C 25 ˚C 100 85 ˚C 75 50 25 10 0 14 18 22 26 30 34 ACLR1 vs. Output Power vs. Temperature 18 22 26 30 85 ˚C -45 -50 -55 24 85 ˚C 50 40 20 22 24 26 2150 28 V 30 V -45 32 V -50 18 Gain vs. Output Power vs. Vcc 22 24 26 28 V 20 30 V 32 V 15 10 5 16 18 12 IMD vs. Output Power 26 V 28 V 30 V 32 V -40 IMD3U 32 V 20 32 IMD5 -60 -70 10 -80 0 28 26 IMD3L -50 30 V 30 24 CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C 28 V 40 22 CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C 26 V 50 20 Average Output Power (dBm) IMD (dBc) Collector Efficiency (%) Gain (dB) 20 60 Output Power (dBm) 25 Efficiency vs. Output Power vs. Vcc CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C 13 26 26 V Average Output Power (dBm) 14 24 0 16 2170 22 WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C 26 V Frequency (MHz) 24 20 Efficiency vs. Output Power vs. Vcc -60 20 18 30 85 ˚C 16 5 Average Output Power (dBm) -55 25 ˚C 12 10 16 Collector Efficiency (%) ACLR1 (dBc) -40 ˚C 9 85 ˚C 15 WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C -40 10 25 ˚C ACLR1 vs. Output Power vs. Vcc -35 11 20 0 18 WCDMA, Vcc = 28V, Icq = 40 mA, +24 dBm Pout 12 34 WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz 25 ˚C 60 Gain vs. Frequency vs. Temperature 13 30 -40 ˚C Average Output Power (dBm) 14 26 Efficiency vs. Output Power vs. Temperature -40 ˚C 16 26 15 2130 22 25 Average Output Power (dBm) 10 2110 18 Output Power (dBm) 30 -60 11 10 14 Collector Efficiency (%) Collector Current (mA) 25 ˚C 22 20 WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz -40 ˚C 20 85 ˚C 30 34 70 18 25 ˚C Icc vs. Output Power vs. Temperature WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz 16 40 Output Power (dBm) -35 -40 -40 ˚C 0 14 Output Power (dBm) ACLR1 (dBc) CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz 150 14 Gain (dB) Efficiency vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz 15 12 16 20 24 28 32 Output Power (dBm) 22 24 26 28 30 32 Output Power, PEP (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 7 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier 2110-2170 MHz Application Note: Changing Icq Biasing Configurations Thermal Rise vs. Output Power vs. Icq VPD PIN_VPD (V) 2.50 2.58 2.63 2.68 2.72 2.77 2.81 2.85 VCC VPD (V) 5 5 5 5 5 5 5 5 VBIAS R2 (Ω) 12k 5.44k 3.48k 2.61k 2.06k 1.67k 1.42k 1.22k Vcc = 28V 80 10 mA Thermal Rise (˚C) Icq (mA) 10 20 30 40 50 60 70 80 GND The AP601 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 40 mA as the quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP601 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. 20 mA 60 30 mA 40 mA 40 C7 1000pF 50 mA 60 mA 20 70 mA 3,3pF C22 1.2pF C19 1.8pF C5 2.4pF 80 mA 0 14 16 18 20 22 24 26 Output Power (dBm) ACLR1 vs. Output Power vs. Icq Efficiency vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA -40 -50 30 100 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA Collector Efficiency (%) 10 mA Collector Current (mA) 80 60 40 20 0 18 20 22 24 26 Average Output Power (dBm) Gain vs. Output Power vs. Icq 20 22 24 Output Power (dBm) 13 12 40 mA 50 mA 60 mA 70 mA 80 mA 10 22 26 Output Power (dBm) 30 5 18 20 34 22 24 26 Average Output Power (dBm) Efficiency vs. Output Power vs. Icq CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 60 30 26 22 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 18 18 80 mA CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 14 30 mA 60 mA 70 mA 10 26 34 20 mA 40 mA 50 mA 15 Output Power vs. Input Power vs. Icq CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 10 mA 20 20 mA 30 mA Average Output Power (dBm) 15 11 25 10 mA 0 18 Collector Efficiency (%) ACLR1 (dBc) WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C 120 -60 Gain (dB) Efficiency vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C -30 10 mA 20 mA 50 30 mA 40 mA 40 50 mA 60 mA 70 mA 80 mA 30 20 10 0 4 8 12 16 20 Input Power (dBm) 18 22 26 30 34 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 8 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier Frequency W-CDMA Channel Power Power Gain ACLR Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc 2350 MHz +23 dBm 14 dB -50 dBc 50 mA 14 % +32.5 dBm 40 mA +5 V +28 V VCC GND VBIAS Typical WCDMA Performance at 25 °C at a channel power of +23 dBm VPD 2320-2380 MHz WiBro Application Circuit C34 C7 W = .030” L = .590” 1000pF C33 C32 22pF 22pF C31 1.1pF See note 6 C30 0.2pF See note 5 C19 0.6pF See note 4 C3 1.6pF See note 3 22pF Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C3 is placed at 0.050” (5.1° @ 2.35 GHz) from the edge of the AP601 (U1). 4. The center of C19 is placed at 0.650” (66.6° @ 2.35 GHz) from the edge of the AP601 (U1). 5. The center of C30 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C19. 6. The center of C31 is placed at 0.040” (4.1° @ 2.35 GHz) from the center of C19. 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. C32 C33 C34 C31 C30 C19 2320-2380 MHz Application Circuit Performance Plots Gain vs. Output Power vs. Frequency Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C 60 Collector Efficiency (%) 15 13 12 2320 MHz 11 2350 MHz 2380 MHz 10 50 2350 MHz 2380 MHz 40 30 20 10 0 22 24 26 28 30 32 34 22 24 26 Output Power (dBm) 28 EVM vs. Output Power ACLR1 vs. Output Power vs. Frequency Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C 2320 MHz EVM (%) ACLR1 (dBc) 2.5 2350 MHz 2380 MHz -50 2.0 1.5 1.0 -55 0.5 WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB 21 22 23 24 Average Output Power (dBm) 25 2320 MHz 20 2350 MHz 2380 MHz 15 10 5 WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB 0 0.0 -60 34 25 3.0 -40 20 32 Vcc = 28V, Icq = 40 mA, 25 ˚C, 2350 MHz Vcc = 28V, Icq = 40 mA, 25 ˚C -45 30 Output Power (dBm) Collector Efficiency (%) Gain (dB) 14 2320 MHz 20 21 22 23 24 Output Power (dBm) 25 20 21 22 23 24 25 Average Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 9 of 10 May 2007 ver 1 AP601 High Dynamic Range 1.8W 28V HBT Amplifier AP601-F Mechanical Information This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Drawing Outline Drawing Product Marking The component will be laser marked with a “AP601-F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle Function PIN_VBIAS N/C RF IN RF Output / Vcc PIN_VPD GND MSL / ESD Rating MTTF vs. Junction Temperature Thermal Specifications Thermal Resistance, ΘJC Referenced from peak junction to the center of the bottomside ground paddle Junction Temperature, TJ For 106 hours MTTF Rating 33.3 °C / W 192 ºC Max Junction Temperature, TJ,max 250 ºC For catastrophic failure MTTF (hours) Parameter 1.E+09 1.E+08 ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 1.E+07 1.E+06 1.E+05 120 140 160 180 200 Junction Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 10 of 10 May 2007 ver 1