MBRA1H100T3G, NRVBA1H100T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 100 VOLTS Features Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Low Forward Voltage Drop Guardring for Stress Protection AEC−Q101 Qualified and PPAP Capable NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb−Free Device* SMA CASE 403D PLASTIC 1 Cathode MARKING DIAGRAMS A110 AYWWG Mechanical Characteristics: Case: Epoxy, Molded Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Lead Indicated by Polarity Band ESD Ratings: Machine Model = C Human Body Model = 3B Device Meets MSL 1 Requirements 2 Anode A110 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRA1H100T3G SMA (Pb−Free) 5,000 / Tape & Reel ** NRVBA1H100T3G SMA (Pb−Free) 5,000 / Tape & Reel ** Device ** 12 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 2 1 Publication Order Number: MBRA1H100/D MBRA1H100T3G, NRVBA1H100T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 167C) Symbol Value Unit VRRM VRWM VR 100 V IO Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) IFSM Tstg, TJ 1.0 50 −65 to +175 A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 14 C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 75 C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 280 C/W Symbol Value Unit mm2 in2) 2. Mounted with 700 copper pad size (Approximately 1 1 oz FR4 Board. 3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25C) (IF = 2.0 A, TJ = 25C) (IF = 1.0 A, TJ = 125C) (IF = 2.0 A, TJ = 125C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) IR 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. http://onsemi.com 2 0.76 0.84 0.61 0.68 40 0.5 V mA mA MBRA1H100T3G, NRVBA1H100T3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150C 125C 25C 10 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 IR, REVERSE CURRENT (mA) 10 150C 1 0.1 125C 0.01 0.001 0.0001 25C 0 10 20 30 40 50 60 125C 0.01 25C 0.001 70 80 90 100 0.00001 0 10 20 30 40 50 60 70 90 100 80 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current RqJL = 14C/W dc 1.5 Square Wave 1.0 0.5 140 0.1 0.0001 2.0 0 135 150C 1 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) IF(AV), AVERAGE FORWARD CURRENT (A) 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 0.00001 10 0.1 1.4 25C 150C 125C 1.0 TJ = 175C Square Wave 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBRA1H100T3G, NRVBA1H100T3G TYPICAL CHARACTERISTICS 140 TJ = 25C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad) 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 MBRA1H100T3G, NRVBA1H100T3G PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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