IRF IRHF593130 Radiation hardened power mosfet thru-hole (to-39) Datasheet

PD-96963
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF597130
100V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHF597130 100K Rads (Si)
IRHF593130 300K Rads (Si)
RDS(on)
ID
0.24Ω -6.7A
0.24Ω -6.7A
TO-39
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC=25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-6.7
-4.3
-26.8
25
0.2
±20
240
-6.7
2.5
-17
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in./1.6 mm from case for 10s)
0.98 (Typical )
g
For footnotes refer to the last page
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1
09/26/05
IRHF597130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
4.3
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
Test Conditions
—
—
V
VGS = 0V, ID = -1.0mA
-0.13
—
V/°C
Reference to 25°C, ID = -1.0mA
—
0.24
Ω
—
—
—
—
-4.0
—
-10
-25
V
S( )
—
—
—
—
—
—
—
—
—
7.0
-100
100
40
16
11
25
50
45
125
—
Ω
BVDSS
µA
nA
nC
ns
VGS = -12V, ID = -4.3A Ã
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -4.3A Ã
VDS = -80V ,VGS = 0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -6.7A
VDS = -50V
VDD = -50V, ID = -6.7A
VGS =-12V, RG = 7.5Ω
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1250
318
28
8.0
—
—
—
—
pF
Ω
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-6.7
-26.8
-5.0
150
408
Test Conditions
A
V
ns
nC
T j = 25°C, IS = -6.7A, VGS = 0V Ã
Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
5.0
175
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHF597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance(TO-39)
Diode Forward Voltage Ã
Units
Test Conditions
100K Rads(Si)1
Min Max
300KRads(Si)2
Min
Max
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.205
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.205
nA
µA
Ω
VGS = 0V, ID = -1.0mA
V GS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -80V, VGS =0V
VGS = -12V, ID = -4.3A
—
0.24
—
0.24
Ω
VGS = -12V, ID = -4.3A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -6.7A
V
1. Part number IRHF597130
2. Part number IRHF593130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
37.9
59.7
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V
33.1
-100
-100
-100
-100
-100
-100
30.5
-100
-100
-100
-100
-75
-25
28.4
-100
-100
-100
-30
—
—
Energy
(MeV)
252.6
314
350
-120
-100
VDS
-80
-60
Br
-40
I
Au
-20
0
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF597130
Pre-Irradiation
100
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
-5.0V
1
60µs PULSE WIDTH
Tj = 25°C
0.1
10
1
60µs PULSE WIDTH
Tj = 150°C
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
T J = 25°C
T J = 150°C
10
VDS = -25V
15 WIDTH
60µs PULSE
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
-5.0V
0.1
0.1
ID = -6.7A
2.0
1.5
1.0
VGS = -12V
0.5
5
6
7
8
9
10
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2000
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
1200
Coss
800
400
Crss
0
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
5
-VDS, Drain-to-Source Voltage (V)
-ID, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
100
TJ = 150°C
T J = 25°C
1
3
4
5
6
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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25
30
35
40
7
100µs
1ms
1
0.1
0.1
2
20
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
VGS = 0V
1
15
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0
10
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
VDS= -80V
VDS= -50V
VDS= -20V
ID = -6.7A
-VGS, Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
IRHF597130
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF597130
Pre-Irradiation
7
V GS
6
D.U.T.
RG
5
-I D, Drain Current (A)
RD
V DS
-
+
V DD
V GS
4
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3
Fig 10a. Switching Time Test Circuit
2
td(on)
1
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PDM
0.02
0.1
0.01
0.00001
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF597130
L
600
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-3.0A
-4.2A
BOTTOM -6.7A
TOP
500
400
300
200
100
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF597130
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L =10.6mH
Peak IL = -6.7A, VGS = -12V
 ISD ≤ -6.7A, di/dt ≤ -530A/µs,
VDD ≤ -100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
8
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