DIGITRON SEMICONDUCTORS FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA (max) @ 5V (FJT1100) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature +260°C Power dissipation Maximum total power dissipation at 25°C ambient Linear power derating factor (from 25°C) 250 mW 1.67 mW/°C Working inverse voltage FJT1100 FJT1101 25V 15V Continuous forward current 150 mA ELECTRICAL CHARACTERISTICS (25°C ambient temperature unless otherwise noted) Symbol BV Characteristics Breakdown voltage Min FJT1100 FJT1101 FJT1100 Max Units Test Conditions V IR = 5.0µA 1.0 10 5.0 15 pA VR = 5.0V VR = 15V VR = 5.0V VR = 15V 30 20 IR Reverse current VF Forward voltage FJT1100 FJT1101 1.05 1.10 V IF = 50mA C Capacitance FJT1100 FJT1101 1.5 1.8 pF VR = 0, f = 1MHz FJT1101 MECHANICAL CHARACTERISTICS Case DO-35 Marking Body painted, alpha-numeric Polarity Cathode band Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20121214