Powerex Power CM300DC-24NFM Dual igbt nfm-series module300 amperes/1200 volt Datasheet

CM300DC-24NFM
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual IGBT
NFM-Series Module
300 Amperes/1200 Volts
F
A
F
X
Y
Y
Y
Z
G
G2
B E N W
J
K
C2E1
AA
L
(4 PLACES)
E2
C1
AB
AA
P
D
T
Q
Z
E2
Z
E1
H
G
G1
Z
M
(3 PLACES)
V - TAB
(4 PLACES)
Description:
Powerex NFM IGBT Modules
are designed for use in hard
switching (15-30kHz) applications. Each module consists of two
IGBT Transistors in a half-bridge
configuration with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management
Q
S
C U
R
C1
G1
E1
C2E1
G2
E2
E2
Outline Drawing and Circuit Diagram
Dim.
Inches
Dim.
Inches
Millimeters
A
4.25
108.0
P
3.15
80.0
2.44
62.0
Q
0.11
3.0
R
0.91
23.2
B
C
Millimeters
1.19+0.04/-0.02 30.4+1.0/-0.5
D
3.66±0.01
93.0±0.25
S
0.31
8.0
E
1.89±0.01
48.0±0.25
T
1.93
49.0
0.14
F
1.10
28.0
U
G
0.23
6.0
V
3.5
H
0.67
17.0
W
1.18
30.0
J
0.79
20.0
X
0.62
18.5
#110 Tab
K
0.39
10.0
Y
0.47
12.0
L
0.26 Dia.
6.5 Dia.
Z
0.02
0.5
M
M6
M6
AA
0.88
22.5
N
1.38
35.0
AB
0.98
25.0
02/07
Features:
£ Low Drive Power
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ UPS
£ Battery Powered Supplies
£ Induction Heating
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM300DC-24NFM is a 1200V
(VCES), 300 Ampere Dual
IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
300
24
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DC-24NFM
Dual IGBT NFM-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM300DC-24NFM
Units
Tj
–40 to 150
°C
Junction Temperature
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
300
Amperes
ICM
600*
Amperes
IE
300
Amperes
Collector Current
Peak Collector Current
Emitter Current**
Peak Emitter Current**
IEM
600*
Amperes
Maximum Collector Dissipation*** (TC = 25°C)****
PC
1890
Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
—
375
Grams
VISO
2500
Volts
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 30mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage*****
VCE(sat)
IC = 300A, VGE = 15V, Tj = 25°C
—
3.0
4.5
Volts
IC = 300A, VGE = 15V, Tj = 125°C
—
3.0
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 300A, VGE = 15V
—
1360
—
nC
Emitter-Collector Voltage**
VEC
IE = 300A, VGE = 0V
—
2.3
3.3
Volts
Min.
Typ.
Max.
Units
47
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
—
—
Output Capacitance
Coes
—
—
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
—
—
Inductive
Turn-on Delay Time
td(on)
—
—
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
nF
4.0
nF
0.9
nF
300
ns
tr
VCC = 600V, IC = 300A,
—
—
80
ns
td(off)
VGE1 = VGE2 = 15V, RG = 1.0Ω,
—
—
500
ns
tf
Inductive Load
—
60
200
ns
Diode Reverse Recovery Time**
trr
Switching Operation,
—
110
180
ns
Diode Reverse Recovery Charge**
Qrr
IE = 300A
—
14
—
µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***Junction temperature (Tj) should not increase beyond 150°C.
****TC , Tf measured point is just under the chips.
*****Pulse width and repetition rate should be such as to cause neglible temperature rise.
02/07
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DC-24NFM
Dual IGBT NFM-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)Q
Per IGBT 1/2 Module,
—
—
0.066
°C/W
—
—
0.14
°C/W
—
0.02
—
°C/W
1.0
—
10
Ω
Thermal Resistance, Junction to Case
TC Measured Point Just Under Chips*
Rth(j-c)D
Per FWDi 1/2 Module,
Contact Thermal Resistance,
TC Measured Point Just Under Chips*
Rth(c-f)
Per 1/2 Module, Thermal Grease Applied
Case to Fin
External Gate Resistance
RG
*If using this value, Rth(f-a) should be measured just under the chips.
500
12
400
300
10
200
9
100
8
0
2
4
6
8
3
2
1
0
100
200
300
400
500
8
IC = 600A
IC = 300A
6
IC = 120A
4
2
0
600
Tj = 25°C
6
8
10
12
14
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE, Cies, Coes, Cres, (nF)
101
Cies
td(off)
td(on)
101
Coes
100
Cres
102
tf
tr
101
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
VGE = 0V
1
2
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
02/07
3
20
103
102
102
0
18
COLLECTOR-CURRENT, IC, (AMPERES)
VGE = 0V
Tj = 25°C
Tj = 125°C
100
16
COLLECTOR CURRENT, IC, (AMPERES)
103
EMITTER CURRENT, IE, (AMPERES)
4
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
SWITCHING TIME, (ns)
0
10
5
Tj = 25°C
15
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
600
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DC-24NFM
Dual IGBT NFM-Series Module
300 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
101
101
101
103
102
5
0
800
1200
1600
100
101
2000
102
103
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
Eon
Eoff
101
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
SWITCHING LOSS, Err, (mJ/PULSE)
102
10-3
400
0
101
REVERSE RECOVERY SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING LOSS, Err, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
10
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
101
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
GATE RESISTANCE, RG, (Ω)
10-3
VCC = 600V
COLLECTOR CURRENT, IC, (AMPERES)
100
100
10-2
VCC = 400V
15
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
GATE CHARGE, QG, (nC)
101
10-1
IC = 300A
EMITTER CURRENT, IE, (AMPERES)
102
100
102
SWITCHING LOSS, E(on), E(off), (mJ/PULSE)
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Irr
trr
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE CHARGE VS. VGE
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
103
103
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
101
100
100
101
102
GATE RESISTANCE, RG, (Ω)
101
10-1
Single Pulse
TC = 25°C
Under the Chip
Per Unit Base =
Rth(j-c) =
0.066°C/W
(IGBT)
Rth(j-c) =
0.14°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
02/07
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