Fairchild FJN4306R Pnp epitaxial silicon transistor Datasheet

FJN4306R
FJN4306R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=47KΩ)
• Complement to FJN3306R
TO-92
1
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
-50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-10
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Equivalent Circuit
C
R1
B
R2
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-50
BVCEO
Collector-Emitter Breakdown Voltage
IC= -100µA, IB=0
-50
ICBO
Collector Cut-off Current
VCB= -40V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
Cob
Output Capacitance
VCB= -10V, IE=0
f=1.0MHz
Max.
Units
V
-0.1
µA
V
68
-0.3
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -5mA
VI(off)
Input Off Voltage
VCE= -5V, IC= -100µA
VI(on)
Input On Voltage
VCE= -0.3V, IC= -1mA
R1
Input Resistor
7
R1/R2
Resistor Ratio
0.19
©2002 Fairchild Semiconductor Corporation
Typ.
V
5.5
pF
200
MHz
-0.3
V
-1.4
V
10
13
KΩ
0.21
0.24
Rev. A, July 2002
FJN4306R
Typical Characteristics
-100
1000
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = - 5V
R1 = 10K
R2 = 47K
100
10
1
-0.1
-1
-10
-1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
400
VCE = - 5V
R1 = 10K
R2 = 47K
350
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
-10
-0.1
-0.1
-100
-10k
-1k
-100
-10
-1
-0.1
VCE =- 0.3V
R1 = 10K
R2 = 47K
300
250
200
150
100
50
0
-0.3
-0.5
-0.7
-0.9
-1.1
-1.3
-1.5
-1.7
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
-1.9
-2.1
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A, July 2002
FJN4306R
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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Rev. I1
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