ON MMJT9435T3 Bipolar power transistors pnp silicon Datasheet

MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
• Collector −Emitter Sustaining Voltage −
•
•
•
•
•
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POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain −
= 125 (Min) @ IC = 0.8 Adc
hFE
= 90 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
9435
A
WW
AWW
9435
= Specific Device Code
= Assembly Location
= Work Week
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 5
1
Publication Order Number:
MMJT9435/D
MMJT9435
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
30
Vdc
Collector−Base Voltage
VCB
45
Vdc
Emitter−Base Voltage
VEB
6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
Collector Current − Peak
IC
3.0
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
PD
3.0
24
1.56
0.72
W
mW/°C
W
TJ, Tstg
– 55 to + 150
°C
Collector−Emitter Voltage
Operating and Storage Junction Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Symbol
Max
Unit
RJC
RJA
RJA
42
80
174
°C/W
TL
260
°C
ORDERING INFORMATION
Package
Shipping†
MMJT9435T1
SOT−223
1000 / Tape & Reel
MMJT9435T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
MMJT9435T3
SOT−223
4000 / Tape & Reel
MMJT9435T3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MMJT9435
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
−
−
6.0
−
−
−
−
−
−
20
200
−
−
10
−
−
−
0.155
−
−
0.210
0.275
0.550
−
−
1.25
−
−
1.10
125
110
90
220
−
−
−
−
−
−
100
150
−
135
−
−
110
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
Emitter−Base Voltage
(IE = 50 Adc, IC = 0 Adc)
VEBO
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 )
(VCE = 25 Vdc, RBE = 200 , TJ = 125°C)
ICER
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
Vdc
Vdc
Adc
Adc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
Base−Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc)
Cib
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
pF
pF
MHz
1.0
VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V)
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. fT = |hFE| • ftest
0.75
IC = 3.0 A
0.50
1.2 A
0.8 A
0.25
0.5 A
0
0.25 A
1.0
10
100
1000
0.25
0.20
1.2 A
0.15
0.8 A
0.10
0.5 A
0.05
IC = 0.25 A
0
1.0
10
100
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
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3
1000
MMJT9435
1000
1000
150°C
HFE, DC CURRENT GAIN
HFE, DC CURRENT GAIN
150°C
25°C
100
−55°C
25°C
100
−55°C
VCE = 1.0 V
VCE = 4.0 V
10
10
0.1
1.0
0.1
10
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. DC Current Gain
1.0
10
IC/IB = 10
VBE(sat)
1.0
V, VOLTAGE (V)
V, VOLTAGE (V)
1.0
VBE(sat)
0.1
0.1
VCE(sat)
VCE(sat)
IC/IB = 50
0.01
0.01
1.0
0.1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “On” Voltages
Figure 6. “On” Voltages
1.2
1000
CAPACITANCE (pF)
−55°C
V, VOLTAGE (V)
1.0
0.1
10
0.8
25°C
150°C
0.4
Cob
100
VCE = 4.0 V
0
10
0.1
1.0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. VBE(on) Voltage
Figure 8. Output Capacitance
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4
100
MMJT9435
10
f t , CURRENT−GAIN BANDWIDTH PRODUCT
1000
IC , COLLECTOR CURRENT (AMPS)
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
100
100 ms
0.1
0.01
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.001
10
0.1
1.0
0.1
10
1.0
10
100
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 9. Current−Gain Bandwidth Product
Figure 10. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
4.0
PD , POWER DISSIPATION (WATTS)
0.5 ms
5.0 ms
1.0
3.0
TC
2.0
1.0
TA
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 11. Power Derating
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
RJA(t) = r(t) JA
JA = 174°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) JA(t)
SINGLE PULSE
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.0001
0.0001
0.001
0.01
1.0
0.1
t, TIME (seconds)
Figure 12. Thermal Response
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5
10
100
1000
MMJT9435
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
F
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
4
S
1
2
B
3
D
L
G
J
C
0.08 (0003)
STYLE 1:
PIN 1.
2.
3.
4.
M
H
K
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMJT9435/D
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